Results 101 to 110 of about 6,152 (186)

Advanced photovoltaic power systems using tandem GaAs/GaSb concentrator modules [PDF]

In 1989, Boeing announced the fabrication of a tandem gallium concentrator solar cell with an energy conversion efficiency of 30 percent. This research breakthrough has now led to panels which are significantly smaller, lighter, more radiation resistant,
Avery, J. E., Ballantyne, R., Dihn, V., Fraas, L. M., Gruenbaum, P. E., Kuryla, M. S., Pietila, D. A., Samuel, C., Sundaram, V. S.   +8 more
core   +1 more source

Interband cascade lasers grown simultaneously on GaSb, GaAs and Si substrates

Optics Express
We report on Sb-based interband cascade lasers simultaneously grown on GaSb, GaAs and Si substrates. 8 µm x 2 mm devices exhibited similar threshold currents around 40 mA at 20°C and achieved continuous-wave (CW) operation up to 65°C on GaSb, GaAs and Si substrates despite a dislocation density of ∼ 4.108 cm-2 for both mismatched substrates.
Maeva Fagot, Daniel A. Díaz-Thomas, Audrey Gilbert, Gad Kombila, Michel Ramonda, Yves Rouillard, Alexei N. Baranov, Jean-Baptiste Rodriguez, Eric Tournié, Laurent Cerutti   +9 more
openaire   +2 more sources

An Amorphous Native Oxide Shell for High Bias-Stress Stability Nanowire Synaptic Transistor. [PDF]

Adv Sci (Weinh), 2023
Zhuang X, Sa Z, Zhang J, Wang M, Xu M, Liu F, Song K, He T, Chen F, Yang ZX.   +9 more
europepmc   +1 more source

Lattice-mismatch-free construction of III-V/chalcogenide core-shell heterostructure nanowires. [PDF]

Nat Commun, 2023
Liu F, Zhuang X, Wang M, Qi D, Dong S, Yip S, Yin Y, Zhang J, Sa Z, Song K, He L, Tan Y, Meng Y, Ho JC, Liao L, Chen F, Yang ZX.   +16 more
europepmc   +1 more source

Structural Properties and Energy Spectrum of Novel GaSb/AlP Self-Assembled Quantum Dots. [PDF]

Nanomaterials (Basel), 2023
Abramkin DS, Petrushkov MO, Bogomolov DB, Emelyanov EA, Yesin MY, Vasev AV, Bloshkin AA, Koptev ES, Putyato MA, Atuchin VV, Preobrazhenskii VV.   +10 more
europepmc   +1 more source

Impact of drain and source engineering on dual metal InAs-GaSb VTFETs with high-K gate stack design. [PDF]

Sci Rep
Saravanan M, Parthasarathy E, Rahi SB, Natarajan R.   +3 more
europepmc   +1 more source

Diameter Control of GaSb Nanowires Revealed by In Situ Environmental Transmission Electron Microscopy. [PDF]

J Phys Chem Lett, 2023
Marnauza M, Sjökvist R, Lehmann S, Dick KA.   +3 more
europepmc   +1 more source

MBE Growth of High-Quality HgCdSe for Infrared Detector Applications. [PDF]

Materials (Basel)
Zhang Z, Pan W, Umana Membreno GA, Ma S, Faraone L, Lei W.   +5 more
europepmc   +1 more source

Heterogeneous integration of GaSb photodetector on silicon-on insulator waveguide circuits for shortwave-infrared sensing applications [PDF]

, 2010
Cerrutti, L, Hattasan, Nannicha, Rodriguez, JB, Roelkens, Günther, Tournié, E, Van Thourhout, Dries   +5 more
core  

Pinhole-seeded lateral epitaxy and exfoliation of GaSb films on graphene-terminated surfaces. [PDF]

Nat Commun, 2022
Manzo S, Strohbeen PJ, Lim ZH, Saraswat V, Du D, Xu S, Pokharel N, Mawst LJ, Arnold MS, Kawasaki JK.   +9 more
europepmc   +1 more source