Results 101 to 110 of about 2,109,434 (243)

Independently Accessible Dual-Band Barrier Infrared Detector Using Type-II Superlattices

Photonics
We report a novel dual-band barrier infrared detector (DBIRD) design using InAs/GaSb type-II superlattices (T2SLs). The DBIRD structure consists of back-to-back barrier diodes: a “blue channel” (BC) diode which has an nBp architecture, an n-type layer of
Seung-man Park, Christoph H. Grein
doaj   +1 more source

Laser materials for the 0.67-microns to 2.5-microns range [PDF]

Basic requirements for obtaining injection laser action in III-V semiconductors are discussed briefly. A detailed review is presented of materials suitable for lasers emitting at 0.67, 1.44, 1.93, and 2.5 microns.
Ladany, Ivan, Martinelli, Ramon U., Toda, Minoru, Zamerowski, Thomas J.   +3 more
core   +1 more source

Perfection of materials technology for producing improved Gunn-effect devices [PDF]

Chemical vapor deposition system for improved Gunn effect devices using arsenic chloride 3 ...
Baxter, R. D., Beer, A. C., Bennett, J. E., Miller, J. F., Moody, J. W.   +4 more
core   +1 more source

Interband cascade lasers grown simultaneously on GaSb, GaAs and Si substrates

Optics Express
We report on Sb-based interband cascade lasers simultaneously grown on GaSb, GaAs and Si substrates. 8 µm x 2 mm devices exhibited similar threshold currents around 40 mA at 20°C and achieved continuous-wave (CW) operation up to 65°C on GaSb, GaAs and Si substrates despite a dislocation density of ∼ 4.108 cm-2 for both mismatched substrates.
Maeva Fagot, Daniel A. Díaz-Thomas, Audrey Gilbert, Gad Kombila, Michel Ramonda, Yves Rouillard, Alexei N. Baranov, Jean-Baptiste Rodriguez, Eric Tournié, Laurent Cerutti   +9 more
openaire   +2 more sources

Improved surface and structural properties of InAs∕GaSb superlattices on (001) GaSb substrate by introducing an InAsSb layer at interfaces

, 2007
Xiaohong Zhang, J. Ryou, R. Dupuis, C. Xu, S. Mou, A. Petschke, K. Hsieh, S. Chuang   +7 more
semanticscholar   +1 more source

Ga1-xMnxSb grown on GaSb substrate by liquid phase epitaxy

, 2004
Chenlong Chen, N. Chen, Lifeng Liu, Yan-Li Li, Jinliang Wu   +4 more
semanticscholar   +1 more source

Induced fit growth of Ga-based semiconductor thin films for brain-inspired electronics and optoelectronics. [PDF]

Light Sci Appl
Sa Z, Song K, Meng Y, Wu W, Wang Z, Li P, Zhang J, Zang Z, Wang G, Wang M, Jia Z, Tan Y, Li W, Yip S, Chen F, Ho JC, Yang ZX.   +16 more
europepmc   +1 more source

An Amorphous Native Oxide Shell for High Bias-Stress Stability Nanowire Synaptic Transistor. [PDF]

Adv Sci (Weinh), 2023
Zhuang X, Sa Z, Zhang J, Wang M, Xu M, Liu F, Song K, He T, Chen F, Yang ZX.   +9 more
europepmc   +1 more source

Controlled Growth of Rare-Earth-Doped TiO₂ Thin Films on III-V Semiconductors for Hybrid Quantum Photonic Interfaces. [PDF]

ACS Appl Opt Mater
Hammer HC, Whittier C, Helvy NA, Rouleau C, Bassim ND, Uppu R.   +5 more
europepmc   +1 more source

Impact of drain and source engineering on dual metal InAs-GaSb VTFETs with high-K gate stack design. [PDF]

Sci Rep
Saravanan M, Parthasarathy E, Rahi SB, Natarajan R.   +3 more
europepmc   +1 more source