Results 21 to 30 of about 6,152 (186)

Band gap reduction in GaNSb alloys due to the anion mismatch [PDF]

, 2005
The structural and optoelectronic properties in GaNxSb1–x alloys ...
Ashley, T., Bennett, B. R., Buckle, L., Jefferson, Paul Harvey, Jollands, Stuart, McConville, C. F. (Chris F.), Murdin, B. N., Piper, L. F. J., Smith, G. W., Thomas, Pam A., Veal, T. D. (Tim D.)   +10 more
core   +2 more sources

InAs/GaSb Superlattice Based Mid-Infrared Interband Cascade Photodetectors Grown on Both Native GaSb and Lattice-Mismatched GaAs Substrates

Proceedings, 2019
Electrical and optical properties of interband cascade infrared photodetectors with InAs/GaSb type-II superlattice absorbers are investigated in this work.
Klaudia Hackiewicz, Małgorzata Kopytko, Jarosław Rutkowski, Piotr Martyniuk, Łukasz Ciura   +4 more
doaj   +1 more source

Type II superlattices for infrared detectors and devices [PDF]

, 1991
Superlattices consisting of combinations of III-V semiconductors with type II band alignments are of interest for infrared applications because their energy gaps can be made smaller than those of any 'natural' III-V compounds.
Chow, D. H., Collins, D. A., McGill, T. C., Miles, R. H., Schulman, J. N.   +4 more
core   +1 more source

Interband Cascade Photonic Integrated Circuits on Native III-V Chip

Sensors, 2021
We describe how a midwave infrared photonic integrated circuit (PIC) that combines lasers, detectors, passive waveguides, and other optical elements may be constructed on the native GaSb substrate of an interband cascade laser (ICL) structure. The active
Jerry R. Meyer, Chul Soo Kim, Mijin Kim, Chadwick L. Canedy, Charles D. Merritt, William W. Bewley, Igor Vurgaftman   +6 more
doaj   +1 more source

Electrical Properties of Midwave and Longwave InAs/GaSb Superlattices Grown on GaAs Substrates by Molecular Beam Epitaxy

Nanoscale Research Letters, 2018
In the present work, we report on the in-plane electrical transport properties of midwave (MWIR) and longwave infrared (LWIR) InAs/GaSb type-II superlattices (T2SLs) grown by molecular beam epitaxy (MBE) system on GaAs (001) substrate.
D. Benyahia, Ł. Kubiszyn, K. Michalczewski, J. Boguski, A. Kębłowski, P. Martyniuk, J. Piotrowski, A. Rogalski   +7 more
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Effect of substrate orientation on band structure of bulk III-V semiconductors

AIP Advances, 2022
We present a detailed theory of the effects of crystal orientation on the properties of semiconductors. Our formalism allows us to study arbitrary crystallographic orientations of various compound semiconductors within any band model and crystal symmetry.
Marta Gladysiewicz, M. S. Wartak
doaj   +1 more source

Demonstration of HOT photoresponse of MWIR T2SLs InAs/InAsSb photoresistors [PDF]

Bulletin of the Polish Academy of Sciences: Technical Sciences, 2019
We report on the photoresponse of mid-wavelength infrared radiation (MWIR) type-II superlattices (T2SLs) InAs/InAsSb high operating temperature (HOT) photoresistor grown on GaAs substrate.
K. Michalczewski, T.Y. Tsai, P. Martyniuk, C.H. Wu   +3 more
doaj   +1 more source

Ballistic electron emission microscopy spectroscopy study of AlSb and InAs/AlSb superlattice barriers [PDF]

, 1998
Due to its large band gap, AlSb is often used as a barrier in antimonide heterostructure devices. However, its transport characteristics are not totally clear. We have employed ballistic electron emission microscopy (BEEM) to directly probe AlSb barriers
Cheng, X.-C., McGill, T. C.
core   +1 more source

Compositional analysis of InAs-GaAs-GaSb heterostructures by low-loss electron energy loss spectroscopy [PDF]

, 2013
As an alternative to Core-Loss Electron Energy Loss Spectroscopy, Low-Loss EELS is suitable for compositional analysis of complex heterostructures, such as the InAs-GaAs-GaSb system, since in this energy range the edges corresponding to these elements ...
A G Taboada, A M Beltrán, A M Sánchez, Egerton R F, J M Ripalda, M H Gass, S I Molina, Sánchez A M, T Ben   +8 more
core   +2 more sources

Preepitaxial substrate treatment of GaSb for liquid phase technology homoepitaxial growth [PDF]

Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2008
The results of investigation to find out the optimal conditions of preepitaxial GaSb substrate treatment by chemical etching in inorganic acid mixes are offered.
Andronova О. V., Kurak V. V.
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