Results 21 to 30 of about 2,109,434 (243)

Study of interface asymmetry in InAs–GaSb heterojunctions [PDF]

, 1995
We present reflection high energy electron diffraction, secondary ion mass spectroscopy, scanning tunneling microscopy and x‐ray photoelectron spectroscopy studies of the abruptness of InAs–GaSb interfaces.
Collins, D. A., Feenstra, R. M., Grant, R. W., McGill, T. C., Wang, M. W.   +4 more
core   +1 more source

Lateral Epitaxial Overgrowth of GaSb on GaAs and GaSb Substrates

Microscopy and Microanalysis, 2000
Abstract Lateral epitaxial overgrowth (LEO) technique has recently been used to improve the quality of semiconductor layers grown on a substrate. Previous studies with GaN grown on sapphire showed a significant reduction in dislocation density in LEO layers.
C K Inoki, D L Harris, T S Kuan, S S Yi, D M Hansen, T F Kuech   +5 more
openaire   +1 more source

Study on Raman spectroscopy of InSb nano-stripes grown on GaSb substrate by molecular beam epitaxy and their Raman peak shift with magnetic field

Journal of Crystal Growth, 2019
We report on the Raman spectroscopy of self-assembled InSb nano-stripes grown on (0 0 1) GaSb substrate by molecular beam epitaxy. The nano-stripes have a truncated pyramidal shape with the typical dimension of ∼150 × 200 × 25 nm3.
P. Lekwongderm, R. Chumkaew, S. Thainoi, S. Kiravittaya, A. Tandaechanurat, N. Nuntawong, S. Sopitpan, V. Yordsri, C. Thanachayanont, S. Kanjanachuchai, S. Ratanathammaphan, S. Panyakeow   +11 more
semanticscholar   +1 more source

InAs/GaSb Superlattice Based Mid-Infrared Interband Cascade Photodetectors Grown on Both Native GaSb and Lattice-Mismatched GaAs Substrates

Proceedings, 2019
Electrical and optical properties of interband cascade infrared photodetectors with InAs/GaSb type-II superlattice absorbers are investigated in this work.
Klaudia Hackiewicz, Małgorzata Kopytko, Jarosław Rutkowski, Piotr Martyniuk, Łukasz Ciura   +4 more
doaj   +1 more source

Interband Cascade Photonic Integrated Circuits on Native III-V Chip

Sensors, 2021
We describe how a midwave infrared photonic integrated circuit (PIC) that combines lasers, detectors, passive waveguides, and other optical elements may be constructed on the native GaSb substrate of an interband cascade laser (ICL) structure. The active
Jerry R. Meyer, Chul Soo Kim, Mijin Kim, Chadwick L. Canedy, Charles D. Merritt, William W. Bewley, Igor Vurgaftman   +6 more
doaj   +1 more source

Electrical Properties of Midwave and Longwave InAs/GaSb Superlattices Grown on GaAs Substrates by Molecular Beam Epitaxy

Nanoscale Research Letters, 2018
In the present work, we report on the in-plane electrical transport properties of midwave (MWIR) and longwave infrared (LWIR) InAs/GaSb type-II superlattices (T2SLs) grown by molecular beam epitaxy (MBE) system on GaAs (001) substrate.
D. Benyahia, Ł. Kubiszyn, K. Michalczewski, J. Boguski, A. Kębłowski, P. Martyniuk, J. Piotrowski, A. Rogalski   +7 more
doaj   +1 more source

Band gap reduction in GaNSb alloys due to the anion mismatch [PDF]

, 2005
The structural and optoelectronic properties in GaNxSb1–x alloys ...
Ashley, T., Bennett, B. R., Buckle, L., Jefferson, Paul Harvey, Jollands, Stuart, McConville, C. F. (Chris F.), Murdin, B. N., Piper, L. F. J., Smith, G. W., Thomas, Pam A., Veal, T. D. (Tim D.)   +10 more
core   +2 more sources

Demonstration of HOT photoresponse of MWIR T2SLs InAs/InAsSb photoresistors [PDF]

Bulletin of the Polish Academy of Sciences: Technical Sciences, 2019
We report on the photoresponse of mid-wavelength infrared radiation (MWIR) type-II superlattices (T2SLs) InAs/InAsSb high operating temperature (HOT) photoresistor grown on GaAs substrate.
K. Michalczewski, T.Y. Tsai, P. Martyniuk, C.H. Wu   +3 more
doaj   +1 more source

Monolithically integrated InAsSb-based nBnBn heterostructure on GaAs for infrared detection [PDF]

, 2018
High operating temperature i nfrared photo detectors with multi -color function that are capable of monolithic integration are of increasing importance in developing the next generation of mid -IR imag e ...
Craig, Adam P., Cumming, David R.S., Khalid, Ata, Marshall, Andrew, Pusino, Vincenzo, Xie, Chengzhi   +5 more
core   +1 more source

Effect of substrate orientation on band structure of bulk III-V semiconductors

AIP Advances, 2022
We present a detailed theory of the effects of crystal orientation on the properties of semiconductors. Our formalism allows us to study arbitrary crystallographic orientations of various compound semiconductors within any band model and crystal symmetry.
Marta Gladysiewicz, M. S. Wartak
doaj   +1 more source