Results 11 to 20 of about 12,271 (215)
A Quasi-Multilevel Gate Driver for Fast Switching and Crosstalk Suppression of SiC Devices
IEEE Access, 2020 The crosstalk phenomenon in a phase-leg configuration forbids the operation of SiC devices at high switching speed. A multilevel gate driver (MGD) is well-known for crosstalk mitigation, however, it requires two driver ICs and two voltage supplies to ...
Xuanlyu Wu +5 more
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IEEE Open Journal of Power Electronics, 2021 The voltage rating of commercial Gallium Nitride (GaN) power semiconductors is limited to 600/650 V because of the lateral structure. Stacking low-voltage switches is an effective way to block higher dc-link voltage.
Zhengda Zhang +5 more
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Capacitor Reused Gate Driver for Compact In-Cell Touch Displays
IEEE Journal of the Electron Devices Society, 2021 A thin-film transistor (TFT) integrated gate driver is proposed for compact in-cell touch display, where one capacitor is reused for both turning on low-level maintaining transistors via voltage coupling and maintaining the re-start charge during the ...
Shuai Shen +4 more
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Gate Driver Circuit Design, PWM signal generation using FEZ Panda III and Arduino for Inverter [PDF]
E3S Web of Conferences, 2019 This paper presents the gate driver circuit design and PWM signal generation using FEZ panda III and Arduino boards for Inverter. FEZ panda III works on .net micro framework and all its programming, debugging features are available through Microsoft’s ...
D Srinivasa Rao +3 more
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A novel gate driver for Si/SiC hybrid switch for multi‐objective optimization
IET Power Electronics, 2021 A novel gate driver with simple functional and structural integration is proposed here, which splits the input gate signal and outputs two separate signals with a dedicated delay time to drive the two constitutional switches, aiming at the cost ...
Zongjian Li +7 more
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Energies, 2021 Wide-bandgap technology evolution compels the advancement of efficient pulse-width gate-driver devices. Integrated enhanced gate-driver planar transformers are a source of electromagnetic disturbances due to inter-winding capacitances, which serve as a ...
Loreine Makki +4 more
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A four‐step control for IGBT switching improvement using an active voltage gate driver
IET Power Electronics, 2022 Gate drivers form an essential interface between the high power transistors and low voltage control circuits in power converters to govern the transistor switching operations and maintain other ancillary functions.
Chen Li +5 more
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Design and experiments of isolated gate driver using discrete devices for silicon carbide MOSFET
IET Power Electronics, 2023 The high temperature (HT) characteristics of silicon carbide (SiC) devices enable power electronic converters to operate at higher ambient temperature, and the importance of HT isolated gate drivers is becoming increasingly significant. Compared with the
Dong Jiang +6 more
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A Closed-Loop Active Gate Driver of SiC MOSFET for Voltage Spike Suppression
IEEE Open Journal of Power Electronics, 2022 The development trend of power converter is high frequency, high efficiency and high-power density. Compared with silicon-based power devices, SiC MOSFET has been widely used because of its fast-switching speed, low switching loss and high operating ...
Zongqiu Gao +4 more
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Energies, 2019 A SiC MOSFET is a suitable replacement for a Si MOSFET due to its lower on-state resistance, faster switching speed, and higher breakdown voltage. However, due to the parasitic parameters and the low damping in the circuit, the turn-on overcurrent and ...
Jiangui Chen, Yan Li, Mei Liang
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