Results 31 to 40 of about 12,271 (215)
Phosphoinositides and inositol phosphates as molecular glues
FEBS Letters, EarlyView.Inositol phosphates (IPs) and phosphoinositides (PIPs) regulate diverse eukaryotic processes. Beyond recruiting signaling proteins or acting as structural cofactors, recent studies suggest they mediate protein–protein interactions as natural molecular glues.
Aleshia Seaton‐Terry +9 more
wiley +1 more source
Switching Behavior of Cascode GaN Under Influence of Gate Driver
CSEE Journal of Power and Energy SystemsWith high-frequency, low power dissipation and high-efficiency characteristics, Gallium nitride (GaN) power devices are of significant benefit in designing high-speed motor drives, as they improve performance and reduce weight.
Bin Luo, Guangzhao Luo, Sihai Li
doaj +1 more source
A Cost-Effective DC Circuit Breaker With Series-Connected Power Devices Using a Single Gate Driver
IEEE Access, 2023 In this paper, a solid-state circuit breaker (SSCB) suitable for high-voltage DC systems is presented. A single gate driver is used to drive multiple series-connected power semiconductor devices, leading to a compact, reliable, and cost-effective design.
Rui Xie +6 more
doaj +1 more source
Molecular Oncology, EarlyView.Cytarabine is a key therapy for acute myeloid leukaemia (AML), but its efficacy is limited by the dNTPase SAMHD1, which hydrolyses its active metabolite. Screening nucleotide biosynthesis inhibitors revealed that IMPDH inhibitors selectively sensitise SAMHD1‐proficient AML cells to cytarabine.
Miriam Yagüe‐Capilla +9 more
wiley +1 more source
IEEE Journal of the Electron Devices Society, 2019 Large-size, organic light-emitting device (OLED) panels based on highly reliable gate driver circuits integrated using InGaZnO thin-film transistors (TFTs) were fabricated to achieve ultra-high image density (UHD).
Hong Jae Shin, Tae Whan Kim
doaj +1 more source
A Three-Level GaN Driver for High False Turn-ON Tolerance With Minimal Reverse Conduction Loss
IEEE Open Journal of Power Electronics, 2023 This paper presents a three-level gate driver for GaN HEMTs (Gallium Nitride High Electron Mobility Transistors) for high false turn-on tolerance and low reverse conduction loss during both dead time at turn-on and turn-off.
Takehiro Takahashi +4 more
doaj +1 more source
Interpreting the effects of DNA polymerase variants at the structural level
Molecular Oncology, EarlyView.Using MAVISp and molecular dynamics simulations, we analyzed over 60 000 missense variants in POLE and POLD1 from ClinVar, COSMIC, cBioPortal, and saturation mutagenesis. Identified mechanistic indicators, including stability, binding, and long‐range, enable structural interpretation, providing ACMG‐like evidence for possible reclassification of VUS ...
Matteo Arnaudi +7 more
wiley +1 more source
Prediction Method of Driving Strategy of High-Power IGBT Module Based on MEA-BP Neural Network
IEEE Access, 2020 An insulated gate bipolar transistor (IGBT) driver is crucial for improving the reliability of a power electronics system. This paper proposes a method for predicting the optimal driving strategy of high-power IGBT module based on backpropagation neural ...
Zhaoliang Meng +10 more
doaj +1 more source
Molecular Oncology, EarlyView.Radiotherapy (RT) response depends on the DNA repair capacity of tumor and host cells. We show that circulating tumor cell (CTC) counts and apoptosis rates before and after RT predict treatment response and outcome, which can be accessed via easily accessible liquid biopsy approaches. Created in BioRender. Wikman, H.
Yvonne Goy +10 more
wiley +1 more source
A New Gate Driver for IGBT Devices with Multi-protections
机车电传动, 2015 The process of IGBT switching was analyzed, and then a new gate driver with multi-protections was designed. The contractive researches between new gate driver and common gate driver and researches on module short circuit were also done.
XIE Shunmeng +5 more
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