Results 161 to 170 of about 972 (218)

On the performance of active RIS-enhanced NOMA systems with spectrum sharing mechanisms. [PDF]

PLoS One
Tran M, Bui Vu M, Nguyen SQ.
europepmc   +1 more source

NiO/TiO₂ p-n Heterojunction Induced by Radiolysis for Photocatalytic Hydrogen Evolution. [PDF]

Materials (Basel)
Méndez-Medrano AA, Yuan X, Dragoe D, Colbeau-Justin C, Rodríguez López JL, Remita H.   +5 more
europepmc   +1 more source

Celebration of 80 years of EPR. [PDF]

Appl Magn Reson
Salikhov KM, Eaton SS, Eaton GR.
europepmc   +1 more source

A gut sense for a microbial pattern regulates feeding. [PDF]

Nature
Liu WW, Reicher N, Alway E, Rupprecht LE, Weng P, Schaefgen C, Klein ME, Villalobos JA, Puerto-Hernandez C, Kiesling Altún YG, Carbajal A, Aguayo-Guerrero JA, Coss A, Sahasrabudhe A, Anikeeva P, de Araujo A, Bali A, de Lartigue G, Gil-Lievana E, Gutierrez R, Miao EA, Rawls JF, Kaelberer MM, Bohórquez DV.   +23 more
europepmc   +1 more source

Impact of Wind on Rainfall Measurements Obtained from the OTT Parsivel² Disdrometer. [PDF]

Sensors (Basel)
Chinchella E, Cauteruccio A, Lanza LG.
europepmc   +1 more source

Microwave field mapping for EPR-on-a-chip experiments. [PDF]

Sci Adv
Künstner S, McPeak JE, Chu A, Kern M, Wick M, Dinse KP, Anders J, Naydenov B, Lips K.   +8 more
europepmc   +1 more source

Some of the next articles are maybe not open access.

Related searches:

Current Valley in Gunn Diode Oscillators

IETE Journal of Research, 1988
The source current variation within the synchronizing range of a Gunn diode oscillator is investigated theoretically as well as experimentally. Also explained its variation when the synchronizing signal is contaminated with co-channel interfering tonnes. It is found that the theory is in corroboration with the experimental findings.
B Biswas
exaly   +2 more sources

An AlGaAs/GaAs‐based planar Gunn diode oscillator with a fundamental frequency operation of 120 GHz [PDF]

Microwave and Optical Technology Letters, 2014
This letter reports the highest fundamental oscillator operating frequency of 120 GHz for gallium arsenide (GaAs)-based Gunn diode. The letter describes the design, fabrication, and test of the aluminum gallium arsenide (AlGaAs)/(GaAs) planar Gunn diode ...
Mohamed Ismaeel Maricar, Ata Khalid, Chong Li   +2 more
exaly   +2 more sources

Extraction of second harmonic from an InP based planar Gunn diode using diamond resonator for milli-metric wave frequencies [PDF]

Solid-State Electronics, 2016
Planar Indium Gallium Arsenide (In0.57Ga0.47As) Gunn diode was fabricated on a semi-insulating indium phosphide substrate with on chip matching circuit to enable the extraction of second harmonic in millimeter and terahertz frequencies.
Mohamed Ismaeel Maricar, Ata Khalid, David R S Cumming   +2 more
exaly   +2 more sources

Multidomain gunn diodes

Microwave and Optical Technology Letters, 1990
AbstractA technique for obtaining multidomain operation of Gunn diodes is proposed. Device impedance is increased, leading to large potential increases in output power. The precision required of the doping profile has been estimated by simulation and appears to be within the capabilities of molecular beam epitaxy.
Jenngang Tsay, S. E. Schwarz, Shankar Raman, J. S. Smith   +3 more
openaire   +1 more source