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Power Combiners With Gunn Diode Oscillators
MTT-S International Microwave Symposium Digest, 1982Combiners were developed using two Gunn diodes in dielectric waveguide (image line) oscillator circuits. The optimum configuration consisted of each Gunn diode being imbedded in a separate rectangular dielectric cavity as a primary source of oscillation. The frequency of operation was near 10 GHz. The dielectric resonators were then radiatively coupled
J.J. Potoczniak +3 more
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1992
Detailed experimental and theoretical treatments of the Gunn diode, whose operation depends on the transferred electron, or Gunn-Hilsum effect, have been presented by many authors (see, e.g., Shaw et al., 1979). Most of these have centered on sample and device lengths greater than 10 μm.
Melvin P. Shaw +3 more
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Detailed experimental and theoretical treatments of the Gunn diode, whose operation depends on the transferred electron, or Gunn-Hilsum effect, have been presented by many authors (see, e.g., Shaw et al., 1979). Most of these have centered on sample and device lengths greater than 10 μm.
Melvin P. Shaw +3 more
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SPIE Proceedings, 1985
The development of InP Gunn devices has progressed to manufacturing status for several basic products. Designs and processes have been established for InP Gunn oscillator diodes operating at 56 GHz, 80 GHz, and 94 GHz. This work has concentrated on designs especially for high cw efficiency at medium power levels suitable for short and medium range ...
Berin Fank, James Crowley, Connie Hang
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The development of InP Gunn devices has progressed to manufacturing status for several basic products. Designs and processes have been established for InP Gunn oscillator diodes operating at 56 GHz, 80 GHz, and 94 GHz. This work has concentrated on designs especially for high cw efficiency at medium power levels suitable for short and medium range ...
Berin Fank, James Crowley, Connie Hang
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1993
IMPATT and Gunn diodes are quite different, since in IMPATT diodes the free carriers are generated within the active zone by impact ionization, while in Gunn diodes the mobile carriers are injected through the cathode contact. However, both of these devices rely on the carrier transit time in order to provide a negative terminal resistance which ...
P. A. Roland, A. Bert
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IMPATT and Gunn diodes are quite different, since in IMPATT diodes the free carriers are generated within the active zone by impact ionization, while in Gunn diodes the mobile carriers are injected through the cathode contact. However, both of these devices rely on the carrier transit time in order to provide a negative terminal resistance which ...
P. A. Roland, A. Bert
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Domain suppression in Gunn diodes
Proceedings of the IEEE, 1969Gunn domains ware suppressed in Gunn diodes by side loading them with dielectrics of high permittivity or making them very thin. Results obtained on an experimental model suggest that electric lines of force leak out of the diodes.
I. Kuru, Y. Tajima
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1976 International Electron Devices Meeting, 1976
High power GaAs gunn diodes, which were made from wafers grown by Ga-AsCl 3 -N 2 vapor phase epitaxy, have been developed in the millimeter wave region. It was clear by the computer simulations and the experiments that the output power of gunn diodes at a frequency above 55GHz has been improved by using gradual substrate interface wafers.
T. Hisatsugu +5 more
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High power GaAs gunn diodes, which were made from wafers grown by Ga-AsCl 3 -N 2 vapor phase epitaxy, have been developed in the millimeter wave region. It was clear by the computer simulations and the experiments that the output power of gunn diodes at a frequency above 55GHz has been improved by using gradual substrate interface wafers.
T. Hisatsugu +5 more
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Reliability Studies of Gunn Diodes
12th International Reliability Physics Symposium, 1974Gallium Arsenide Gunn diodes have been investigated for long-term reliability prediction and verification of failure mechanisms. Data are presented concerning burn-out distribution in time, change in DC and RF parameters after DC high temperature burn-in, and step-stress testing.
T.B. Ramachandran +2 more
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Advances in Gunn Diode Technology
IETE Technical Review, 1997A Gunn diode is a simple two terminal source of low-noise, high frequency microwave power. It is most commonly used as local oscillator in critical microwave and mm-wave systems. The system requirement of frequency agility and temperature stability impose stringent demands on the device performance and hence on its material and fabrication technology ...
Ishwar Chandra, R Gulati, H S Sharma
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The Gunn-diode: fundamentals and fabrication
Proceedings of the 1998 South African Symposium on Communications and Signal Processing-COMSIG '98 (Cat. No. 98EX214), 2002A short tutorial on the Gunn diode is presented. The principles underlying Gunn oscillations are discussed briefly and illustrated by relevant simulations. The simulation of a typical Gunn diode in a cavity is also presented. In conclusion, the fabrication process of low-power Gunn diodes is discussed.
R. Van Zyl, W. Perold, R. Botha
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Transient processes in gunn diodes
Solid-State Electronics, 1975Abstract The influence of transient processes on the parameters of Gunn logic devices and Gunn generators is considered. For Gunn logic devices the dependence of the switching time on the load resistance R1 is calculated and the criteria limiting the possible values of R 1 R 0 (where R0 is the low field resistance of the Gunn diode ...
Michael E. Levinstein, Michael S. Shur
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