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V-Band InP Gunn Diode

1982 IEEE MTT-S International Microwave Symposium Digest, 1982
The n/sup +/-n-n/sup +/ InP wafers are continually grown by VPE. An integral heat sink process is utilized to fabricate CW InP Gunn diodes with multiple-layer n/sup +/-n-n/sup +/, which operate in V-band. The rf performance of the diode is determined using a coaxial waveguide cavity.
D.Y.Z. Hongzhi, S. Youngxi, F. Jingzhi
openaire   +1 more source

Noise in Microwave Transmission Applications of Gunn and IMPATT Diodes -- IMPATT and Gunn Diode Noise Diagnostics

MTT-S International Microwave Symposium Digest, 2005
In a communications system, the noise performance answer of most significance is the signal to noise ratio at the baseband output from a receiver. This is reflected in the form of the noise specification for components used in communications service.
openaire   +1 more source

Impedance diagram of the Gunn diode

Proceedings of the IEEE, 1966
Y. Suematsu, Y. Nishimura
openaire   +1 more source

Graded-gap AlInN Gunn diodes

2017
The paper deals with the numerical simulation of Gunn diodes operation based on the graded-gap AlInN. We have obtained the output characteristics of diodes with different cathode contacts in a wide range of frequencies. Harmonic and biharmonic modes of operation have been considered.
Storozhenko, I.P.   +2 more
openaire   +1 more source

Avalanche effects in Gunn diodes

IEEE Transactions on Electron Devices, 1967
J. Owens, G.S. Kino
openaire   +1 more source

Terahertz oscillations in an In0.53Ga0.47As submicron planar Gunn diode

Journal of Applied Physics, 2014
Ata Khalid, G M Dunn, Chong Li
exaly  

Gunn diode in video link

Electronics and Power, 1968
openaire   +1 more source

Simulation investigation of multiple domain observed in In0.23Ga0.77As planar Gunn diode

International Journal of Hydrogen Energy, 2016
Hongxia Liu, Y Alimi, Aimin Song
exaly  

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