Results 181 to 190 of about 972 (218)
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Solid-State Electronics, 1982
Abstract The low frequency noise of Gunn diodes fabricated by either a planar technique or a mesa technique on a GaAs substrate was measured. The existence of 1/ƒ noise was demonstrated. We were unable to discriminate between the number fluctuation model and the mobility fluctuation model of 1/ƒ noise. It seems from the data that Hooge's parameter α,
A. Peczalski, A. van der Ziel
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Abstract The low frequency noise of Gunn diodes fabricated by either a planar technique or a mesa technique on a GaAs substrate was measured. The existence of 1/ƒ noise was demonstrated. We were unable to discriminate between the number fluctuation model and the mobility fluctuation model of 1/ƒ noise. It seems from the data that Hooge's parameter α,
A. Peczalski, A. van der Ziel
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Improvement of reliability of Gunn diodes
Proceedings of the IEEE, 1969The reliability of Gunn diodes is greatly improved by using device structures which prevent high-field domains from reaching the anode.
M. Shoji, F.J. D'Alessio
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Pulse-Frequency Communication Using Gunn Diodes
IEEE Transactions on Communications, 1974With the help of the relevant equations and new experimental data on Gunn-effect diodes, both with InP and with GaAs, pulse frequency modulation is discussed for 1 Gigapulse/s with an X band carrier. Improvements in switching speeds are reported by multifrequency operation during transient.
H. Hartnagel, M. Kawashima
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Experimental and computer simulation analysis of a Gunn diode
IEEE Transactions on Microwave Theory and Techniques, 1971Bias voltage-and frequency-dependencies of dynamic admittance of a Gunn diode have been measured systematically in the 8 to 13GHz frequency range. We qualitatively verified the results by computer simulation.
Y. Ito +4 more
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Gunn Diode and IMPATT Diode Modelling
1993Transferred-electron devices (utilizing the bulk negative resistance of gallium arsenide, indium phosphide or related compounds) and avalanche devices that use impact ionization in high electric field — are the most powerful solid-state sources of microwave energy. In this Chapter, we discuss different approaches to modeling these devices.
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Design and Fabrication of Planar GaAs Gunn Diodes
IEICE Transactions on Electronics, 2008We studied planar graded-gap injector GaAs Gunn diodes designed for operation at 94GHz. Two types of planar Gunn diodes were designed and fabricated. In the first diode, a cathode was situated inside a circular anode with a diameter of 190μm. The distance between the anode and cathode varied from 60μm to 68μm depending on the cathode size.
Mi-Ra Kim +3 more
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Double-diode autodyne of 8mm-range on Gunn diodes
2016 9th International Kharkiv Symposium on Physics and Engineering of Microwaves, Millimeter and Submillimeter Waves (MSMW), 2016Operation principle, adjustment approach and construction description are given for double-diode autodyne module of 8mm-range made on the base of two mutually-synchronized partial oscillators on Gunn diodes. The block-diagram of a workbench is presented for determination of the motion speed and direction, vibration parameters and displacements of ...
V. Ya. Noskov +2 more
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2000 10th International Crimean Microwave Conference. "Microwave and Telecommunication Technology". Conference Proceedings (IEEE Cat. No.00EX415), 2000
Radiowave sensors based on planar transmission lines are widely used to design autodyne devices and systems for short-range radiolocation. The sensors are small, lightweight and cost-effective with high sensitivity. The possibilities of the sensors are especially expanded when based on modern active elements that use the GaAs structure with the ...
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Radiowave sensors based on planar transmission lines are widely used to design autodyne devices and systems for short-range radiolocation. The sensors are small, lightweight and cost-effective with high sensitivity. The possibilities of the sensors are especially expanded when based on modern active elements that use the GaAs structure with the ...
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On the equivalent circuit of a Gunn diode†
International Journal of Electronics, 1967ABSTRACT A consistent derivation of the small-signal equivalent circuit is given for a Gunn diode while being traversed by a steady-state high field domain. The result of Hobson is confirmed, but with a somewhat different meaning of the domain negative conductance and of the domain capacitance.
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Double transit region Gunn diodes
Semiconductor Science and Technology, 2007We report the first epitaxially grown, double transit region Gunn diode oscillator. The prototype device was operated at its second harmonic of 77 GHz, giving an RF output power of 64 mW as compared with 54 mW from the corresponding single transit region device.
K S Lau +8 more
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