Results 261 to 270 of about 3,015,797 (333)
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Ferroelectric Hafnium Oxide Films for In‐Memory Computing Applications
Advanced Electronic Materials, 2022Traditional von Neumann architecture is facing severe challenges due to separated physical structure of memory and processing units, which inspires the development of in‐memory computing electronics.
Zhenhai Li +8 more
semanticscholar +1 more source
Auger parameter of hafnium in elemental hafnium and in hafnium oxide
Surface Science, 2004Abstract X-ray photoelectron spectroscopy has been used to determine the Auger parameters in elemental hafnium and in hafnium oxide (HfO2). The zirconium Lα line has been used as a source of excitation to study the 3d core levels of hafnium, the 1s core level of oxygen, and the X-ray excited MNN Auger region of hafnium and KVV Auger region of oxygen.
A.R. Chourasia, R.L. Miller
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Hafnium Oxide-Based Nanoplatform for Combined Chemoradiotherapy
ACS Biomaterials Science & Engineering, 2021Recently, the combined therapy has become one of the main approaches in cancer treatment. Combining different approaches may provide a significant outcome by triggering several death mechanisms or causing increased damage of tumor cells without hurting healthy ones.
Anastasiia A. Sherstiuk +6 more
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Investigation of Heterostructures Based on Hafnium Oxide
Bulletin of the Russian Academy of Sciences: Physics, 2023We presented ab initio calculations of bulk structures and thin films of hafnium oxide, and heterostructures based on hafnium oxide in the tetragonal phase and silicon, structural and electronic properties are investigated. The density of states spectra is considered, the results obtained are analyzed, and some of them are compared with previously ...
Y. I. Sharifullina +3 more
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Laser & Photonics Reviews, 2022
Power consumption of photonic integrated circuits becomes a critical consideration. A new platform is proposed for ultralow‐power tuning in silicon photonics via piezo‐optomechanical coupling using hafnium‐oxide actuators.
Jian Shen +8 more
semanticscholar +1 more source
Power consumption of photonic integrated circuits becomes a critical consideration. A new platform is proposed for ultralow‐power tuning in silicon photonics via piezo‐optomechanical coupling using hafnium‐oxide actuators.
Jian Shen +8 more
semanticscholar +1 more source
IEEE Electron Device Letters, 2021
This letter demonstrates a high performance $\beta $ -Ga2O3 solar-blind metal–oxide–semiconductor field-effect phototransistor (SBPT) with Hafnium Oxide (HfO2) Gate Dielectric.
Zhe Li +9 more
semanticscholar +1 more source
This letter demonstrates a high performance $\beta $ -Ga2O3 solar-blind metal–oxide–semiconductor field-effect phototransistor (SBPT) with Hafnium Oxide (HfO2) Gate Dielectric.
Zhe Li +9 more
semanticscholar +1 more source
Acta Metallurgica, 1957
Abstract Hafnium oxidation rates at 760-mm oxygen pressure in the temperature range 350°–1200°C have been represented by logarithmic, parabolic, and linear-rate equations. The respective activation energies for the rate constants were 11.4, 36.0, and 26.1 kcal/mole.
W.W Smeltzer, M.T Simnad
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Abstract Hafnium oxidation rates at 760-mm oxygen pressure in the temperature range 350°–1200°C have been represented by logarithmic, parabolic, and linear-rate equations. The respective activation energies for the rate constants were 11.4, 36.0, and 26.1 kcal/mole.
W.W Smeltzer, M.T Simnad
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, 2021
Ferroelectric hafnium oxide (HfO2) has been extensively studied for over a decade, especially as a CMOS-compatible material in emerging memory applications.
E. Breyer +3 more
semanticscholar +1 more source
Ferroelectric hafnium oxide (HfO2) has been extensively studied for over a decade, especially as a CMOS-compatible material in emerging memory applications.
E. Breyer +3 more
semanticscholar +1 more source
Reliability aspects of ferroelectric hafnium oxide for application in non-volatile memories
IEEE International Reliability Physics Symposium, 2021Ferroelectricity in hafnium oxide can solve the scaling issues associated with integrating perovskite based ferroelectric into CMOS processes. With the advent of this new ferroelectric material, basic reliability challenges associated with retention ...
H. Mulaosmanovic +5 more
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Long time transients in hafnium oxide
Microelectronic Engineering, 2007In this work characterization of HfO"2 films in transient regime is presented. Charge trapping and detrapping, and degradation transients were investigated at long times while monitoring gate current or voltage. As for charge trapping, a logarithmic dependence on time was found.
PUZZILLI, Giuseppina, IRRERA, Fernanda
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