Results 61 to 70 of about 3,015,797 (333)
Pentacene-Based Thin-Film Transistors With a Solution-Process Hafnium Oxide Insulator [PDF]
, 2009 —Pentacene-based organic thin-film transistors with solution-process hafnium oxide (HfOx) as gate insulating layer have been demonstrated. The solution-process HfOx could not only exhibit a high-permittivity (κ = 11) dielectric constant but also has ...
Adriyanto, Feri +6 more
core
Properties and characterization of ALD grown dielectric oxides for MIS structures
, 2011 We report on an extensive structural and electrical characterization of under-gate dielectric oxide insulators Al2O3 and HfO2 grown by Atomic Layer Deposition (ALD).
Dietl, T. +9 more
core +1 more source
High resolution photoemission study of SiOx/Si(111) interface disruption following in situ HfO₂deposition [PDF]
, 2009 We report on an in situ high resolution core level photoemission study of the early stages of interface formation between an ultrathin SiOx layer ( ∼ 0.3 nm) grown on the atomically clean Si(111) surface and a HfO2 dielectric layer.
Brennan, Barry +2 more
core +1 more source
Advanced Engineering Materials, EarlyView.Four‐point bending tests are conducted in an argon atmosphere on commercial MgO‐C brick grades with and without MgO‐C recyclate from room temperature up to 1300 °C. No detrimental effect of the MgO‐C recyclates on bending strength is found. Instead, a decisive influence of the total carbon content is observed, with lower total carbon contents ...
Alexander Schramm +5 more
wiley +1 more source
Sensors, 2019 This study shows that a silicon–aluminum oxide–hafnium aluminum oxide-silicon oxide–silicon capacitor device with a high temperature pre-metal-anneal-treated and partially-nanocrystallized hafnium aluminum oxide, (hereafter PNC-SAHAOS ...
Wen-Ching Hsieh
doaj +1 more source
Method for producing fiber reinforced metallic composites Patent [PDF]
, 1967 Description of method for producing metallic composites reinforced with ceramic and refractory hard metals that are fibered in ...
Jech, R. W. +2 more
core +1 more source
GaAs interfacial self-cleaning by atomic layer deposition [PDF]
, 2008 The reduction and removal of surface oxides from GaAs substrates by atomic layer deposition (ALD) of Al2O3 and HfO2 are studied using in situ monochromatic x-ray photoelectron spectroscopy.
A. M. Sonnet +12 more
core +1 more source
Advanced Functional Materials, EarlyView.MXene dervied CoFe composites show increased initial Oxygen Evolution Reaction (OER) activity compared to the pure CoFe and MXene in an Anion Exchange Membrane device. Vanadium vacancies in the MXene plays a role in increased OER activity and hinders Fe leaching in the AEM device over using the pure V2C MXene as a support material for the CoFe ...
Can Kaplan +16 more
wiley +1 more source
Ceramic material suitable for repair of a space vehicle component in a microgravity and vacuum environment, method of making same, and method of repairing a space vehicle component [PDF]
, 2009 A precursor of a ceramic adhesive suitable for use in a vacuum, thermal, and microgravity environment. The precursor of the ceramic adhesive includes a silicon-based, preceramic polymer and at least one ceramic powder selected from the group consisting ...
Easler, Timothy E., Riedell, James A.
core +1 more source
Reduction of hafnium oxide and hafnium silicate by rhenium and platinum [PDF]
Applied Physics Letters, 2006 We report chemical interactions of Hf-based dielectrics with Re and Pt overlayers during annealing. Reduction of the Hf to a suboxide is observed by x-ray photoelectron spectroscopy, along with a decrease in total oxygen content measured by medium-energy ion scattering.
M. Copel +3 more
openaire +1 more source