Results 81 to 90 of about 7,647 (298)

Emulsion Liquid Membrane Extraction Of Zr And Hf From Acid Nitric Using Extractant Topo [PDF]

open access: yes, 2017
EKSTRAKSI EMULSI MEMBRANE CAIR Zr dan HF DALAM LARUTAN ASAM NITRAT DENGAN EKSTRAKTAN TOPO. Telah dilakukan ekstraksi larutan Zr yang mengandung Hf menggunakan extraktan TOPO.
Basuki, K. T. (Kris)   +1 more
core   +2 more sources

Utilization of oxygen content modulated Ru electrode to examine the interfacial redox chemistry of ferroelectric Hf0.5Zr0.5O2

open access: yesJournal of Materiomics
The impact of oxygen content in the Ru electrode, grown using atomic layer deposition on ferroelectricity in Hf0.5Zr0.5O2 film is investigated. The oxygen content in Ru can be modulated by simply adjusting the deposition temperature from 210 °C to 300 °C.
Kun Yang   +10 more
doaj   +1 more source

Nanozymes Integrated Biochips Toward Smart Detection System

open access: yesAdvanced Science, EarlyView.
This review systematically outlines the integration of nanozymes, biochips, and artificial intelligence (AI) for intelligent biosensing. It details how their convergence enhances signal amplification, enables portable detection, and improves data interpretation.
Dongyu Chen   +10 more
wiley   +1 more source

Critical Metals in Strategic Energy Technologies - Assessing Rare Metals as Supply-Chain Bottlenecks in Low-Carbon Energy Technologies [PDF]

open access: yes, 2011
Due to the rapid growth in demand for certain materials, compounded by political risks associated with the geographical concentration of the supply of them, a shortage of these materials could be a potential bottleneck to the deployment of low-carbon ...
KARA Hudai   +4 more
core   +1 more source

Preparation and Research of High-performance Hf0.5Zr0.5O2 Ferroelectric thin Films on Flexible Mica Substrates

open access: yesGongneng cailiao yu qijian xuebao
Hafnium-based ferroelectric films are compatible with conventional CMOS processing and have good ferroelectric properties at ultra-thin film with thicknesses down to 1 nm.
Jia-ning SHEN
doaj   +1 more source

Noise Fingerprints as a Quantitative Order Parameter for Polarization‐ and Defect‐Mediated Switching in Hafnia Ferroelectrics

open access: yesAdvanced Science, EarlyView.
Low‐frequency noise fingerprints in hafnia ferroelectrics provide a quantitative handle to resolve the long‐standing debate between polarization‐mediated and defect‐mediated switching. By tuning oxygen vacancy density via ALD O3 dose time and applying a physically constrained deconvolution, we extract bias‐resolved current fractions for both mechanisms
Ryun‐Han Koo   +8 more
wiley   +1 more source

Mechanisms of nonstoichiometry in HfN1-x [PDF]

open access: yes, 2009
Density functional theory is used to calculate defect structures that can accommodate nonstoichiometry in hafnium nitride: HfN1-x, 0 ≤ X ≤ 0.25. It is predicted that a mechanism assuming simple distributions of nitrogen vacancies can accurately describe ...
Ashley, N. J.   +3 more
core   +1 more source

Tunable Microwave Filters Using HfO2-Based Ferroelectrics

open access: yesNanomaterials, 2020
In this paper, we present microwave filters that are based on 6-nm-thick ferroelectric thin films of hafnium oxide doped with zirconium (HfZrO), which are tunable continuously in targeted bands of interest within the frequency range 0.1–16 GHz, when the ...
Martino Aldrigo   +4 more
doaj   +1 more source

From Solution to Surface: How the Catalytic Environment Modulates Peptide Bond Cleavage by Metal‐Oxo Cluster Nanozymes

open access: yesAdvanced Science, EarlyView.
Comparison of homogeneous Hf12(sol) and heterogeneous Hf12(precip) metal‐oxo clusters enables investigation of how solubility influences nanozymatic reactivity and selectivity toward proteolysis, without introducing confounding factors from differences in cluster identity.
Kilian Declerck   +7 more
wiley   +1 more source

Towards wake-up free ferroelectrics and scaling: Al-doped HZO and its crystallographic texture

open access: yesMemories - Materials, Devices, Circuits and Systems
Ferroelectric (FE) hafnium zirconium oxide (HZO) is an excellent candidate for data storage applications. However, it has some reliability limitations such as imprint and retention. Herein, we explore Al doping of HZO to overcome these limitations.
Ayse Sünbül   +9 more
doaj   +1 more source

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