Results 151 to 160 of about 25,253 (200)

Approach to the Patient With Pancreatogenic Diabetes.

J Clin Endocrinol Metab
Ode KL, Imai Y, Norris AW.
europepmc   +1 more source

An Improved Nonlinear Capacitance Model for GaN HEMTs Based on the Angelov Model. [PDF]

Micromachines (Basel)
Miao Y, Yuan Q, Wang C, Cheng J.
europepmc   +1 more source

The State of Weight in Cystic Fibrosis: Understanding Nutritional Status and Individualizing Nutritional Care in the Modulator Era. [PDF]

Nutrients
Khemka S, Hunter S, Jones J, Valentín-Martínez K, Chadwick CB, Bass R.   +5 more
europepmc   +1 more source

Monolithically Integrated THz Detectors Based on High-Electron-Mobility Transistors. [PDF]

Sensors (Basel)
Rämer A, Negri E, Dischke E, Chevtchenko S, Yazdani H, Schellhase L, Krozer V, Heinrich W.   +7 more
europepmc   +1 more source

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ASM-HEMT: Compact model for GaN HEMTs

2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), 2015
In this paper, we aim to present the Advances Spice Model for High Electron Mobility Transistors (ASM-HEMT). The model is currently being considered in the second phase of industry standardization by the Compact Model Coalition (CMC). The presented physical model is surface potential based and is computationally efficient by virtue of being completely ...
Avirup Dasgupta, Sudip Ghosh, Yogesh Singh Chauhan, Sourabh Khandelwal   +3 more
openaire   +1 more source

High-speed MSM/HEMT and p-i-n/HEMT monolithic photoreceivers

IEEE Transactions on Microwave Theory and Techniques, 2002
The design, fabrication, and performance of monolithically integrated MSM-HEMT and PIN-HEMT photoreceivers are described. PIN-HEMT photoreceivers with 701 /spl Omega/ of transimpedance over an 8.3 GHz bandwidth have been fabricated, and the sensitivity was measured and found to be -17.7 dBm at 10 Gb/s and -15.8 dBm at 12 Gb/s for a 2/sup 31/-1 pattern ...
P. Fay, C. Caneau, I. Adesida
openaire   +2 more sources

Compare noise characteristic of DC-HEMT and HEMT

2013 21st Iranian Conference on Electrical Engineering (ICEE), 2013
We compare noise characteristics of Al0.3Ga0.7N /GaN/ Al0.06Ga0.94N/GaN DC-HEMT and Al0.3Ga0.7N /GaN HEMT. The DC-HEMT exhibits high gain and high current and low noise. The noise characteristics are calculated as a function of gate voltage as well as drain voltage. The noise curve versus gate voltage also shows three regions.
Sonia Sadeghi, Mehdi Vadizadeh, Rahim Faez   +2 more
openaire   +1 more source

Enhancement‐mode AlGaN/GaN HEMT and MIS‐HEMT technology

physica status solidi (a), 2010
AbstractAlGaN/GaN heterostructure devices are capable of delivering high‐frequency power amplifiers and power switches with performances far superior than those offered by the mainstream silicon technology and other advanced semiconductor technologies.
Chen, Kevin J., Zhou, Chunhua
openaire   +2 more sources