Results 181 to 190 of about 25,253 (200)
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HEMT Models and Simulations

1996
The paper presents a series of modeling tools for pseudomorphic High Electron Mobility Transistors, discussing their physical content and presenting specific applications. The presented results will show the most peculiar features of electronic transport in such device.
P. Lugli   +8 more
openaire   +1 more source

Multigate MOS-HEMT

2022
Atanu Kundu, Mousiki Kar
openaire   +1 more source

HEMT LSI Circuits

Extended Abstracts of the 1984 International Conference on Solid State Devices and Materials, 1984
M. Abe   +4 more
openaire   +1 more source

HEMT Devices

1993
Masayuki Abe, Takashi Mimura
openaire   +1 more source

GaAlN/GaN HEMT heterostructures grown on ‘SiCopSiC' composite substrates for HEMT application

2008
In this paper, we report on an innovative solution based on "composite substrates". The GaAlN/GaN HEMT structures are grown on SiCopSiC composite substrates made of thin single crystal SiC “seed layer” transferred on top of a thick polycrystalline SiC, following the "Smart Cut" technology developed by SOITEC.
Di Forte-Poisson, M.A.   +12 more
openaire   +2 more sources

HEMT Materials

1993
Kazuo Kondo, Junji Komeno
openaire   +1 more source

HEMT Modelling

1993
Michael Shur, Tor A. Fjeldly
openaire   +1 more source

Lateral GaN HEMT Structures

2018
This chapter describes the basic GaN-based HEMT device, including the polarization effects and surface states responsible for the formation of the 2DEG in AlGaN/GaN heterostructures. GaN HEMT device structure innovations for increasing the channel mobility, reducing the current collapse phenomena, achieving high voltage breakdown, and enabling normally
openaire   +1 more source

Subcircuit Modeling of Dual Channel MOS-HEMTs Using Standard ASM-HEMT

IEEE Transactions on Electron Devices, 2023
Raghvendra Dangi   +3 more
openaire   +1 more source

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