Results 1 to 10 of about 18,854 (177)

Characteristics and Electronic Band Alignment of a Transparent p-CuI/n-SiZnSnO Heterojunction Diode with a High Rectification Ratio [PDF]

open access: yesNanomaterials, 2021
Transparent p-CuI/n-SiZnSnO (SZTO) heterojunction diodes are successfully fabricated by thermal evaporation of a (111) oriented p-CuI polycrystalline film on top of an amorphous n-SZTO film grown by the RF magnetron sputtering method.
Jeong Hyuk Lee   +7 more
doaj   +2 more sources

Fabrication of Ga2O3 Schottky Barrier Diode and Heterojunction Diode by MOCVD. [PDF]

open access: yesMaterials (Basel), 2022
In this article, we reported on a Ga2O3-based Schottky barrier diode and heterojunction diode from MOCVD. The Si-doped n-type Ga2O3 drift layer, grown by MOCVD, exhibited high crystal quality, flat surfaces, and uniform doping. The distribution of unintentional impurities in the films was studied.
Jiao T   +8 more
europepmc   +3 more sources

Understanding of MoS2/GaN Heterojunction Diode and its Photodetection Properties [PDF]

open access: yesScientific Reports, 2018
Fabrication of heterojunction between 2D molybdenum disulfide (MoS2) and gallium nitride (GaN) and its photodetection properties have been reported in the present work.
Monika Moun   +4 more
doaj   +2 more sources

A Trench Heterojunction Diode-Integrated 4H-SiC LDMOS with Enhanced Reverse Recovery Characteristics [PDF]

open access: yesMicromachines
In this paper, a novel 4H-SiC LDMOS structure with a trench heterojunction in the source (referred as to THD-LDMOS) is proposed and investigated for the first time, to enhance the reverse recovery performance of its parasitic diode. Compared with 4H-SiC,
Yanjuan Liu, Fangfei Bai, Junpeng Fang
doaj   +2 more sources

A Novel Asymmetric Trench SiC Metal–Oxide–Semiconductor Field-Effect Transistor with a Poly-Si/SiC Heterojunction Diode for Optimizing Reverse Conduction Performance [PDF]

open access: yesMicromachines
In this paper, a novel asymmetric trench SiC MOSFET with a Poly-Si/SiC heterojunction diode (HJD-ATMOS) is designed to improve its reverse conduction characteristics and switching performance.
Yiren Yu   +4 more
doaj   +2 more sources

One-Dimensional van der Waals Heterojunction Diode [PDF]

open access: yesACS Nano, 2021
29 pages, 6 ...
Ya Feng   +6 more
openaire   +3 more sources

Cupric oxide (CuO)/zinc oxide (ZnO) heterojunction diode with low turn-on voltage

open access: yesResults in Physics, 2021
The p-n junction is the fundamental form of an electronic semiconductor device. A p-CuO/n-ZnO heterojunction diode was formed by using thermal evaporation and thermal oxidation techniques.
Roberto López   +7 more
doaj   +1 more source

4H-SiC Double-Trench MOSFET with Side Wall Heterojunction Diode for Enhanced Reverse Recovery Performance

open access: yesEnergies, 2020
In this study, a novel 4H-SiC double-trench metal-oxide semiconductor field-effect transistor (MOSFET) with a side wall heterojunction diode is proposed and investigated by conducting numerical technology computer-aided design simulations.
Junghun Kim, Kwangsoo Kim
doaj   +1 more source

Study of p-SiC/n-GaN Hetero-Structural Double-Drift Region IMPATT Diode

open access: yesMicromachines, 2021
Nowadays, the immature p-GaN processes cannot meet the manufacturing requirements of GaN impact ionization avalanche transit time (IMPATT) diodes. Against this backdrop, the performance of wide-bandgap p-SiC/n-GaN heterojunction double-drift region (DDR)
Yang Dai   +10 more
doaj   +1 more source

SnO/β-Ga2O3 vertical pn heterojunction diodes [PDF]

open access: yesApplied Physics Letters, 2020
As a contribution to (transparent) bipolar oxide electronics, vertical pn heterojunction diodes were prepared by plasma-assisted molecular beam epitaxy of unintentionally doped p-type SnO layers with hole concentrations ranging from p=1018 to 1019 cm−3 on unintentionally doped n-type β-Ga2O3(−201) substrates with an electron concentration of n=2.0×1017
Melanie Budde   +8 more
openaire   +3 more sources

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