Results 21 to 30 of about 497,014 (306)
Avalanche noise characteristics of single Al/sub x/Ga/sub 1-x/As(0.3 [PDF]
, 2005 Avalanche multiplication and excess noise have been measured on a series of Al/sub x/Ga/sub 1-x/As-GaAs and GaAs-Al/sub x/Ga/sub 1-x/As (x=0.3,0.45, and 0.6) single heterojunction p/sup +/-i-n/sup +/ diodes.
Chia, C.K. +4 more
core +1 more source
Sensors, 2020 Two-dimensional (2D) materials, such as molybdenum disulfide (MoS2) of the transition metal dichalcogenides family, are widely investigated because of their outstanding electrical and optical properties.
Yoonsok Kim, Taeyoung Kim, Eun Kyu Kim
doaj +1 more source
Journal of Materials Research and Technology, 2022 A 3-terminal device with a tunable Schottky barrier controls the charge transport across a vertically stacked structure named “barristor”- one composed of a graphene/rhenium diselenide (ReSe2) p-n heterojunction to exploit the advantages of the high ...
Thi Phuong-Anh Bach +7 more
doaj +1 more source
Medžiagotyra, 2014 In this paper we reveal electrical detection properties of planar MBE grown GaAs/Al0.25Ga0.75As heterojunction diode at different ambient temperatures.
Algirdas SUŽIEDĖLIS +10 more
doaj +1 more source
Light Generation and Harvesting in a Van der Waals Heterostructure [PDF]
, 2014 Two-dimensional (2D) materials are a new type of materials under intense study because of their interesting physical properties and wide range of potential applications from nanoelectronics to sensing and photonics.
Kis, Andras +5 more
core +2 more sources
Low Switching Loss Split-Gate 4H-SiC MOSFET With Integrated Heterojunction Diode
IEEE Journal of the Electron Devices Society, 2022 A 4H-SiC MOSFET with p-type region injection and integrated split gate and heterojunction diode is proposed in this paper. Compared with the conventional MOSFET, the proposed structure has a lower on-resistance and switching loss.
Hai-Yong Xu +3 more
doaj +1 more source
Large-signal charge control modeling of photoreceivers for applications up to 40 Gb/s [PDF]
, 2009 A charge control model was used to simulate the sensitivity and responsivity in a range of photodetector configurations including heterojunction bipolar phototransistors (HPTs), PIN-HBT, and APDs.
Helme, J.P, Houston, P.A, Tan, C.H
core +1 more source
Modeling Changes in Measured Conductance of Thin Boron Carbide Semiconducting Films Under Irradiation [PDF]
, 2016 Semiconducting, p-type, amorphous partially dehydrogenated boron carbide films (a-B10C2+x:Hy) were deposited utilizing plasma enhanced chemical vapor deposition (PECVD) onto n-type silicon thus creating a heterojunction diode.
Ianno, Natale J. +3 more
core +2 more sources
Metal/BaTiO3/β-Ga2O3 dielectric heterojunction diode with 5.7 MV/cm breakdown field [PDF]
Applied Physics Letters, 2019 Wide and ultra-wide band gap semiconductors can provide excellent performance due to their high energy band gap, which leads to breakdown electric fields that are more than an order of magnitude higher than conventional silicon electronics.
Zhanbo Xia +10 more
semanticscholar +1 more source
Nanomaterials, 2023 Recently, the use of semiconductor-based photocatalytic technology as an effective way to mitigate the environmental crisis attracted considerable interest.
Yang Yu +7 more
doaj +1 more source