Results 31 to 40 of about 497,014 (306)
Preparation of Transparent N-Zno:Al / P-Cualcro2 Heterojunction Diodeby Sol-Gel Technology
Reviews on Advanced Materials Science, 2018 This paper presents the study of oxide film heterojunction made of CuAlCrO2 and ZnO:Al (AZO) deposited on fused quartz by sol-gel spin coating. Transmission electronmicroscopy (TEM) analysis has showed that the solvent, which was used to prepare the AZO ...
Shirshneva-Vaschenko E.V. +7 more
doaj +1 more source
High Photovoltaic Quantum Efficiency in Ultrathin van der Waals Heterostructures [PDF]
, 2017 We report experimental measurements for ultrathin (< 15 nm) van der Waals heterostructures exhibiting external quantum efficiencies exceeding 50%, and show that these structures can achieve experimental absorbance > 90%.
Atwater, Harry A. +6 more
core +4 more sources
l-Alanine capping of ZnO nanorods: increased carrier concentration in ZnO/CuI heterojunction diode. [PDF]
RSC Adv, 2018 ZnO nanorods were capped with a simple amino acid, viz., l-alanine to increase the carrier concentration and improve the performance of ZnO/CuI heterojunction diodes. The effect of l-alanine capping on the morphology, structural, optical, electrochemical
Indubala E +8 more
europepmc +2 more sources
Highly-mismatched InAs/InSe heterojunction diodes [PDF]
Applied Physics Letters, 2016 We report on heterojunction diodes prepared by exfoliation and direct mechanical transfer of a p-type InSe thin film onto an n-type InAs epilayer. We show that despite the different crystal structures and large lattice mismatch (∼34%) of the component layers, the junctions exhibit rectification behaviour with rectification ratios of ∼104 at room ...
A. V. Velichko +9 more
openaire +5 more sources
EPJ Web of Conferences, 2017 In this work, p-CuGaO2/n-ZnO heterojunction diodes were deposited by RF powered sputtering method on polyethylene terephthalate (PETP, PET) substrates.
Lam Mui Li +6 more
doaj +1 more source
Field dependence of impact ionization coefficients in In0.53Ga0.47As [PDF]
, 2003 Electron and hole ionization coefficients in In/sub 0.53/Ga/sub 0.47/As are deduced from mixed carrier avalanche photomultiplication measurements on a series of p-i-n diode layers, eliminating other effects that can lead to an increase in photocurrent ...
David, J.P.R. +4 more
core +1 more source
Temperature-dependent device properties of γ-CuI and β-Ga2O3 heterojunctions
SN Applied Sciences, 2021 Temperature-dependent studies of Ga2O3-based heterojunction devices are important in understanding its carrier transport mechanism, junction barrier potential, and stability at higher temperatures. In this study, we investigated the temperature-dependent
Rama Venkata Krishna Rao +5 more
doaj +1 more source
Nanomaterials, 2022 In this paper, we report a novel design of bismuth nanoparticle-passivated silicon nanowire (Bi@SiNW) heterojunction composites for high diode performances and improved effective carrier lifetime and absorption properties. High-density vertically aligned
Mariem Naffeti +4 more
doaj +1 more source
Heterojunction Hybrid Devices from Vapor Phase Grown MoS$_{2}$
, 2014 We investigate a vertically-stacked hybrid photodiode consisting of a thin n-type molybdenum disulfide (MoS$_{2}$) layer transferred onto p-type silicon.
Bablich, Andreas +11 more
core +1 more source
Micromachines, 2022 A novel Silicon-Carbide heterojunction U-MOSFET embedded a P-type pillar buried in the drift layer (BP-TMOS) is proposed and simulated in this study. When functioning in the on state, the merged heterojunction structure will control the parasitic body ...
Shenglong Ran +3 more
doaj +1 more source