Results 61 to 70 of about 497,014 (306)
Study of Electrical Properties of p-PbSe/p-Si Heterojunction [PDF]
Electrical properties of p-PbSe/p-Si heterojunction detector have beeninvestigated. The electrical properties under dark condition show a rectifyingbehaviour with low rectification factor, and exhibits soft breakdown reversecurrent.C-V characteristics ...
Uday Nayef
doaj +1 more source
In‐situ doping during growth of SnSe and subsequent attachment of SnS produces high‐quality lateral pn‐heterojunctions between van der Waals semiconductors. Electron beam induced current measurements demonstrate electrically active pn‐junctions, paving the way for devices that harness charge separation at lateral interfaces in layered heterostructures.
Peter Sutter +4 more
wiley +1 more source
In the present study, an n-ZnO nanorods (NRs)/p-degenerated diamond tunneling diode was investigated with regards to its temperature-dependent negative differential resistance (NDR) properties and carrier tunneling injection behaviors.
Dandan Sang +10 more
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Surface Diffusion in SnTe‐PbTe Monolayer Lateral Heterostructures
The lateral heterostructures between 2D materials often suffer from the interdiffusion at the interfaces. Here, a surface diffusion mechanism is found to be dominating at the interfaces between semiconducting SnTe and PbTe monolayers. Atomically sharp interfaces can be achieved by suppressing this diffusion process. ABSTRACT The construction of complex
Jing‐Rong Ji +9 more
wiley +1 more source
Metal-semiconductor Schottky diode with Landauer’s formalism
The Schottky barrier diode is a unipolar electronic device formed by the heterojunction of a metal and a semiconductor, widely used in various electronic and optoelectronic applications.
Antonio Di Bartolomeo +8 more
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The paper presents a new approach based on the appearance of negative capacitance (NC) at high and low frequencies; previously, researchers agreed that NC only occurred at high or low frequencies.
A Ashery, A E H Gaballah, Emad M Ahmed
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Poly[bis(4-phenyl) (2,4,6-trimethylphenylamine] (PTAA) is a new promising hole transport material, and [6,6]-Phenyl C61 butyric acid methyl ester (PCBM) is a suitable electron acceptor material.
Norjannah Yusop +7 more
doaj +1 more source
GaAs optoelectronic neuron arrays [PDF]
A simple optoelectronic circuit integrated monolithically in GaAs to implement sigmoidal neuron responses is presented. The circuit integrates a light-emitting diode with one or two transistors and one or two photodetectors. The design considerations for
Grot, Annette +3 more
core
Monolithically integrated InAsSb-based nBnBn heterostructure on GaAs for infrared detection [PDF]
High operating temperature i nfrared photo detectors with multi -color function that are capable of monolithic integration are of increasing importance in developing the next generation of mid -IR imag e ...
Craig, Adam P. +5 more
core +1 more source
Beyond the Edge: Charge‐Transfer Excitons in Organic Donor‐Acceptor Cocrystals
Complex excitonic landscapes in acene–perfluoroacene cocrystals are unveiled by polarization‐resolved optical spectroscopy and many‐body theory. This systematic study of a prototypical model system for weakly interacting donor–acceptor compounds challenges common views of charge‐transfer excitons, providing a refined conceptual framework for ...
Sebastian Anhäuser +6 more
wiley +1 more source

