Results 201 to 210 of about 5,577 (264)

Microfluidic self-quadruplexing SIW antenna with independent tuning and simultaneous sensing of liquid materials. [PDF]

Sci Rep
Prakash VJ, Chandu DS, Nagini KBSS, Barik RK, Koziel S.   +4 more
europepmc   +1 more source

Contact-dominated localized electric-displacement-field-enhanced pressure sensing. [PDF]

Nat Commun
Ma C, Ye H, Shi X, Chen Y, Liu Y, Qin L, Gan L, Xia F, Long G, Jiang X, Huang W, Chen X, Liang X, Peng LM, Hu Y.   +14 more
europepmc   +1 more source

Investigation of gate dielectric interface on contact resistance of short channel organic thin film transistors (OTFT). [PDF]

PLoS One
Prasanthi L, Panigrahy AK, Tata S, B RBJ, Rao TS, Prakash MD, Kundu SK.   +6 more
europepmc   +1 more source

High-κ dielectric van der Waals integration on 2D semiconductors for three-dimensional complementary logic systems. [PDF]

Nat Commun
Kang T, Park J, Lee SY, Jung H, Jeon J, Kim YH, Lee S.   +6 more
europepmc   +1 more source

Polarizable Thiol-Ene Cross-Linked Nitrile Dielectrics for Stretchable Low-Voltage Neuromorphic Transistors with Acoustic Classification. [PDF]

ACS Appl Mater Interfaces
Liu CJ, Hsiao SW, Chen QG, Hong QA, Lin YT, Chueh CC, Ng CT, Chang TT, Kim SH, Chiu YC, Lee WY.   +10 more
europepmc   +1 more source

Controllable growth of MoO₃ dielectrics with sub-1 nm equivalent oxide thickness for 2D electronics. [PDF]

Nat Commun
Li X, Xu S, Zhang Z, Yu Z, Pan Z, Yang Y, Lu X, Huo N.   +7 more
europepmc   +1 more source

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Numerical Study of the VDMOS with an Integrated High-K Gate Dielectric and High-K Dielectric Trench

2021 China Semiconductor Technology International Conference (CSTIC), 2021
The VDMOS with an integrated high-k gate dielectric and high - k dielectric trench is investigated in this paper. The high-k (HK) dielectric is applied both for the gate dielectric and trench, which improves the performance without increasing the process complexity.
Zhenyu Zhang, Jiafei Yao, Yufeng Guo, YongChen He, JinCheng Liu, Mingyuan Gu, Qicong Liang   +6 more
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Reliability characteristics of high-k dielectrics

Microelectronics Reliability, 2004
Abstract In this paper, recent results of Weibull slopes, area scaling factors, and breakdown behaviors observed for both soft breakdown and hard breakdown are discussed. These results would help to shed light on the breakdown mechanism of HfO 2 gate dielectrics.
Young-Hee Kim, Jack C. Lee
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Trapping in high-k dielectrics

Applied Physics Letters, 2010
In this paper, an analytical model of trapping in high-k dielectrics is proposed. It starts from the general rate equation and relies on the hypothesis that the density of states involved in the capture mechanism follows a Fermi-like distribution. Thus, the energy depth of the trap level respect to the Fermi level is explicited in the model.
RAO, ROSARIO, Riccardo Simoncini, IRRERA, Fernanda   +2 more
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High-K gate dielectrics

SPIE Proceedings, 1999
High-K dielectric thin films have been investigated as alternative gate dielectrics. Our results suggest that single-layer sputtered ZrO 2 or HfO 2 thin films deposited directly on Si substrate, without the use of a barrier layer, exhibit excellent electrical and reliability characteristics.
Wen-Jie Qi, Byoung H. Lee, Renee Nieh, LaeGu Kang, YongJoo Jeon, Katsu Onishi, Jack C. Lee   +6 more
openaire   +1 more source