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Nanoanalysis of high-k dielectrics on semiconductors

2008 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2008
Replacement high-k dielectrics for Si(O,N) in MOSFETs undergo many physical and chemical changes during deposition and processing. The situation is even more complicated when a metal electrode is inserted into the gate stack. Investigation of such systems using advanced nanoanalytical techniques in the transmission electron microscope is discussed.
A. J. Craven, M. MacKenzie, D.W. McComb
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Epitaxial high-k dielectrics on silicon

The Fifth International Conference on Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004., 2005
Aggressive reduction in the thickness of SiO2-based gate dielectrics in ULSI devices brings about a number offimdamental problems, the most critical ones being reduced dielectric reliability and exponentially increasing leakage (tunneling) current with decreasing oxide thickness.
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Hf-based high-K dielectrics

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765), 2003
We report recent results on the effects of high-temperature forming gas and deuterium anneals on performance and reliability characteristics and the effects of AC and DC stress on bias-temperature instability and time-dependent dielectrics breakdown.
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Device Principles of High-K Dielectrics

2006
The growth of the semiconductor industr yi nt he last few decades has largely been driven by the growth of integrated circuits (IC) based on complementary metal– oxide–semiconductor (CMOS) technology. CMOS technology uses n-type and p-type field effect transistors (FETs) to produce digita ll ogi ce lements that are superior to other available logic ...
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Suppressing the Loss of Polymer‐Based Dielectrics for High Power Energy Storage

Advanced Materials, 2023
Zhi-Min Dang   +2 more
exaly  

Polymer Dielectrics with Simultaneous Ultrahigh Energy Density and Low Loss

Advanced Materials, 2021
Lin Zhang, , Houbing Huang
exaly  

A Review on Dielectric Breakdown in Thin Dielectrics: Silicon Dioxide, High‐k, and Layered Dielectrics

Advanced Functional Materials, 2020
Fei Hui   +2 more
exaly  

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