Results 231 to 240 of about 57,323 (293)

Integration of Freestanding High-k Oxide Membranes for 2D Ferroelectric Field-Effect Transistors. [PDF]

Adv Sci (Weinh)
Guo Z, Sha X, Xu F, Huang G, Zhang J, Mou Y, Zhao G, Liu J, Lan Q, Song W, Zhang C, Huang H, Zheng C, Wang L, Guo H, Shen J, Shi W.   +16 more
europepmc   +1 more source

Multi‐Functional ZnO–Te Heterojunction Devices Enabling Compact Frequency Quadrupler

Advanced Functional Materials, EarlyView.
Wafer‐scale ZnO–Te heterojunction devices featuring tunable double negative differential transconductance (D‐NDT) are demonstrated at ≤ 200°C. Leveraging this unique characteristic, a single‐stage frequency quadrupler is realized, achieving a 64%–75% reduction in device count.
Jae Hyeon Jun, Byeong Gwan Kim, Min Seo Kang, Ui Gwan Shin, Minjae Kim, Kiyung Kim, Hae‐Won Lee, Yongsu Lee, Byoung Hun Lee   +8 more
wiley   +1 more source

Enhancing InGaZnO transistor current through high-κ dielectrics and interface trap extraction using single-pulse charge pumping. [PDF]

Sci Rep
Park J, Kim HB, Yu SM, Kim K, Baeck JH, Noh J, Park KS, Yoon SY, Ahn JH, Oh S.   +9 more
europepmc   +1 more source

Critical Role of Polymer Gate Dielectrics on the Charge Carrier Transport in Perovskite Field‐Effect Transistors

Advanced Functional Materials, EarlyView.
Charge transport in 2D tin perovskite FETs is shown to be governed by dielectric interface behavior. Polar polymer dielectrics induce dipolar disorder that localizes carriers, whereas nonpolar polymers suppress trapping and enable superior charge transport, ensuring stable and reliable transistor operation. ABSTRACT Understanding the role of interfaces
Chongyao Li, Zhitian Ling, Pawel Czulkin, Paul W. M. Blom, Wojciech Pisula, Tomasz Marszalek   +5 more
wiley   +1 more source

Sacrifice-layer-free transfer of wafer-scale atomic-layer-deposited dielectrics and full-device stacks for two-dimensional electronics. [PDF]

Nat Commun
He Y, Lv Z, Liu Z, Yang M, Ai W, Chen J, Chen W, Wang B, Fu X, Luo F, Wu J.   +10 more
europepmc   +1 more source

Auger Electron Spectroscopy for Chemical Analysis of Passivated (Al,Ga)N-Based Systems. [PDF]

Micromachines (Basel)
Domanowska A, Adamowicz B.
europepmc   +1 more source

Direct observation of 3D nitrogen distribution in silicon-based dielectrics using atom probe tomography. [PDF]

Nat Commun
Chae BG, Won JY, Shin YS, Yun DJ, Ahn JM, Park ST, Lee KB, An H, Seol M, Ro IJ, Kim SH, Chung C, Lee E.   +12 more
europepmc   +1 more source

Ultra low-field-emission stretchable electroluminescent devices enabled by a transparent and high-κ dielectric gel. [PDF]

Nat Commun
Liu Z, Liu Z, Lei X, Yang Y, Jing T.
europepmc   +1 more source

Two-dimensional layered metal oxides (2D LMOs) for next-generation electronic devices. [PDF]

Nanoscale Adv
Verma A, Rani A, Yadav BC.
europepmc   +1 more source

The Clausius-Mossotti Factor in Dielectrophoresis: A Critical Appraisal of Its Proposed Role as an 'Electrophysiology Rosetta Stone'. [PDF]

Micromachines (Basel)
Pethig R.
europepmc   +1 more source