Results 231 to 240 of about 22,416,589 (293)

Electrostatic Doping of 2D Semiconductors Using Charged Dielectric Thin Films. [PDF]

ACS Nano
Niu X, O'Sullivan J, Han B, Liu L, Cui Y, Wang Y, Chhowalla M, Bonilla RS.   +7 more
europepmc   +1 more source

van der Waals dielectrics for threshold engineering in two-dimensional field effect transistors. [PDF]

Nat Commun
Sen D, Ravichandran H, Imam S, Ghosh S, Mukhopadhyay K, Bashir MY, Ie TS, Mazanek V, Luxa J, Chen C, Redwing JM, Sofer Z, Sahay S, Kanatzidis MG, Das S.   +14 more
europepmc   +1 more source

A clean van der Waals interface between the high-<i>k</i> dielectric zirconium oxide and two-dimensional molybdenum disulfide. [PDF]

Nat Electron
Yan H, Wang Y, Li Y, Phuyal D, Liu L, Guo H, Guo Y, Lee TL, Kim M, Jeong HY, Chhowalla M.   +10 more
europepmc   +1 more source

Si-doped CsSrI₃ perovskites as potential dielectrics in MIM capacitors: recent advances, limitations and prospects. [PDF]

RSC Adv
Itas YS, Khandaker MU, Haldhar R, Alrahili MR.   +3 more
europepmc   +1 more source

Superacid treatment of dielectric-encapsulated monolayer molybdenum disulfide for enhanced photoluminescence.

J Mater Chem C Mater
Healy BFM, Hall KJ, Pain SL, Grant NE, Murphy JD.   +4 more
europepmc   +1 more source

Trapping in high-k dielectrics

Applied Physics Letters, 2010
In this paper, an analytical model of trapping in high-k dielectrics is proposed. It starts from the general rate equation and relies on the hypothesis that the density of states involved in the capture mechanism follows a Fermi-like distribution. Thus, the energy depth of the trap level respect to the Fermi level is explicited in the model.
RAO, ROSARIO, Riccardo Simoncini, IRRERA, Fernanda   +2 more
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Selective Removal of High-k Dielectrics

ECS Transactions, 2011
Continuous downscaling of integrated circuits brought an end to the era of SiO2. In gate dielectrics, it is being replaced by materials with high dielectric constant, so-called high-k dielectrics. One of the challenges in the integration of the high-k material is removal of those materials selectively over the substrate.
Denis Shamiryan, Vasile Paraschiv
openaire   +2 more sources

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Numerical Study of the VDMOS with an Integrated High-K Gate Dielectric and High-K Dielectric Trench

2021 China Semiconductor Technology International Conference (CSTIC), 2021
The VDMOS with an integrated high-k gate dielectric and high - k dielectric trench is investigated in this paper. The high-k (HK) dielectric is applied both for the gate dielectric and trench, which improves the performance without increasing the process complexity.
Zhenyu Zhang, Jiafei Yao, Yufeng Guo, YongChen He, JinCheng Liu, Mingyuan Gu, Qicong Liang   +6 more
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Reliability characteristics of high-k dielectrics

Microelectronics Reliability, 2004
Abstract In this paper, recent results of Weibull slopes, area scaling factors, and breakdown behaviors observed for both soft breakdown and hard breakdown are discussed. These results would help to shed light on the breakdown mechanism of HfO 2 gate dielectrics.
Young-Hee Kim, Jack C. Lee
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High-K gate dielectrics

SPIE Proceedings, 1999
High-K dielectric thin films have been investigated as alternative gate dielectrics. Our results suggest that single-layer sputtered ZrO 2 or HfO 2 thin films deposited directly on Si substrate, without the use of a barrier layer, exhibit excellent electrical and reliability characteristics.
Wen-Jie Qi, Byoung H. Lee, Renee Nieh, LaeGu Kang, YongJoo Jeon, Katsu Onishi, Jack C. Lee   +6 more
openaire   +1 more source