Results 251 to 260 of about 57,323 (293)

Selective Removal of High-k Dielectrics

ECS Transactions, 2011
Continuous downscaling of integrated circuits brought an end to the era of SiO2. In gate dielectrics, it is being replaced by materials with high dielectric constant, so-called high-k dielectrics. One of the challenges in the integration of the high-k material is removal of those materials selectively over the substrate.
Denis Shamiryan, Vasile Paraschiv
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High-k dielectrics and MOSFET characteristics

IEEE International Electron Devices Meeting 2003, 2004
High dielectric constant materials have been investigated for gate dielectric applications. In this paper, various techniques (e.g. optimization of interfacial layer, N and Si incorporation and optimized profiles, forming gas anneal) for improving channel mobility, EOT scaling and reliability of high-k devices is discussed.
J.C. Lee, H.J. Cho, C.S. Kang, S. Rhee, Y.H. Kim, R. Choi, C.Y. Kang, C. Choi, M. Abkar   +8 more
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Discriminating High k Dielectric Gas Sensors

Materials Science Forum, 2014
High temperature gas sensors for the detection of harmful gases under extreme conditions have been demonstrated. Here, we show the detection and selective response of two SiC based MIS sensor structures with HfO2 and TiO2 high κ dielectric layers to two different hydrogen containing gases. The structures utilise a Pt catalytic gate contact and a high-κ
Sandip Kumar Roy, Konstantin V. Vassilevski, Christopher J. O'Malley, Nick G. Wright, Alton B. Horsfall   +4 more
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Effective Dielectric Thickness Scaling for High-K Gate Dielectric Mosfets

MRS Proceedings, 2002
AbstractIt has been shown recently that the short channel performance worsens for high-K dielectric MOSFETs as the physical thickness to the channel length ratio increases, even when the effective oxide thickness (EOT) is kept identical to that of SiO2. In this work we have systematically evaluated the effective dielectric thickness for different Kgate
Krishna Kumar Bhuwalka, Nihar R. Mohapatra, Siva G. Narendra, V Ramgopal Rao   +3 more
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Local Dielectric Constant Density Analysis of High-k Dielectric Nanomaterial

2020
This article reviews progress of recently proposed local dielectric constant and polarizability. Local dielectric constant and polarizability are defined only in the formalism of quantum field theory. These quantities are expected to be good tool to the numerical analysis of nanosize materials. Basis set dependence of these quantities is explained with
Masato Senami, Akinori Fukushima
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High K LAON for gate dielectric application

2003 IEEE Conference on Electron Devices and Solid-State Circuits (IEEE Cat. No.03TH8668), 2004
A promising high k material, lanthanum aluminum oxynitride (LAON), with excellent material and electronic properties is reported. The LAON film has good thermal stability and CMOS process compatibility at 1000 C. The LAON material has a dielectric constant of above 20, bandgap of 6.6 eV. Well-behaved I-V and C-V were obtained for 80 A LAON on silicon.
null Hongwei Zhou, null Xiaoping Wang, null Bich-Yen Nguyen, R. Rai, L. Prabhu, null Jack Jiang, V. Kaushik, J. Scheaffer, M. Zavala, E. Duda, null Ran Liu, S. Zonner, B. Hradsky, P. Fejes, D. Theodore, G. Edwards, R. Gregory, R. Wang, null Hak Yam, null Jimmy Yu, null Huibin Lu, null Zhenghao Chen, null Xubing Lu, null Zhiguo Liu   +23 more
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Epitaxial high-k dielectrics on silicon

The Fifth International Conference on Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004., 2005
Aggressive reduction in the thickness of SiO2-based gate dielectrics in ULSI devices brings about a number offimdamental problems, the most critical ones being reduced dielectric reliability and exponentially increasing leakage (tunneling) current with decreasing oxide thickness.
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High-K Dielectrics: The Example of Pr2O3

2004
Praseodymium oxide is a rare earth metal oxide that has not been used for microelectronic applications so far. It has a dielectric constant in the range of 30–40 and thermodynamic estimates indicate its stability against critical reactions with silicon.
H. J. Osten, J. Dąbrowski, H.-J. Müssig, A. Fissel, V. Zavodinsky   +4 more
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Device Principles of High-K Dielectrics

2006
The growth of the semiconductor industr yi nt he last few decades has largely been driven by the growth of integrated circuits (IC) based on complementary metal– oxide–semiconductor (CMOS) technology. CMOS technology uses n-type and p-type field effect transistors (FETs) to produce digita ll ogi ce lements that are superior to other available logic ...
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Gate Dielectrics Integration for 2D Electronics: Challenges, Advances, and Outlook

Advanced Materials, 2023
Sijie Yang, Kailang Liu, Huiqiao Li
exaly