Results 241 to 250 of about 22,416,589 (293)

Dielectric Breakdown Characteristics of Stacked High-k Dielectrics

ECS Meeting Abstracts, 2009
Abstract not Available.
Byoung Hun Lee, Rino Choi
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High-k Dielectric Layers for Bioelectronic Applications

IEICE Transactions on Electronics, 2008
In many different bioelectronic applications silicon field-effect devices such as transistors or nanowires are used. Usually native or thermally grown silicon oxides serve as interfacing layer to the liquid. For an effective voltage to current conversion of the devices, the main demands for interface layers are low leakage current, low defect density ...
Dirk Borstlap, Jürgen Schubert, Willi Zander, Andreas Offenhäusser, Sven Ingebrandt   +4 more
openaire   +1 more source

Challenges of Ta2O5 as High-k Dielectric for Nanoscale DRAMs

2006 25th International Conference on Microelectronics, 2006
Abstract The present status, successes, challenges and future of Ta 2 O 5 , and mixed Ta 2 O 5 -based high- k layers as active component in storage capacitors of nanoscale DRAMs are discussed. The engineering of new Ta 2 O 5 -based dielectrics (doped Ta 2 O 5 and multicomponent Ta 2 O 5 -based high- k dielectrics) as well as of metal/high- k ...
Elena Atanassova, Albena Paskaleva
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High-k Dielectrics Integration Prospects

ECS Meeting Abstracts, 2006
Abstract not Available.
Stefan Kubicek, Sven Van Elshocht, Annelies Delabie, Kazuhiko Yamamoto, Stephan Beckx, Martine Claes, Nausikaa Van Hoornick, Dong Hwa Kwak, Sangjin Hyun, Aude Rothschild, Anabela Veloso, Kottantharayil Anil, Guilherme Lujan, Jorge Kittl, Anne Lauwers, Vidya Kaushik, Masaaki Niwa, Stefan De Gendt, M. Heyns, Malgorzata Jurczak, Serge Biesemans   +20 more
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Nanoanalysis of high-k dielectrics on semiconductors

2008 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2008
Replacement high-k dielectrics for Si(O,N) in MOSFETs undergo many physical and chemical changes during deposition and processing. The situation is even more complicated when a metal electrode is inserted into the gate stack. Investigation of such systems using advanced nanoanalytical techniques in the transmission electron microscope is discussed.
A. J. Craven, M. MacKenzie, D.W. McComb
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High k Gate Dielectrics

2003
Introduction The need for high-k gate dielectrics and materials requirement Deposition techniques ALCVD, MOCVD, PLD, MBE Characterization Physico-chemical characterization X-ray and electron spectroscopies Oxygen diffusion and thermal stability Defect characterization by ESR Band alignment determined by photo-injection Electrical characteristics Theory
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High-K Dielectrics: The Example of Pr2O3

2004
Praseodymium oxide is a rare earth metal oxide that has not been used for microelectronic applications so far. It has a dielectric constant in the range of 30–40 and thermodynamic estimates indicate its stability against critical reactions with silicon.
H. J. Osten, J. Dąbrowski, H.-J. Müssig, A. Fissel, V. Zavodinsky   +4 more
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High-k dielectrics and MOSFET characteristics

IEEE International Electron Devices Meeting 2003, 2004
High dielectric constant materials have been investigated for gate dielectric applications. In this paper, various techniques (e.g. optimization of interfacial layer, N and Si incorporation and optimized profiles, forming gas anneal) for improving channel mobility, EOT scaling and reliability of high-k devices is discussed.
J.C. Lee, H.J. Cho, C.S. Kang, S. Rhee, Y.H. Kim, R. Choi, C.Y. Kang, C. Choi, M. Abkar   +8 more
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High-K dielectrics for the gate stack

Journal of Applied Physics, 2006
This article gives an overview of recent developments in the search for the next-generation dielectric for the complementary metal-oxide semiconductor gate stack. After introducing the main quantities of interest, the paper concentrates on a figure of merit that connects two main properties of the gate stack, namely, the leakage current and the ...
Jean-Pierre Locquet, Chiara Marchiori, Maryline Sousa, Jean Fompeyrine, Jin Won Seo   +4 more
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Hafnium-based high-K dielectrics

IEEE VLSI-TSA International Symposium on VLSI Technology, 2005. (VLSI-TSA-Tech)., 2005
Hafnium-based high-K dielectrics such as HfO/sub 2/, HfON and HfSiON have attracted a great deal of attention because of their potential for successful integration into CMOS technology. However, channel mobility degradation, charge trapping and reliability are major concerns.
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