Results 241 to 250 of about 57,323 (293)

High-K gate dielectrics

SPIE Proceedings, 1999
High-K dielectric thin films have been investigated as alternative gate dielectrics. Our results suggest that single-layer sputtered ZrO 2 or HfO 2 thin films deposited directly on Si substrate, without the use of a barrier layer, exhibit excellent electrical and reliability characteristics.
Wen-Jie Qi, Byoung H. Lee, Renee Nieh, LaeGu Kang, YongJoo Jeon, Katsu Onishi, Jack C. Lee   +6 more
openaire   +1 more source

Dielectric Breakdown Characteristics of Stacked High-k Dielectrics

ECS Transactions, 2009
Dielectric breakdown characteristics of high-k dielectric have been intensively studied to develop a lifetime extrapolation model for device with metal/high-k gate stacks. Majority of prior works treated the high-k dielectric as a single layer dielectric like thermally grown SiO2 while the actual structure of high-k dielectric consists of two layers ...
Byoung Hun Lee, Rino Choi
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Trapping in high-k dielectrics

Applied Physics Letters, 2010
In this paper, an analytical model of trapping in high-k dielectrics is proposed. It starts from the general rate equation and relies on the hypothesis that the density of states involved in the capture mechanism follows a Fermi-like distribution. Thus, the energy depth of the trap level respect to the Fermi level is explicited in the model.
RAO, ROSARIO, Riccardo Simoncini, IRRERA, Fernanda   +2 more
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High-k Dielectrics Integration Prospects

ECS Meeting Abstracts, 2006
Abstract not Available.
Stefan Kubicek, Sven Van Elshocht, Annelies Delabie, Kazuhiko Yamamoto, Stephan Beckx, Martine Claes, Nausikaa Van Hoornick, Dong Hwa Kwak, Sangjin Hyun, Aude Rothschild, Anabela Veloso, Kottantharayil Anil, Guilherme Lujan, Jorge Kittl, Anne Lauwers, Vidya Kaushik, Masaaki Niwa, Stefan De Gendt, M. Heyns, Malgorzata Jurczak, Serge Biesemans   +20 more
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Numerical Study of the VDMOS with an Integrated High-K Gate Dielectric and High-K Dielectric Trench

2021 China Semiconductor Technology International Conference (CSTIC), 2021
The VDMOS with an integrated high-k gate dielectric and high - k dielectric trench is investigated in this paper. The high-k (HK) dielectric is applied both for the gate dielectric and trench, which improves the performance without increasing the process complexity.
Zhenyu Zhang, Jiafei Yao, Yufeng Guo, YongChen He, JinCheng Liu, Mingyuan Gu, Qicong Liang   +6 more
openaire   +1 more source

Hafnium-based high-K dielectrics

IEEE VLSI-TSA International Symposium on VLSI Technology, 2005. (VLSI-TSA-Tech)., 2005
Hafnium-based high-K dielectrics such as HfO/sub 2/, HfON and HfSiON have attracted a great deal of attention because of their potential for successful integration into CMOS technology. However, channel mobility degradation, charge trapping and reliability are major concerns.
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Reliability characteristics of high-k dielectrics

Microelectronics Reliability, 2004
Abstract In this paper, recent results of Weibull slopes, area scaling factors, and breakdown behaviors observed for both soft breakdown and hard breakdown are discussed. These results would help to shed light on the breakdown mechanism of HfO 2 gate dielectrics.
Young-Hee Kim, Jack C Lee
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High k Gate Dielectrics

2003
Introduction The need for high-k gate dielectrics and materials requirement Deposition techniques ALCVD, MOCVD, PLD, MBE Characterization Physico-chemical characterization X-ray and electron spectroscopies Oxygen diffusion and thermal stability Defect characterization by ESR Band alignment determined by photo-injection Electrical characteristics Theory
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Hf-based high-K dielectrics

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765), 2003
We report recent results on the effects of high-temperature forming gas and deuterium anneals on performance and reliability characteristics and the effects of AC and DC stress on bias-temperature instability and time-dependent dielectrics breakdown.
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Modeling of high-k dielectric nanocomposites

Acta Mechanica, 2014
In this paper, based on recent research on BaTiO3 (BT) nanoparticles, BT/P(VDF-HFP) nanocomposites, frequency-dependent dielectric properties of such a material system with high energy density have been investigated as functions of the volume fraction of the nanoparticles at room temperature by several theoretical models.
M. E. Hossain, S. Y. Liu, S. O’Brien, J. Li   +3 more
openaire   +1 more source