Results 211 to 220 of about 5,561 (264)

High-K gate dielectrics

SPIE Proceedings, 1999
High-K dielectric thin films have been investigated as alternative gate dielectrics. Our results suggest that single-layer sputtered ZrO 2 or HfO 2 thin films deposited directly on Si substrate, without the use of a barrier layer, exhibit excellent electrical and reliability characteristics.
Wen-Jie Qi, Byoung H. Lee, Renee Nieh, LaeGu Kang, YongJoo Jeon, Katsu Onishi, Jack C. Lee   +6 more
openaire   +1 more source

Dielectric Breakdown Characteristics of Stacked High-k Dielectrics

ECS Meeting Abstracts, 2009
Abstract not Available.
Byoung Hun Lee, Rino Choi
openaire   +2 more sources

High-k Dielectric Layers for Bioelectronic Applications

IEICE Transactions on Electronics, 2008
In many different bioelectronic applications silicon field-effect devices such as transistors or nanowires are used. Usually native or thermally grown silicon oxides serve as interfacing layer to the liquid. For an effective voltage to current conversion of the devices, the main demands for interface layers are low leakage current, low defect density ...
Dirk Borstlap, Jürgen Schubert, Willi Zander, Andreas Offenhäusser, Sven Ingebrandt   +4 more
openaire   +1 more source

Challenges of Ta2O5 as High-k Dielectric for Nanoscale DRAMs

2006 25th International Conference on Microelectronics, 2006
Abstract The present status, successes, challenges and future of Ta 2 O 5 , and mixed Ta 2 O 5 -based high- k layers as active component in storage capacitors of nanoscale DRAMs are discussed. The engineering of new Ta 2 O 5 -based dielectrics (doped Ta 2 O 5 and multicomponent Ta 2 O 5 -based high- k dielectrics) as well as of metal/high- k ...
Elena Atanassova, Albena Paskaleva
openaire   +1 more source

Selective Removal of High-k Dielectrics

ECS Transactions, 2011
Continuous downscaling of integrated circuits brought an end to the era of SiO2. In gate dielectrics, it is being replaced by materials with high dielectric constant, so-called high-k dielectrics. One of the challenges in the integration of the high-k material is removal of those materials selectively over the substrate.
Denis Shamiryan, Vasile Paraschiv
openaire   +1 more source

Modeling of high-k dielectric nanocomposites

Acta Mechanica, 2014
In this paper, based on recent research on BaTiO3 (BT) nanoparticles, BT/P(VDF-HFP) nanocomposites, frequency-dependent dielectric properties of such a material system with high energy density have been investigated as functions of the volume fraction of the nanoparticles at room temperature by several theoretical models.
M. E. Hossain, S. Y. Liu, S. O’Brien, J. Li   +3 more
openaire   +1 more source

High-k Dielectrics Integration Prospects

ECS Meeting Abstracts, 2006
Abstract not Available.
Stefan Kubicek, Sven Van Elshocht, Annelies Delabie, Kazuhiko Yamamoto, Stephan Beckx, Martine Claes, Nausikaa Van Hoornick, Dong Hwa Kwak, Sangjin Hyun, Aude Rothschild, Anabela Veloso, Kottantharayil Anil, Guilherme Lujan, Jorge Kittl, Anne Lauwers, Vidya Kaushik, Masaaki Niwa, Stefan De Gendt, M. Heyns, Malgorzata Jurczak, Serge Biesemans   +20 more
openaire   +1 more source

Nanoanalysis of high-k dielectrics on semiconductors

2008 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2008
Replacement high-k dielectrics for Si(O,N) in MOSFETs undergo many physical and chemical changes during deposition and processing. The situation is even more complicated when a metal electrode is inserted into the gate stack. Investigation of such systems using advanced nanoanalytical techniques in the transmission electron microscope is discussed.
A. J. Craven, M. MacKenzie, D.W. McComb
openaire   +1 more source

High-k dielectrics and MOSFET characteristics

IEEE International Electron Devices Meeting 2003, 2004
High dielectric constant materials have been investigated for gate dielectric applications. In this paper, various techniques (e.g. optimization of interfacial layer, N and Si incorporation and optimized profiles, forming gas anneal) for improving channel mobility, EOT scaling and reliability of high-k devices is discussed.
J.C. Lee, H.J. Cho, C.S. Kang, S. Rhee, Y.H. Kim, R. Choi, C.Y. Kang, C. Choi, M. Abkar   +8 more
openaire   +1 more source

High k Gate Dielectrics

2003
Introduction The need for high-k gate dielectrics and materials requirement Deposition techniques ALCVD, MOCVD, PLD, MBE Characterization Physico-chemical characterization X-ray and electron spectroscopies Oxygen diffusion and thermal stability Defect characterization by ESR Band alignment determined by photo-injection Electrical characteristics Theory
openaire   +1 more source