Results 161 to 170 of about 8,906 (184)

Analysis of property of HSQ in electron beam lithography

SPIE Proceedings, 2007
Hydrogen silsesquioxane (HSQ) is a kind of inorganic negative-tone resist for electron beam lithography with high pattern resolution of about 5 nm. It is a kind of promising resist used in fabrication of nanostructures such as transmission grating (TG), dots array, and chiral structures. But the poor sensitivity limits the extensive application of HSQ.
Min Zhao, XiaoLi Zhu, Baoqin Chen, Jiebin Niu, Ming Liu, Changqing Xie   +5 more
openaire   +1 more source

Supercritical drying for high aspect-ratio HSQ nano-structures

Microelectronic Engineering, 2007
The benefits of supercritical resist drying (SRD) technique using carbon dioxide (CO"2) are investigated with respect to the resolution of dense patterns and the aspect ratio (AR) of nano-structures in rather thick HSQ layers. For double lines separated by a distance of 50nm the maximum achievable AR is trebled using SRD processes compared to ...
T. Wahlbrink, D. Küpper, J. Bolten, M. Möller, M.C. Lemme, H. Kurz   +5 more
openaire   +1 more source

Planarization properties of hydrogen silsesquioxane (HSQ) influence on CMP

Microelectronic Engineering, 2000
Abstract Low dielectric constant materials are now required as intermetallic dielectrics to reduce RC delay in advanced technologies. Hydrogen silsesquioxane (HSQ) is a spin-on dielectric with a dielectric constant around 3. Local planarization of HSQ and its impact on the global planarization due to CMP process was studied.
C Maddalon, K Barla, E Denis, E Lous, E Perrin, S Lis, C Lair, E Dehan   +7 more
openaire   +1 more source

Resist thickness effects on ultra thin HSQ patterning capabilities

Microelectronic Engineering, 2009
This work focuses on the effect of resist thickness on resolution performance of hydrogen silsesquioxane (HSQ) electron beam resist. Contrast, sensitivity, surface morphology and resolution of the formed structures were found to be substantially dependent on film thickness.
V. Sidorkin, A. Grigorescu, H. Salemink, E. van der Drift   +3 more
openaire   +1 more source

Proton beam written hydrogen silsesquioxane (HSQ) nanostructures for Nickel electroplating

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2009
Abstract Hydrogen silsesquioxane (HSQ) behaves as a negative resist under MeV proton beam exposure. HSQ is a high-resolution resist suitable for production of tall ( 1.5 μ m ) high-aspect-ratio nanostructures with dimensions down to 22 nm. High-aspect-ratio HSQ structures are required in many applications, e.g.
Gorelick, S., Zhang, F., Shao, P.G., van Kan, J.A., Whitlow, H.J., Watt, F.   +5 more
openaire   +1 more source

Chemical-mechanical polishing of low dielectric constant poly(silsesquioxane): HSQ

Journal of Polymer Research, 1999
In this study, the chemical-mechanical polishing (CMP) characteristics of the low dielectric constant poly(silsesquioxane) (HSQ) were investigated. CMP behavior was studied using different kinds of slurries, additives, and pads. The slurriesused included SiO2 based slurry (SS-25), ZrO2 based slurry (A-1), and Al2O3 based slurry (WA400).
Wen-Chang Chen, Cheng-Tyng Yen
openaire   +1 more source

Repairing plasma-damaged low-k HSQ films with trimethylchlorosilane treatment

Materials Science and Engineering: B, 2006
Abstract Low-density materials, such as the commercially available hydrogen silsesquioxane (HSQ) offer a low dielectric constant. Thus HSQ with a low value of k (∼2.85) can be spin-coated if the density of Si H bonding is maintained at a high level and the formation of OH bonds and absorption or creation of water in the film is minimized.
SINGH, SUNIL KUMAR, KUMBHAR, ALKA A, DUSANE, RO   +2 more
openaire   +2 more sources

Direct stamp fabrication for NIL and hot embossing using HSQ

Microelectronic Engineering, 2007
Commonly stamps or masters for nanoimprinting are made by electron beam lithography (EBL) and subsequent reactive ion etching into silicon. Here we present a single step procedure to prepare stamps suitable for nanoimprinting and hot embossing. The stamps are directly fabricated in HSQ (hydrogen silsequioxane), a negative EBL resist, which has a high ...
N. Gadegaard, D. McCloy
openaire   +1 more source

Sub-10nm resolution after lift-off using HSQ/PMMA double layer resist

Microelectronic Engineering, 2013
Hydrogen silesquioxan (HSQ) is a well-investigated negative tone inorganic resist [1,2] which is known for its capabilities for high resolution electron beam lithography (EBL) and its stability against dry etching [3]. In this paper, we introduce a process to create dense structures by EBL utilizing a layer of poly-methyl-methacrylate (PMMA) as ...
Rommel, M., Nilsson, B., Jedrasik, P., Bonanni, V., Dmitriev, A., Weis, J.   +5 more
openaire   +2 more sources

Supercritical drying process for high aspect-ratio HSQ nano-structures

Microelectronic Engineering, 2006
Supercritical resist drying allows the fabrication of high aspect-ratio (AR) resist patterns. The potential of this drying technique to increase the maximum achievable AR and the resolution of the overall lithographic process is analyzed for hydrogen silsesquioxane (HSQ).
T. Wahlbrink, Daniel Küpper, Y.M. Georgiev, J. Bolten, M. Möller, David Küpper, M.C. Lemme, H. Kurz   +7 more
openaire   +1 more source