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Ideal Graphene/Silicon Schottky Junction Diodes [PDF]

Nano Letters, 2014
The proper understanding of semiconductor devices begins at the metal-semiconductor interface. The metal/semiconductor interface itself can also be an important device, as Schottky junctions often forms when the doping in the semiconductors is low. Here, we extend the analysis of metal-silicon Schottky junctions by using graphene, an atomically thin ...
Sinha, Dhiraj, Lee, Ji Ung
openaire   +5 more sources

Experimentally Validated Modelling of a Base-Excited Piezoelectric Vibration Energy Harvester Connected to a Full Wave Rectified Load [PDF]

Sensors
Practical applications of piezoelectric vibration energy harvesting systems are required to produce a stable DC output through the nonlinear process of AC-DC rectification.
Philip Bonello, Maher Alalwan
doaj   +2 more sources

A hybrid mode semi circular shaped frequency reconfigurable antenna for multiband communication [PDF]

Scientific Reports
This paper presents a hybrid mode semi-circular-shaped frequency reconfigurable antenna for ultra-wideband (UWB) and multiband communication. The proposed antenna is designed on a FR-4 substrate with a thickness of 1.6 mm, a relative permittivity of 4.2,
Kanniyappan Vinayagam, Rajesh Natarajan
doaj   +2 more sources

Enabling the Fabrication of Complex Soft Iontronics Using Multi‐Material 3D Extrusion Printing [PDF]

Advanced Science
Iontronics can improve soft robotics, including wearable devices and environmental sensors, by replacing rigid electronics with viscoelastic materials that mimic biological tissue.
Trevor J. Kalkus, Tamara V. Unterreiner, Målin Schmidt, Laura D. Wächter, Christina R. Schmitt, Ankit Mishra, Christine Selhuber‐Unkel   +6 more
doaj   +2 more sources

Dirac-source diode with sub-unity ideality factor [PDF]

Nature Communications, 2021
Abstract An increase in power consumption necessitates a low-power circuit technology to extend Moore’s law. Low-power transistors, such as tunnel field-effect transistors (TFETs), negative-capacitance field-effect transistors (NC-FETs), and Dirac-source field-effect transistors (DS-FETs), have been realised to ...
Gyuho Myeong, Wongil Shin, Kyunghwan Sung, Seungho Kim, Hongsik Lim, Boram Kim, Taehyeok Jin, Jihoon Park, Taehun Lee, Michael S. Fuhrer, Kenji Watanabe, Takashi Taniguchi, Fei Liu, Sungjae Cho   +13 more
openaire   +4 more sources

Thermodynamic limits and performance optimization of nighttime thermoradiative energy conversion systems with non-idealities

Case Studies in Thermal Engineering, 2023
To address the challenge of the growing global energy crisis and the greenhouse effect, employing the thermoradiative effect of photodiodes to harvest radiative energy from colder outer space is considered a promising approach for direct nighttime ...
Xin Zhang, Ao Ding, Hongzhe Sun, Ehsanur Rahman   +3 more
doaj   +1 more source

Simulation of a Hybrid Thermoelectric-Magnetocaloric Refrigerator with a Magnetocaloric Material Having a First-Order Transition

Magnetism, 2022
A simple hybrid thermoelectric-magnetocaloric (TE-MC) system is analytically and numerically simulated using the working parameters of commercial Peltier cells and the properties of a material with a first-order and low-hysteresis magneto-structural ...
Elías Palacios, Jesús Francisco Beltrán, Ramón Burriel   +2 more
doaj   +1 more source

Hardware-Intrinsic Physical Unclonable Functions by Harnessing Nonlinear Conductance Variation in Oxide Semiconductor-Based Diode

Nanomaterials, 2023
With the advancement of the Internet of Things (IoT), numerous electronic devices are connected to each other and exchange a vast amount of data via the Internet.
Namju Kim, Seung-Bae Jeon, Byung Chul Jang   +2 more
doaj   +1 more source

Designs of Branch-Line Couplers by Considering the Parasitic Effects of P-I-N Diodes

IEEE Access, 2020
Branch-line couplers (BLCs) are commonly used in the wireless systems. To achieve reconfigurable applications, switchable BLCs with p-i-n diodes can be used.
Pu-Hua Deng, Ming-Wei Li, Wei-Ting Chen, Chen-Hsiang Lin, Chieh-Hung Lu, Ren-Fu Tsai, Kai-Hung Chen   +6 more
doaj   +1 more source

Schottky barrier inhomogeneities at the interface of different epitaxial layer thicknesses of n-GaAs/Ti/Au/Si: Al0.33Ga0.67As

Heliyon, 2020
The effects of an epitaxial layer on the rectifying behavior of n-GaAs/Ti/Au/Si:Al0.33Ga0.67 As diodes have been examined through the inhomogeneity model on n+-GaAs substrate with orientation.
Noorah Ahmed Al-Ahmadi
doaj   +1 more source