Results 11 to 20 of about 85,220 (297)
Counter-Doped Multizone Junction Termination Extension Structures in Vertical GaN Diodes
IEEE Journal of the Electron Devices Society, 2019 GaN is an attractive wide bandgap semiconductor for power applications, owing to its superior electrical properties, such as high critical electric field and saturation drift velocity.
Mohammed Shurrab +2 more
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IET Power Electronics, 2023 This study proposes a comprehensive analysis of a novel non‐isolated step‐up converter with continuous input current and common ground. The proposed topology provides high voltage gain besides insignificant voltage and current stress across switches and ...
Reza Asgarnia, Ebrahim Afjei
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RF Characterization of NiO and TiO2 Based Metal-Insulator-Metal (MIM) Diodes on Flexible Substrates
IEEE Access, 2018 This paper presents the fabrication and characterization of metal-insulator-metal (MIM) diodes on flexible substrates for RF and microwave circuit applications.
Amanpreet Kaur, Premjeet Chahal
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Theoretical and Experimental Studies of Schottky Diodes That Use Aligned Arrays of Single Walled Carbon Nanotubes [PDF]
, 2010 We present theoretical and experimental studies of Schottky diodes that use aligned arrays of single walled carbon nanotubes. A simple physical model, taking into account the basic physics of current rectification, can adequately describe the single-tube
A. A. Pesetski +40 more
core +2 more sources
Phase cascade lattice rectifier array: an exactly solvable nonlinear network circuit [PDF]
, 2018 An exact analysis of a 2-D lattice network consisting of N × N sites with rectifier and AC source elements with controllable phases reveals a method for generating ripple-free DC power without the use of any filtering circuit elements.
Chen, J. +6 more
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Ideal GaP surface-barrier diodes
Electronics Letters, 1971 The properties of GaP diodes with metal?semiconductor (m.s.) potential barriers are described. The structure was manufactured by the chemical deposition of metal (gold or metal) on the n GaP surface. The properties of these m.s. structures (forward current/voltage and photocurrent/photon-energy characteristics and typical parameters) are extremely ...
YU.A. Goldberg +2 more
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Nanomaterials, 2022 Hybrid nanostructures have a great potential to improve the overall properties of photonic devices. In the present study, silver nanoparticles (AgNPs) were infiltrated into nanostructured porous silicon (PSi) layers, aiming at enhancing the ...
Rehab Ramadan, Raúl J. Martín-Palma
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Comparison of an open-hardware electroencephalography amplifier with medical grade device in brain-computer interface applications [PDF]
, 2016 Brain-computer interfaces (BCI) are promising communication devices between humans and machines. BCI based on non-invasive neuroimaging techniques such as electroencephalography (EEG) have many applications , however the dissemination of the technology ...
Frey, Jérémy
core +3 more sources
The Development of Frequency Multipliers for Terahertz Remote Sensing System
Remote Sensing, 2022 This paper summarizes the development of novel Schottky-diode-based terahertz frequency multipliers. The basic structure and manufacturing process of planar Schottky barrier diodes (SBDs) are reviewed, along with other diode structures that have been ...
Yong Zhang +7 more
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Near-ideal platinum-GaN Schottky diodes
Electronics Letters, 1996 Fabrication and characterisation of nearly ideal Pt/n-GaN Schottky barrier diodes are described. The n-GaN employed was grown by the reactive molecular beam epitaxy method. The capacitance/voltage (C/V) characteristics indicate marginal trap density in the semiconductor, and the current/voltage (I/V) characteristics give an ideality factor very close ...
S.N. Mohammad +6 more
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