Results 241 to 250 of about 85,220 (297)

Polarization-diversity backscatter communication based on programmable information metasurface. [PDF]

iScience
Luo G, Ma X, Han J, Zhu L, Li R, Liu H, Li L.   +6 more
europepmc   +1 more source

Electrical performance of a nanocomposite diode based on palladium nanoparticles- and polyethyleneimine functionalized nitrogen-doped graphene quantum dots. [PDF]

Sci Rep
Dikicioğlu E, Efkere Hİ, Yıldız M, Orhan E.   +3 more
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Dynamical analysis of linear passive networks with ideal diodes

, 2000
Camlibel, M.K., Heemels, W.P.M.H., Schumacher, J.M.   +2 more
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Dirac-source diode with sub-unity ideality factor

Dirac-source diode with sub-unity ideality factor
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Photovoltaic effect in ideal carbon nanotube diodes

Applied Physics Letters, 2005
We demonstrate that individual single-walled carbon nanotubes (SWNTs) can form ideal p-n junction diodes. An ideal behavior is the theoretical limit of performance for any diode, a highly sought after goal in all electronic materials development. We further elaborate on their properties by examining photovoltaic effects, an application where its ...
Ji Ung Lee
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GaAs Schottky diodes with near-ideal characteristics

Proceedings of the IEEE, 1971
The I-V characteristics of some GaAs Schottky-barrier IMPATT diodes are found to be nearly ideal at operating temperatures (∼200°C). Fabricated on epitaxial n-type substrate with platinum contacts, the diodes use a truncated cone shape to avoid soft breakdown.
D.J. Coleman, J.C. Irvin, S.M. Sze
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Planar Gunn diodes with ideal contact geometry

Proceedings of the IEEE, 1973
Planar Gunn diodes made from epitazial GaAs on insulating substrates having a contact geometry which results in an ideal electric field distribution are described. The current density is uniform along the diodes, and no high-field regions appear at the contacts. The lengths of the Gunn diodes varied from over 1000 to less than 100 µ.
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Ideal Schottky diodes on passivated silicon

Physical Review Letters, 1992
Because of the complicated electronic and metallurgical properties of the metal-semiconductor interface, there is much controversy about the theoretical interpretation of experimental results on Schottky barrier heights. We present a new approch of barrier height measurements on a prototypical clean, abrupt and noninteracting system consisting of ...
, Wittmer, , Freeouf
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The design of ideal diode

Anti-counterfeiting, Security, and Identification, 2012
This article describes a P-channel MOSFET ideal diode circuit. The P-channel MOSFET on-resistance that connects the input and output is only ΙΟΟmΩ in the circuit. In order to ensure the drop voltage from the input to the output is equal to V1(when I1 = 2A, V1 = 256mV), the circuit uses a high-gain amplifier to adjust the gate voltage of the P-channel ...
Dabing Ma, Jianli Xing
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