Results 251 to 260 of about 85,220 (297)
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Technique to evaluate the diode ideality factor of light-emitting diodes
Applied Physics Letters, 2010A photoluminescence technique has been demonstrated on InGaN/GaN light-emitting diodes (LEDs) to evaluate their diode ideality factors. Selectively excited active regions produce potential differences between two contact terminals in addition to luminescence, from which the rate of recombination and terminal voltage have been related. Obtained ideality
Hisashi Masui +2 more
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Heterojunction diodes nGaAs/pSi with ideal characteristics
Applied Surface Science, 1996Heterojunction (HJ) diodes nGaAs/pSi have been fabricated from GaAs-on-Si heterostructures grown by molecular beam epitaxy and exhibited surprisingly ideal characteristics, despite the high density of misfit dislocations in the GaAs/Si interface. For n p 10 16 cm -3 an ideality factor, n, of 1.06 was determined from I-V measurements at 300 K while an
E. Aperathitis +5 more
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Diode ideality factor in modern light-emitting diodes
Semiconductor Science and Technology, 2011The diode ideality factor has been subjected to theoretical discussions from the viewpoint of light-emitting diodes (LEDs). As radiative recombination in LEDs is incongruent with the Sah–Noyce–Shockley (SNS) analysis, the SNS recombination plane was replaced with carrier confinement structures of modern LEDs, e.g., quantum wells (QWs).
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Ideal nanocrystal quantum dots for light-emitting diodes
Organic and Hybrid Light Emitting Materials and Devices XXV, 2021Semiconductor nanocrystal core/shell quantum dots (QDs) have successfully extended their original fundamental research into many practical applications. But core/shell QDs may still not satisfying enough in practical applications because of the existence of photoblinking, multi-exponential PL decay behavior, and Forster resonance energy transfer (FRET)
Lei Wang +3 more
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Clamp voltage and ideality factor in laser diodes
Microelectronics Reliability, 2015Abstract A recent model for laser diodes was applied to the decomposition of the experimental characteristics of several laser diodes into their fundamental components. This pointed out a problem involving the ideality factor and the clamp voltage.
VANZI, MASSIMO +3 more
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Ideality factor and threshold voltage in laser diodes
2014 Third Mediterranean Photonics Conference, 2014The non-unitary ideality factor of a MQW laser diode and its measurable threshold voltage are shown to be a puzzling question. The analysis is based on the predictions of the canonical rate equations, once they are translated into the device language, that replaces theoretical quantities as quasi-Fermi levels and carrier densities with measurable ones ...
VANZI, MASSIMO +2 more
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Different Types of Diodes, Ideal and Real Diodes, Switching Diodes, Abrupt and Graded Junctions
2015In this chapter, different types of specific purpose diodes viz. crystal diode, thermal diode, constant current diode, PIN diode, Schottky diode, gold-doped diode, super barrier diode, varicap diode, Esaki diode, laser diode, TVS diode and snap-off diode etc. are introduced besides many others.
K. M. Gupta, Nishu Gupta
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Parameter extraction in non-ideal thermionic emission diodes
Applied Surface Science, 1999Abstract Novel and simple, on-site extraction method of parameters; the ideality factor, series resistance, leakage resistance, and saturation current, from both the forward and the reverse current–voltage characteristics and their derivatives of non-ideal thermionic emission diodes is presented. The results of successful application of the method on
J.I Lee +3 more
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On the barrier lowering and ideality factor of ideal Al/GaAs Schottky diodes
Solid-State Electronics, 1991Abstract Factors contributing to Schottky barrier lowering in ideal Al/GaAs Schottky diodes are discussed both theoretically and experimentally. The diodes used in this study were grown by molecular beam epitaxy with in situ Al deposition. Two different GaAs surface reconstructions (As-stabilized and Ga-rich) were used.
D. Mui, S. Strite, H. Morkoç
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On the Ideality Factor of Schottky Diodes at Low Temperatures
physica status solidi (a), 1985Abstract is not available.
Chandra, MM, Prasad, M
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