Results 261 to 270 of about 85,220 (297)

Stability of ideal thyristor and diode switching circuits

IEEE Transactions on Circuits and Systems I: Fundamental Theory and Applications, 1995
This paper analyzes the stability of a general RLC circuit with ideal thyristors or diodes and periodic sources. Applications include high power thyristor controlled reactor and bridge rectifier circuits. The periodic steady states of the circuit are analyzed using a Poincare map and transversality conditions are given to guarantee the smoothness of ...
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A nearly ideal phosphor-converted white light-emitting diode

Applied Physics Letters, 2008
A phosphor-converted light-emitting diode was obtained with nearly ideal blue-to-white conversion loss of only 1%. This is achieved using internal reflection to steer phosphor emission away from lossy surfaces, a reflector material with high reflectivity, and a remotely located organic phosphor having (1) unity quantum efficiency (ηq), (2) homogeneous ...
Steven C. Allen, Andrew J. Steckl
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Diamond Schottky diodes with ideality factors close to 1

Applied Physics Letters, 2014
The stabilization by vacuum annealing of tungsten carbide/p-diamond Schottky barrier diodes (SBDs) has been investigated. The Schottky barrier height (ϕB) and ideality factor (n), at high temperature, were consistently estimated by employing a vertical SBD structure.
A. Fiori, T. Teraji, Y. Koide
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Silicon diffused diodes with nearly ideal current-voltage characteristics

Technical Physics, 1998
It is shown that nearly ideal current-voltage characteristics (I-V curves) can be obtained for small-area, shallow silicon diffused p-n junctions irradiated with 60Co gamma rays in the dose range 103–5×105 Gy. In the irradiated diodes the current transfer mechanism is observed to shift from generation-recombination to diffusion.
N. S. Boltovets, K. A. Ismailov, R. V. Konakova, M. B. Tagaev   +3 more
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A new Richardson plot for non-ideal schottky diodes

Thin Solid Films, 1988
Abstract The influence of operating temperature on the I–V and C-V characteristics of Al/n-GaAs Schottky diodes was studied. Diode parameters such as the ideality factor n and barrier height ΦBn were found to be dependent on the temperature. For these diodes the usual Richardson plot log (I s /ST 2 ) vs.
A.S. Bhuiyan, A. Martinez, D. Esteve
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Generalized model of an ideal diode

Electromagnetic Waves and Electronic Systems
To simplify the calculation of nonlinear circuits, a piecewise linear approximation of the current-voltage characteristic of nonlinear elements is used. The nonlinear elements are replaced by equivalent circuits containing ideal diodes in this case.
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Nearly ideal unguarded vanadium-silicide Schottky-barrier diodes

IEEE Transactions on Electron Devices, 1986
Nearly ideal VLSI unguarded Schottky-barrier diodes were made using a VSi 2 /nSi junction. The reverse-current leakage of these diodes is fully explained in terms of electric-field enhancement present near the diode edges. The values of the diode quality factor were nearly equal to unity and were identical to those of guarded diodes built on the same ...
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Temperature-Dependent Properties of Nearly Ideal ZnO Schottky Diodes

IEEE Transactions on Electron Devices, 2009
The current-voltage characteristics of low-ideality factor (1.09 at 300 K) ZnO Schottky diodes were investigated over the temperature range of 40-423 K. Planar geometry devices were fabricated on the Zn-polar face of a low carrier concentration (n = 1 times 1014 cm-3) hydrothermally grown bulk ZnO single crystal wafer.
Martin W. Allen, Xiaojun Weng, Joan M. Redwing, Karthik Sarpatwari, Suzanne E. Mohney, Holger von Wenckstern, Marius Grundmann, Steven M. Durbin   +7 more
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4.5 kV 4H-SiC diodes with ideal forward characteristic

Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216), 2002
4H-SiC diodes with 4.5 kV blocking and epitaxially grown anode emitters show near theoretical forward voltages of 3.08 V at 100 A/cm/sup 2/ and 4.10 V at 1000 A/cm/sup 2/ at RT (2.96 V and 4.15 V at 125/spl deg/C), while diodes with implanted emitters show 3.5-3.8 V at 100 A/cm/sup 2/ with -4 mV/K.
H. Lendenmann, A. Mukhitdinov, F. Dahlquist, H. Bleichner, M. Irwin, R. Soderholm   +5 more
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Diode ideality factor for MOSFETs characterization of dose effect

Radiation Effects and Defects in Solids, 1996
Abstract An innovative method for device characterization is developed to qualify radiation effects. A study of radiation induced effects on carrier transport phenomena has been carried out on the body-drain junction of power HEXFETs. A large increase of the recombination current is pointed out.
E. Bendada, M. De La Bardonnie, P. Mialhe, J.-P. Charles   +3 more
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