Results 1 to 10 of about 30,364 (194)

Analytical model for interface recombination limited ideality factors in p-i-n perovskite solar cells

open access: yesAPL Energy
Perovskite solar cells have emerged as a promising thin-film solar cell technology. However, compared to state-of-the-art photovoltaic technologies, perovskite solar cells still suffer from large nonradiative recombination losses. A dominant nonradiative
Oskar J. Sandberg   +4 more
doaj   +1 more source

Photovoltaic Properties of Doped Zinc Sulfide/n-Si Heterojunction Thin Films

open access: yesInternational Journal of Electrochemical Science, 2018
In this work, the current-voltage (I-V) characteristic curve of heterojunction solar cells based on pure ZnS and doped ZnS solid films have been studied.
Mahdi H. Suhail   +3 more
doaj   +1 more source

Effect of Annealing Atmosphere on the Diode Behaviour of ZnO/Si Heterojunction

open access: yesElektronika ir Elektrotechnika, 2021
The effect of thermal annealing atmosphere on the electrical characteristics of Zinc oxide (ZnO) nanorods/p-Silicon (Si) diodes is investigated. ZnO nanorods are grown by low-temperature aqueous solution growth method and annealed in Nitrogen and Oxygen ...
Sadia Muniza Faraz   +5 more
doaj   +1 more source

Modeling the gas-particle partitioning of secondary organic aerosol: the importance of liquid-liquid phase separation [PDF]

open access: yes, 2012
The partitioning of semivolatile organic compounds between the gas phase and aerosol particles is an important source of secondary organic aerosol (SOA).
Seinfeld, J. H., Zuend, A.
core   +3 more sources

Barrier inhomogeneities of Al/p-In2Te3 thin film Schottky diodes [PDF]

open access: yes, 2011
The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of p-In2Te3/Al thin films Schottky diodes papered by Flash Evaporation technique were measured in the temperature range 303-335 K have been interpreted on the basis of the assumption
Desai, M.S.   +6 more
core  

Extraction of the electrical parameters of the Au/InSb/InP Schottky diode in the temperature range (300 K- 425 K)

open access: yesInternational Journal of Energetica, 2020
In this work, we have presented a theoretical study of  Au/InSb/InP Schottky diode based on current-voltage (I-V) measurement in the temperature range ( 300 K- 425 K).
Ali Sadoun, Imad Kemerchou
doaj  

Performance Evaluation of Analytical Methods for Parameters Extraction of Photovoltaic Generators

open access: yesEnergies, 2020
This paper presents a succinct exploration of several analytical methods for extracting the parameters of the single-diode model (SDM) of a photovoltaic (PV) module under standard test conditions (STC). The paper investigates six methods and presents the
Nader Anani, Haider Ibrahim
doaj   +1 more source

Observation of surface charge screening and Fermi level pinning on a synthetic, boron-doped diamond [PDF]

open access: yes, 1993
Spectroscopic current-voltage (I-V) curves taken with a scanning tunneling microscope on a synthetic, boron-doped diamond single crystal indicate that the diamond, boiled in acid and baked to 500 °C in vacuum, does not exhibit ideal Schottky ...
Baker, Shenda M.   +2 more
core   +1 more source

Study of Predicting the Performance of I-V Curves Through Photoluminescence Spectral Characteristics

open access: yesIEEE Photonics Journal
Quality of GaN LEDs is closely related to the defects in quantum wells. Effectively evaluating the performance of LEDs is a key step in mass production. Electrical characterization testing is very effective for characterizing the performance of LEDs, and
Zhikun Hong   +3 more
doaj   +1 more source

Thermal characteristics of InGaN-based green micro-LEDs

open access: yesAIP Advances, 2021
We have investigated the thermal characteristics of InGaN-based green micro-light-emitting diodes (micro-LEDs) without the passivation layer in a wide junction temperature range of 298–453 K.
Yang Feng   +3 more
doaj   +1 more source

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