HVDC Transmission Systems based Multi-level Voltage Source Converters for Iraqi Super Grid [PDF]
Engineering and Technology Journal, 2014 High Voltage Direct Current Transmission (HVDC) with Voltage Source Converter (VSC) technology provides substantial technical and economical advantages for different applications compared to conventional HVDC transmission systems based on thyristor ...
Adil Hameed Ahmed +1 more
doaj +1 more source
On the robustness of ultra-high voltage 4H-SiC IGBTs with an optimized retrograde p-well [PDF]
, 2019 The robustness of ultra-high voltage (>10kV) SiC IGBTs comprising of an optimized retrograde p-well is investigated. Under extensive TCAD simulations, we show that in addition to offering a robust control on threshold voltage and eliminating punch ...
Antoniou, M. +5 more
core +1 more source
Mechanical Stress Analysis in High Power Press Pack IGBT
Zhongguo dianli, 2020 Mechanical stress is one of the key factors affecting the electrical characteristics, thermal characteristics and reliability of high-voltage high-power press-pack IGBT devices.
Xinling TANG +7 more
doaj +1 more source
A Fault-Tolerant T-Type Multilevel Inverter Topology With Increased Overload Capability and Soft-Switching Characteristics [PDF]
, 2017 he performance of a novel three-phase four-leg fault-tolerant T-type inverter topology is introduced in this paper. This inverter topology provides a fault-tolerant solution to any open-circuit and certain short-circuit switching faults in the power ...
Demerdash, Nabeel +4 more
core +2 more sources
Thermo-mechanical stress of bonded wires used in high power modules with alternating and direct current modes [PDF]
, 2012 Today, power electronic reliability is a main subject of interest for many companies and laboratories. The main process leading to the IGBT failure is the cycling thermal stress.
Medjahed, Hassen +2 more
core +4 more sources
Subsidiary capability upgrading and parent-subsidiary relationship: insights from a Chinese acquisition in the UK [PDF]
, 2015 Purpose: - This study aims to explore capability upgrading of EMNE’s subsidiaries in developed countries and how the parent-subsidiary relationship influences such upgrading.
Birkinshaw J. +3 more
core +1 more source
Influence of Package Parasitic Parameters on Transient Current Distribution of Paralleled IGBT Chips
Zhongguo dianli, 2019 High power IGBT usually use multiple chips in parallel to achieve large current. The consistency of the dynamic and static current distribution of parallel chips is essential to improve the current level and reliability of devices.At first, the ...
Hao SHI +5 more
doaj +1 more source
Research on the Gate Oxide Layer Aging Trend of Power Electronic Device
IEEE Access, 2021 The introduction of fully electric vehicles (FEVs) into the mainstream has raised concerns about the reliability of their electronic components such as Insulated Gate Bipolar Translator (IGBT).
Guoqing Xu +4 more
doaj +1 more source
Analysis and hardware testing of cell capacitor discharge currents during DC faults in half-bridge modular multilevel converters [PDF]
, 2015 This paper focuses on the behaviour of the cell capacitor discharge currents during DC faults in half-bridge modular multilevel converters. Active switches, not designed for fault conditions, are tripped to minimize discharge currents effect on the ...
Aboushady, A.A., Ahmed, K.H., Jovcic, D.
core +2 more sources
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektronikiThis work presents the results of computer simulations of the operational characteristics of vertical channel Insulated Gate Bipolar Transistor (IGBT) device structures designed according to the following technologies: Trench-IGBT, Superjunction Trench ...
Trong Thanh Nguyen +3 more
doaj +1 more source