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IGBT MODULATOR FOR X-BAND KLYSTRONS

IGBT MODULATOR FOR X-BAND KLYSTRONS
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Measurements of Parameters of the Thermal Model of the IGBT Module

IEEE Transactions on Instrumentation and Measurement, 2019
In this paper, the problem of how to describe the thermal properties of the insulated-gate bipolar transistor (IGBT) module with the use of the compact thermal model is considered. This model makes it possible to calculate internal temperature of every semiconductor device included in this module with self-heating phenomena and mutual thermal couplings
Paweł Górecki, Janusz Zarebski, Krzysztof Górecki   +2 more
exaly   +2 more sources

Thermal characterization of IGBT power modules

Microelectronics Reliability, 1997
Abstract In this paper we report on experimental techniques for the thermal characterization of IGBT power modules. Three different systems have been used: the first one performs “in-time” characterization in order to control the most significant device parameters during normal operation or stress tests; the second one is for a complete and dynamic ...
COVA, Paolo, CIAPPA M, FRANCESCHINI, Giovanni, MALBERTI P, FANTINI F.   +4 more
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Chip Improvements for Future IGBT Modules

2008 IEEE Industry Applications Society Annual Meeting, 2008
Since the introduction of the IGBT module, improvements in power loss have been achieved by applying new technologies. With the process improvements of the past few years in trench gate technology and light-punch-through vertical structures, it had been thought that the performance of the latest IGBT and pin diode silicon power devices had been brought
John F. Donlon, Eric R. Motto, Tetsuo Takahashi, Hidenori Fujii, Katsumi Satoh   +4 more
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Analysis of an IGBT power module

Proceedings of IECON'94 - 20th Annual Conference of IEEE Industrial Electronics, 2002
The simulation of IGBT turn-on and turn-off phases is an important aspect of power converter design. Since power IGBTs have fast turn-on and turn-off time capabilities compared with SCRs and GTOs, the stray inductances of the circuit cause voltage spikes that can damage these devices.
A. Brambilla, E. Dallago, R. Romano
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6.5 kV IGBT-modules

Conference Record of the 1999 IEEE Industry Applications Conference. Thirty-Forth IAS Annual Meeting (Cat. No.99CH36370), 2003
Power control in applications with a line voltage of 3 kV DC and more today is managed by GTOs and IGCTs. The IGBT, a device with several advantages compared to power semiconductors in thyristor structure (low requirements regarding the driving unit, easy cooling as a result of the isolated structure) is fully developed and introduced up to a blocking ...
F. Auerbach, J.G. Bauer, M. Glantschnig, J. Gottert, M. Hierholzer, A. Porst, D. Reznik, H.-J. Schulze, T. Schutze, R. Spanke   +9 more
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IGBT inverter with vector modulation

Proceedings of 1994 IEEE International Symposium on Industrial Electronics (ISIE'94), 2002
This work presents the design of a three-phase inverter with insulated gate bipolar transistors (IGBTs). The pulse width modulation technique based on the space vector theory is analysed in detail. The modulation strategy considers the calculation of the on-times of the different voltage vectors that must be applied to the load, to generate the voltage
J. Rodriguez, E. Wiechmann, J. Holtz, A. Suarez, M. Sepulveda   +4 more
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