Results 131 to 140 of about 745 (181)

IGBT module failure analysis in railway applications

Microelectronics Reliability, 2008
Peer ...
X. Perpiñà, Jean-François Serviere, Xavier Jordà, A. Fauquet, Salvador Hidalgo, Jesús Urresti-Ibañez, José Rebollo, Michel Mermet-Guyennet   +7 more
openaire   +2 more sources

Application characteristics of an experimental RB-IGBT (reverse blocking IGBT) module

Conference Record of the 2004 IEEE Industry Applications Conference, 2004. 39th IAS Annual Meeting., 2004
This paper describes the characteristics of a new 1200 V, 100 A reverse blocking IGBT chip. It will be shown that this new chip exhibits symmetrical off-state blocking voltage and low losses making it a promising candidate for power conversion topologies such as matrix converters, current source inverters, and AC switches. A prototype module configured
E.R. Motto, J.F. Donlon, M. Tabata, H. Takahashi, Y. Yu, G. Majumdar   +5 more
openaire   +1 more source

IGBT modules robustness during turn-off commutation

Microelectronics Reliability, 2008
The behaviour in terms of robustness during turn-off of power IGBT modules is presented. The experimental characterisation is aimed to identify the main limits during turn-off in power IGBT modules in typical hard switching applications. In this paper an experimental characterization of high power IGBT modules at output currents beyond RBSOA, at high ...
Giovanni Busatto, Carmine Abbate, B. Abbate, Francesco Iannuzzo   +3 more
openaire   +1 more source

Further improvements in the reliability of IGBT modules

Conference Record of 1998 IEEE Industry Applications Conference. Thirty-Third IAS Annual Meeting (Cat. No.98CH36242), 2002
This paper gives a survey of the measures and the resulting improvements of IGBT module reliability reached by eupec during the introduction of IGBT high power modules. The points of improvement are in the areas of: bonding; base plate; partial discharge; and chip characteristics.
T. Schutze, H. Berg, M. Hierholzer
openaire   +1 more source

IGBT module rupture categorization and testing

IAS '97. Conference Record of the 1997 IEEE Industry Applications Conference Thirty-Second IAS Annual Meeting, 2002
The IGBT module rupture phenomenon is characterized through testing and categorized into two separate ratings for each device investigated. A DC link inverter bus fuse is being implemented in most designs as a protective device to minimize extremely high overcurrent faults and power module rupture.
D. Braun, D. Pixler, P. LeMay
openaire   +1 more source

Power-cycling-stability of IGBT-modules

IAS '97. Conference Record of the 1997 IEEE Industry Applications Conference Thirty-Second IAS Annual Meeting, 2002
Insulated gate bipolar transistors (IGBT) play a leading role in industrial power converter applications. They also reach traction applications where GTOs and thyristors are the predominant switching devices. In this application, power cycling stability and temperature cycling stability are especially very important requests for the long-term stability
F. Auerbach, A. Lenniger
openaire   +1 more source

Expanded Thermal Model for IGBT Modules

Conference Record of the 2006 IEEE Industry Applications Conference Forty-First IAS Annual Meeting, 2006
Heat dissipation problems with simultaneous heat generation in IGBT modules are calculated and simulated based on two developed thermal models. One is the analytical thermal model, which is based on Fourier series method. The other is a Finite Difference Model, which relies on the numerical solutions method.
B. Lu, J.L. Hudgins, A.T. Bryant, E. Santi, P.R. Palmer   +4 more
openaire   +1 more source

The Mechanism Analysis of IGBT Module Invalidation

2006 5th International Power Electronics and Motion Control Conference, 2006
The main purpose of this paper is to make a brief introduction of the applicable scope and the testing condition of IGBT module, to analyze the various reason causing IGBT module to be invalid which mainly involves drive part trouble, excessive heat, mechanical hurts, over voltage, over current and inductance that exists in the leads of circuit, and to
Xu Aide, Fan Yinhai, Wang Xinxin, Liu Yuanyuan   +3 more
openaire   +1 more source

A Module-Based Self-Balancing Series Connection for IGBTs

IEEE Transactions on Industrial Electronics, 2021
This article presents a self-balancing technique for voltage sharing of series-connected insulated gate bipolar transistors (IGBTs). Each series IGBT is augmented with an auxiliary switch, which operates in complementary to the main one, and a capacitor in series.
Lei Yang, Lili Zhu, Peng Fu, Lu Yue, Xiu Yao   +4 more
openaire   +1 more source

Analysis of IGBT modules connected in series

IEE Proceedings - Circuits, Devices and Systems, 1998
An analysis is presented of IGBTs connected in series, with reference to the phenomenon of parasitic oscillation. A linear model is developed for use in the study. Two methods are proposed; an analytical approach and a numerical approach based on the state space analysis. The analytical approach offers insight into the effect of the various parameters,
A.N. Githiari, P.R. Palmer
openaire   +1 more source