Results 151 to 160 of about 745 (181)

Lifetime estimation of IGBT modules for MMC-HVDC application

Microelectronics Reliability, 2018
Abstract Modular multilevel converters (MMCs) usually work in harsh operating environments due to their compact layouts and adverse mission profiles, which accelerate the thermomechanical fatigue process in insulated-gate bipolar transistor modules (IGBTs).
Longjun Wang, Jiayou Xu, Gang Wang 0017, Zheng Zhang   +3 more
openaire   +1 more source

Characteristics of high voltage IGBT modules

IEE Colloquium on `IGBT Propulsion Drives', 1995
IGBTs with blocking voltage values of 600 V, 1200 V and 1600 V are available for several applications. In traction applications, 600 V and 750 V DC mains are widely distributed. The 1500 V DC mains becomes more and more of interest in Asia, South America and in Europe. Industrial applications have AC mains of 360 V, 500 V, 660 V, etc. While 1600 V IGBT-
openaire   +1 more source

Ageing monitoring in IGBT module under sinusoidal loading

Microelectronics Reliability, 2015
This paper presents monitoring of ageing in high power insulated gate bipolar transistor (IGBT) modules subjected to sinusoidal loading at nominal power level. On-state voltage for IGBT, diode, and rise in interconnection resistance are used as ageing parameters.
Pramod Ghimire, Kristian Bonderup Pedersen, Bjørn Rannestad, Stig Munk-Nielsen   +3 more
openaire   +1 more source

A new approach for controlling series-connected IGBT modules

ISCAS 2001. The 2001 IEEE International Symposium on Circuits and Systems (Cat. No.01CH37196), 2002
A controller for combined parallel- and series-connected IGBT modules is reported. An advanced system state classification is applied to allow for real-time reconfiguration of the local controller structure. Thereby, a new scheme for controlling the rate of increase of the collector current is introduced.
Jan Thalheim, Norbert Felber, Wolfgang Fichtner   +2 more
openaire   +1 more source

Advanced SPICE modeling of large power IGBT modules

Conference Record of the 2002 IEEE Industry Applications Conference. 37th IAS Annual Meeting (Cat. No.02CH37344), 2003
An enhanced insulated gate bipolar transistor (IGBT) model based on the Kraus model with new derivations based on an extra parameter accounting for p-i-n injection was developed to allow simulation of both trench and DMOS IGBT structures. Temperature dependence was also implemented in the model.
R. Azar, F. Udrea, M. DeSilva, G. Amaratunga, W.T. Ng, F. Dawson, W. Findlay, P. Waind   +7 more
openaire   +1 more source

Educational IGBT Power Switch Module

2007
Power electronics is modern, fast developing, complex and multidisciplinary technical field. Because of its complexity it is very difficult to efficiently teach power electronics. Modern universal power electronics laboratory is the key for efficient education of power electronics.
Jakopović, Željko, Čihak, Tihomir
openaire   +1 more source

Thermal Performance Optimization of Integrated Microchannel Cooling Plate for IGBT Power Module

Micromachines, 2023
Hanyang Xu, Tian Wenchao
exaly  

Multi-Chip IGBT Module Failure Monitoring Based on Module Transconductance with Temperature Calibration

Electronics (Switzerland), 2020
Chenyuan Wang, Xiaoxin Wu, Lie Li
exaly  

Impact of thermal interface material on power cycling lifetime of IGBT module

Microelectronics Reliability, 2021
Lijian Ding
exaly  

Optimized selection of materials for IGBT module packaging

Microelectronics Reliability, 2022
Michael Daenen, W De Ceuninck
exaly