Results 141 to 150 of about 745 (181)

Next generation industrial IGBT module

2014 IEEE Energy Conversion Congress and Exposition (ECCE), 2014
In this paper the latest IGBT and free wheel diode chip technologies are utilized in new industrial IGBT modules with reduced size and weight. Chip technology refinement and optimization are employed to provide a reduction of static and dynamic losses.
Eric R. Motto, John F. Donlon, Masaomi Miyazawa, Mitsuharu Tabata, Hiroki Muraoka, Tomohiro Hieda, Thomas Radke   +6 more
openaire   +1 more source

Gate drive considerations for IGBT modules

IEEE Transactions on Industry Applications, 1995
The switching performance of an insulated gate bipolar transistor (IGBT) module depends on the drive circuit characteristics and external DC loop inductance. The authors discuss the influence of these parameters on switching losses, diode recovery, switching voltage transients, short-circuit operation, and d nu /dt induced current.
R. Chokhawala, J. Catt, B. Pelly
openaire   +1 more source

Reliability metrics for IGBT power modules

2010 11th International Conference on Electronic Packaging Technology & High Density Packaging, 2010
In the field of IGBT modules, there is currently a plethora of new packaging materials being developed with a view to increased “reliability”. Whilst this approach is often essential to meet the needs for the ever increased demand in harsher environments, the result can often be seen as an over-engineered solution with resultant excessive cost.
D.R. Newcombe, Dinesh Cha, C. Bailey, H. Lu   +3 more
openaire   +1 more source

Monitoring of paralleled IGBT/diode modules

IEEE Transactions on Power Electronics, 1999
A method is presented to monitor the state of a converter with an unlimited number of paralleled insulated gate bipolar transistor (IGBT)/diode modules with individual gate drives. The monitoring functions can be implemented without extra signal processing or load-side components. The method is based on the active gate-controlled current balancing (CB)
P. Hofer-Noser, N. Karrer
openaire   +1 more source

Study on temperature distribution of IGBT module

2017 18th International Conference on Electronic Packaging Technology (ICEPT), 2017
Insulated gate bipolar transistor (IGBT) operates at high current, high power and repeated shock current conditions. Joule heating induced during high current conditions, subsequently raising the temperature of the IGBT module. In this paper, we carried out the DC power cycling test with the 200 A current condition. The temperature distribution and the
Chao Fang, Tong An, Fei Qin, Xiaorui Bie, Jingyi Zhao   +4 more
openaire   +1 more source

Characterization of New Generation IGBT-Modules

EPE Journal, 1994
SummaryThe development of IGBT devices is still moving ahead faster devices with lower losses. This paper will focus on characterization of a third generation IGBT-module and a second generation IGBT-module with improved free-wheeling diodes where especially the power losses are compared in different test conditions.
Blaabjerg, Frede, Pedersen, John Kim, Jæger, Ulrik   +2 more
openaire   +2 more sources

Analysis on the difference of the characteristic between high power IGBT modules and press pack IGBTs

Microelectronics Reliability, 2017
Abstract The insulated gate bipolar transistor (IGBT) has been widely employed in such applications as alternate current motors and inverters for its lower driving power and lower on-state voltage. IGBT modules and press pack IGBTs are the most commonly used packaging for high-voltage and high-power-density applications.
Erping Deng, Zhibin Zhao, Qingming Xin, Jingwei Zhang, Yongzhang Huang   +4 more
openaire   +1 more source

Protection of IGBT Modules in Inverter Circuits

EPE Journal, 1991
(1991). Protection of IGBT Modules in Inverter Circuits. EPE Journal: Vol. 1, No. 1, pp. 57-59.
openaire   +1 more source

Short circuit analysis and protection of power module IGBTs

Twentieth Annual IEEE Applied Power Electronics Conference and Exposition, 2005. APEC 2005., 2005
In this paper, the failure modes of power module IGBTs have been experimentally studied by focusing on the short-circuit behaviour of the devices, with reference to the hard switching fault (HSF) and fault under load (FUL) types of fault. In particular, the current ringing phenomenon, having an important influence on the short circuit behaviour of the ...
CHEN Y, MUSUMECI S, PAGANO R, RACITI, Angelo, SMEDLEY K.   +4 more
openaire   +1 more source

Multiphysics Coupling in IGBT Modules: A Review

Journal of Electronic Packaging
Abstract Since insulated gate bipolar transistor (IGBT) is a core component for power conversion in a power electronic system, guaranteeing the safety of IGBT becomes a crucial task for the maintenance of the power system. However, the mechanism of IGBT failure is a considerably complicated process related to the dynamic process ...
Weiqiang Tian, Naichao Chen
openaire   +1 more source