Results 171 to 180 of about 11,875 (232)

Thermal characterization of IGBT power modules

Microelectronics Reliability, 1997
Abstract In this paper we report on experimental techniques for the thermal characterization of IGBT power modules. Three different systems have been used: the first one performs “in-time” characterization in order to control the most significant device parameters during normal operation or stress tests; the second one is for a complete and dynamic ...
P. COVA, M. CIAPPA, G. FRANCESCHINI, P. MALBERTI, FANTINI, Fausto   +4 more
openaire   +3 more sources

Next generation industrial IGBT module

2014 IEEE Energy Conversion Congress and Exposition (ECCE), 2014
In this paper the latest IGBT and free wheel diode chip technologies are utilized in new industrial IGBT modules with reduced size and weight. Chip technology refinement and optimization are employed to provide a reduction of static and dynamic losses.
Eric R. Motto, John F. Donlon, Masaomi Miyazawa, Mitsuharu Tabata, Hiroki Muraoka, Tomohiro Hieda, Thomas Radke   +6 more
openaire   +1 more source

IGBT inverter with vector modulation

Proceedings of 1994 IEEE International Symposium on Industrial Electronics (ISIE'94), 2002
This work presents the design of a three-phase inverter with insulated gate bipolar transistors (IGBTs). The pulse width modulation technique based on the space vector theory is analysed in detail. The modulation strategy considers the calculation of the on-times of the different voltage vectors that must be applied to the load, to generate the voltage
J. Rodriguez, E. Wiechmann, J. Holtz, A. Suarez, M. Sepulveda   +4 more
openaire   +1 more source

IGBT modules robustness during turn-off commutation

Microelectronics Reliability, 2008
The behaviour in terms of robustness during turn-off of power IGBT modules is presented. The experimental characterisation is aimed to identify the main limits during turn-off in power IGBT modules in typical hard switching applications. In this paper an experimental characterization of high power IGBT modules at output currents beyond RBSOA, at high ...
BUSATTO, Giovanni, ABBATE, Carmine, B. ABBATE, IANNUZZO, Francesco   +3 more
openaire   +1 more source

IGBT module rupture categorization and testing

IAS '97. Conference Record of the 1997 IEEE Industry Applications Conference Thirty-Second IAS Annual Meeting, 2002
The IGBT module rupture phenomenon is characterized through testing and categorized into two separate ratings for each device investigated. A DC link inverter bus fuse is being implemented in most designs as a protective device to minimize extremely high overcurrent faults and power module rupture.
D. Braun, D. Pixler, P. LeMay
openaire   +1 more source

Analysis of an IGBT power module

Proceedings of IECON'94 - 20th Annual Conference of IEEE Industrial Electronics, 2002
The simulation of IGBT turn-on and turn-off phases is an important aspect of power converter design. Since power IGBTs have fast turn-on and turn-off time capabilities compared with SCRs and GTOs, the stray inductances of the circuit cause voltage spikes that can damage these devices.
A. Brambilla, E. Dallago, R. Romano
openaire   +1 more source

Application characteristics of an experimental RB-IGBT (reverse blocking IGBT) module

Conference Record of the 2004 IEEE Industry Applications Conference, 2004. 39th IAS Annual Meeting., 2004
This paper describes the characteristics of a new 1200 V, 100 A reverse blocking IGBT chip. It will be shown that this new chip exhibits symmetrical off-state blocking voltage and low losses making it a promising candidate for power conversion topologies such as matrix converters, current source inverters, and AC switches. A prototype module configured
E.R. Motto, J.F. Donlon, M. Tabata, H. Takahashi, Y. Yu, G. Majumdar   +5 more
openaire   +1 more source

Expanded Thermal Model for IGBT Modules

Conference Record of the 2006 IEEE Industry Applications Conference Forty-First IAS Annual Meeting, 2006
Heat dissipation problems with simultaneous heat generation in IGBT modules are calculated and simulated based on two developed thermal models. One is the analytical thermal model, which is based on Fourier series method. The other is a Finite Difference Model, which relies on the numerical solutions method.
B. Lu, J.L. Hudgins, A.T. Bryant, E. Santi, P.R. Palmer   +4 more
openaire   +1 more source

Power-cycling-stability of IGBT-modules

IAS '97. Conference Record of the 1997 IEEE Industry Applications Conference Thirty-Second IAS Annual Meeting, 2002
Insulated gate bipolar transistors (IGBT) play a leading role in industrial power converter applications. They also reach traction applications where GTOs and thyristors are the predominant switching devices. In this application, power cycling stability and temperature cycling stability are especially very important requests for the long-term stability
F. Auerbach, A. Lenniger
openaire   +1 more source

Reliability metrics for IGBT power modules

2010 11th International Conference on Electronic Packaging Technology & High Density Packaging, 2010
In the field of IGBT modules, there is currently a plethora of new packaging materials being developed with a view to increased “reliability”. Whilst this approach is often essential to meet the needs for the ever increased demand in harsher environments, the result can often be seen as an over-engineered solution with resultant excessive cost.
D.R. Newcombe, Dinesh Cha, C. Bailey, H. Lu   +3 more
openaire   +1 more source