Results 11 to 20 of about 657,295 (208)
Heat Dissipation Characteristics of IGBT Module Based on Flow-Solid Coupling [PDF]
Micromachines, 2022 With the increase of power level and integration in electric vehicle controllers, the heat flux of the key silicon-based IGBT (Insulated Gate Bipolar Transistor) device has reached its physical limit.
Lipeng Tan +5 more
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Thermal Performance Analysis of IGBT Module Packaging
机车电传动, 2013 Afinite element model of IGBT module packaging was constructed by utilizing FEAsoftware of ANSYS. Effect of different grease thickness, equivalent heat transfer coefficient, base plate thickness and material, solder thickness and material, substrate ...
DING Jie +4 more
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Thermal Load Application Method for Temperature Cycle Test of Power Module PP-IGBT
Zhongguo dianli, 2023 Temperature cycling test is an important test method to study the thermal fatigue aging characteristics of power module press pack insulated gate bipolar transistor (PP-IGBT) devices. Therefore, taking the PP-IGBT of flexible direct converter valve power
Biaojun LI +3 more
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Thermal/Mechanical Characteristics Simulation Analysis of Solder Layer Damage in IGBT Modules [PDF]
MicromachinesThe insulated gate bipolar transistor (IGBT) is widely applied in industrial fields such as rail transit, wind power generation, smart grids, and renewable energy. The temperature distribution, stress variation patterns, thermal performance, and modeling
Jianbo Zhou +4 more
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Kongzhi Yu Xinxi Jishu, 2017 It briefly introduced the package principle of pressure-contact IGBT devices. In order to achieve high-integration of IGBT module, the effect of pressure-contact technology on its impendence characteristic, parallel application and thermal performance ...
YUAN Yong +4 more
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The Application of Approximate Entropy Theory in Defects Detecting of IGBT Module [PDF]
Active and Passive Electronic Components, 2012 Defect is one of the key factors in reducing the reliability of the insulated gate bipolar transistor (IGBT) module, so developing the diagnostic method for defects inside the IGBT module is an important measure to avoid catastrophic failure and improves
Shengqi Zhou +5 more
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Research on Partial Discharge Behavior of AlN Substrate in High Voltage IGBT Module
Kongzhi Yu Xinxi Jishu, 2015 Finite element method was utilized to simulate static electric field distribution in AlN substrate of IGBT module, on which partial discharge experiment was performed. Furthermore, the effect of periodic thermal stress on partial discharge characteristic
FANG Jie +5 more
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A study on dynamic avalanche test of IGBT module
机车电传动, 2023 During the turn-off of IGBT modules, dynamic avalanche will occur when a large electric field is generated inside the chip. In this paper, an experimental scheme was designed and verified to analyze the effect of different factors on dynamic avalanche ...
YU Wei, ZHENG Yu, YUAN Tao, REN Yadong
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Thermal Performance Analysis of High-power IGBT Module Based on ANSYS
Kongzhi Yu Xinxi Jishu, 2012 A three-dimensional FEA model of IGBT module is constructed by utilizing finite element analysis of ANSYS. Temperature distribution of the model under steady condition is analyzed and effects of baseplate material and thickness, solder material and layer
FANG Jie +4 more
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Thermal Design and Simulation of High Power Press-pack IGBT Module
Kongzhi Yu Xinxi Jishu, 2016 With the improvement of packaging power level of IGBT module, power density and operating temperature on chip will rise, which may lead to an increasing affect of thermal stress on long-term reliability of the device.
XIAO Hongxiu, DOU Zechun, PENG Yongdian
doaj +2 more sources