Results 11 to 20 of about 580,955 (199)
Thermal Resistance Distribution Experiment of Parallel Sub-Module in Press-Pack IGBT Device
Zhongguo dianli, 2020 In the rigid Press-Pack IGBT module, the pressure distribution of parallel chips determines the contact thermal resistance and contact electrical resistance directly.
Lubin HAN, Lin LIANG, Yong KANG
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Thermal Performance Analysis of IGBT Module Packaging
机车电传动, 2013 Afinite element model of IGBT module packaging was constructed by utilizing FEAsoftware of ANSYS. Effect of different grease thickness, equivalent heat transfer coefficient, base plate thickness and material, solder thickness and material, substrate ...
DING Jie +4 more
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Thermal Load Application Method for Temperature Cycle Test of Power Module PP-IGBT
Zhongguo dianli, 2023 Temperature cycling test is an important test method to study the thermal fatigue aging characteristics of power module press pack insulated gate bipolar transistor (PP-IGBT) devices. Therefore, taking the PP-IGBT of flexible direct converter valve power
Biaojun LI +3 more
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Kongzhi Yu Xinxi Jishu, 2017 It briefly introduced the package principle of pressure-contact IGBT devices. In order to achieve high-integration of IGBT module, the effect of pressure-contact technology on its impendence characteristic, parallel application and thermal performance ...
YUAN Yong +4 more
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Prognostics for electronics components of avionics - NASA IGBT accelerated ageing case study [PDF]
, 2013 Insulate gate bipolar transistors (IGBTs) are widely used in electric vehicles, railway locomotive and new generation aircrafts, due to the IGBTs have advantages in small conduction resistance and small drive current.
Xie, Yuan'an
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Application review of IGBT power module cooling system
机车电传动, 2022 As a kind of power semiconductor field-controlled self-shutdown electronic device, IBGT has become an irreplaceable component in new energy vehicle energy conversion, motor driving and high-voltage power switching units.
WANG Weilong +2 more
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A study on dynamic avalanche test of IGBT module
机车电传动, 2023 During the turn-off of IGBT modules, dynamic avalanche will occur when a large electric field is generated inside the chip. In this paper, an experimental scheme was designed and verified to analyze the effect of different factors on dynamic avalanche ...
YU Wei, ZHENG Yu, YUAN Tao, REN Yadong
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Research on Partial Discharge Behavior of AlN Substrate in High Voltage IGBT Module
Kongzhi Yu Xinxi Jishu, 2015 Finite element method was utilized to simulate static electric field distribution in AlN substrate of IGBT module, on which partial discharge experiment was performed. Furthermore, the effect of periodic thermal stress on partial discharge characteristic
FANG Jie +5 more
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Thermal Performance Analysis of High-power IGBT Module Based on ANSYS
Kongzhi Yu Xinxi Jishu, 2012 A three-dimensional FEA model of IGBT module is constructed by utilizing finite element analysis of ANSYS. Temperature distribution of the model under steady condition is analyzed and effects of baseplate material and thickness, solder material and layer
FANG Jie +4 more
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Kongzhi Yu Xinxi Jishu, 2016 Thermal characteristics of IGBT module structure are easily influenced by outside conditions, such as changes of packing technology or raw material performance.
ZHOU Wangjun, FENG Qin, WANG Xianyuan
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