Results 21 to 30 of about 580,955 (199)

Deep learning-based auto-contouring for organs at risk in three-dimensional image-guided brachytherapy for cervical cancer and endometrial cancer. [PDF]

open access: yesJ Appl Clin Med Phys
Abstract Background Automatic contouring can reduce the time required for delineating organs at risk (OARs) in brachytherapy planning and minimize interobserver variability. Purpose This study aimed to develop and evaluate a deep learning‐based automatic contouring model for OARs in three‐dimensional image‐guided brachytherapy (3D‐IGBT) for cervical ...
Takahashi K   +11 more
europepmc   +2 more sources

Development of a Low Noise IGBT Module

open access: yesIEEJ Transactions on Industry Applications, 2008
AbstractHigh‐frequency leakage current that may cause serious conducted EMI problems flows through an inverter system. The paths of the leakage current are stray capacitances that are formed inside of motors, cables, and IGBT modules. This paper proposes a new IGBT module that realizes low conducted emission noise by flipping the IGBT chip of the lower‐
Tamate, Michio   +5 more
openaire   +2 more sources

Effect of solder layer crack on the thermal reliability of Insulated Gate Bipolar Transistors

open access: yesCase Studies in Thermal Engineering, 2019
In order to study the thermal reliability of solder layer fatigue damage in Insulated Gate Bipolar Transistors (IGBT), the Finite Element Analysis (FEA) of the crack damage of the solder layer is described.
Mingxing Du   +4 more
doaj   +1 more source

A method for predicting IGBT junction temperature under transient condition [PDF]

open access: yes, 2008
In this paper, a method to predict junction temperature of the solid-state switch under transient condition is presented. The method is based on the thermal model of the switch and instantaneous measurement of the energy loss in the device.
Putrus, G. A.   +6 more
core   +1 more source

Junction Temperature Detection for IGBT Power Module Using Network Analyzer Methodology

open access: yes, 2018
This paper utilizes the network analyser procedure to determine the junction temperature of the insulated gate bipolar transistors (IGBTs) power modules (PMs).
Chong, Xiang Lu   +6 more
core   +7 more sources

Thermal model of the IGBT module

open access: yesJournal of Physics: Conference Series, 2018
In the paper the dynamic compact thermal model of the IGBT module is proposed. This model makes it possible to calculate internal temperatures of diodes and transistors included in the considered IGBT module with selfheating in each device and mutual thermal couplings between them taken into account.
Paweł Górecki   +2 more
openaire   +1 more source

Transient electrothermal simulation of power semiconductor devices [PDF]

open access: yes, 2010
In this paper, a new thermal model based on the Fourier series solution of heat conduction equation has been introduced in detail. 1-D and 2-D Fourier series thermal models have been programmed in MATLAB/Simulink.
Bryant, Angus T.   +12 more
core   +1 more source

Health Condition Assessment of Base-Plate Solder for Multi-Chip IGBT Module in Wind Power Converter

open access: yesIEEE Access, 2019
The base-plate solder fatigue of the IGBT module is one of the failures of the wind power converter; however, the existing health condition monitoring method based on infrared thermography is difficult to be applied to the actual applications.
Yaogang Hu   +3 more
doaj   +1 more source

SPICE-Aided Nonlinear Electrothermal Modeling of an IGBT Module

open access: yes, 2023
The paper proposes a compact electrothermal model of the IGBT module in the form of a subcircuit for SPICE. This model simultaneously takes into account electrical phenomena occurring in the module components and thermal phenomena occurring in this ...
Paweł Górecki, Krzysztof Górecki
core   +1 more source

Partial discharge characteristics of IGBT module in mine frequency converter under step pulse

open access: yes矿业科学学报, 2020
The partial discharge occurs in IGBT device module of mine equipment.which leads to the breakdown of insulation and burns the device.In this paper the causes and characteristics of pd in IGBT module were studied.Therefore, based on the research of ...
Wang Yanwen   +5 more
doaj   +1 more source

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