Results 191 to 200 of about 11,875 (232)

Analysis of IGBT modules connected in series

IEE Proceedings - Circuits, Devices and Systems, 1998
An analysis is presented of IGBTs connected in series, with reference to the phenomenon of parasitic oscillation. A linear model is developed for use in the study. Two methods are proposed; an analytical approach and a numerical approach based on the state space analysis. The analytical approach offers insight into the effect of the various parameters,
A.N. Githiari, P.R. Palmer
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IGBT-based switching modules for laser applications

IEEE Transactions on Dielectrics and Electrical Insulation, 2015
This paper presents the design of IGBT-based switching modules for a nitrogen gas laser. First, the CC-topology, which drives the laser, is discussed and simulated. Simple models of the laser tube and the switch are presented. The comparison of the simulation with experimental data shows good accuracy.
Andreas Kluge, Henry Gueldner, Thomas Trompa, David Mory   +3 more
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Educational IGBT Power Switch Module

2007
Power electronics is modern, fast developing, complex and multidisciplinary technical field. Because of its complexity it is very difficult to efficiently teach power electronics. Modern universal power electronics laboratory is the key for efficient education of power electronics.
Jakopović, Željko, Čihak, Tihomir
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High temperature performance limits of IGBT modules

Conference Record of 1998 IEEE Industry Applications Conference. Thirty-Third IAS Annual Meeting (Cat. No.98CH36242), 2002
In order to optimally utilize insulated gate bipolar transistors (IGBT) in high power converters, the limitations to high temperature performance of these devices need to be clearly identified. This paper presents the influence of electrothermal effects on the switching characteristics and reliability of punch-through (PT) and nonpunch-through (NPT ...
M. Trivedi, S. Pendharkar, K. Shenai
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Electric field investigation in IGBT power modules

Proceedings of the 2004 IEEE International Conference on Solid Dielectrics, 2004. ICSD 2004., 2004
Power module reliability can be increased if problems due to high electric fields can be better understood. This paper proposes a global analysis using finite element simulations. Results are confirmed thanks to optical detection of partial discharge localization. Solutions to reduce field reinforcement are proposed and discussed.
D. Frey, J.L. Schanen, X. Auge, O. Lesaint   +3 more
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AlSiC composite materials in IGBT power modules

Conference Record of the 2000 IEEE Industry Applications Conference. Thirty-Fifth IAS Annual Meeting and World Conference on Industrial Applications of Electrical Energy (Cat. No.00CH37129), 2002
The reliability of IGBT modules is limited by thermal fatigue of soft solder layers due to different coefficients of thermal expansion. A thermally matching conducting material can be produced from Al matrix composites containing high volume fractions of SiC particulates.
G. Mitic, H.P. Degischer, G. Lefranc, T. Licht   +3 more
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IGBT module characterization, modeling and parasitic extraction

IWIPP Proceedings. IEEE International Workshop on Integrated Power Packaging (Cat. No.98EX203), 2002
IGBT modules are extensively used in power electronic circuit applications. It is important to understand the limits imposed by unfavorable circuit conditions on the performance of the IGBT module in the development of robust power electronic systems.
A. Mulay, K. Shenai
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The Mechanism Analysis of IGBT Module Invalidation

2006 5th International Power Electronics and Motion Control Conference, 2006
The main purpose of this paper is to make a brief introduction of the applicable scope and the testing condition of IGBT module, to analyze the various reason causing IGBT module to be invalid which mainly involves drive part trouble, excessive heat, mechanical hurts, over voltage, over current and inductance that exists in the leads of circuit, and to
Xu Aide, Fan Yinhai, Wang Xinxin, Liu Yuanyuan   +3 more
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Package Fatigue Failure Evolution of IGBT Modules

2019 IEEE 3rd International Electrical and Energy Conference (CIEEC), 2019
Aiming at the fatigue failure of IGBT module package, the failure evolution process of the weak link- bond wire and solder layer is studied. For bond wire failure, the evolution process of bond wire cracks is studied. The variation law in the evolution process is analyzed by the bond wire resistance as the characterization parameter of crack evolution.
Shengxue Tang, Dong Chen, Fang Yao, Zhankai Li   +3 more
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Intelligent power modules for driving systems [IGBTs]

Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics, 2002
A major challenge for systems engineers is the selection, drive system, optimum operation and implementation of the protection functions of power semiconductor devices. This article describes the Intelligent Power Module (IPM) for driving 3-phase asynchronous machines for the voltage range to 1200 V.
K. Reinmuth, H. Stut, L. Lorenz, S. Konrad   +3 more
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