Results 51 to 60 of about 745 (181)

Thermal Performance Analysis of IGBT Module Packaging

机车电传动, 2013
Afinite element model of IGBT module packaging was constructed by utilizing FEAsoftware of ANSYS. Effect of different grease thickness, equivalent heat transfer coefficient, base plate thickness and material, solder thickness and material, substrate ...
DING Jie, TANG Yu-tu, XIN Li, ZHANG Chen-lin, HU Chang-fa   +4 more
doaj  

Research on Pressure-contact Technology of Power Terminals for the Design of High-integration IGBT Module

Kongzhi Yu Xinxi Jishu, 2017
It briefly introduced the package principle of pressure-contact IGBT devices. In order to achieve high-integration of IGBT module, the effect of pressure-contact technology on its impendence characteristic, parallel application and thermal performance ...
YUAN Yong, XIONG Hui, HUANG Nan, CHEN Yanping, XIN Li   +4 more
doaj  

Application of Silver Sintering Technology in Press-pack IGBTs

机车电传动, 2021
Silver sintering technology which has the characteristics of low temperature connection, low thermal resistance, low stress and high melting point, has gradually become the application trend of interface reliability-connection in insulated gate bipolar ...
Tingchang SHI, Han LI, Guiqin CHANG, Haihui LUO, Guozhong DONG, Guoyou LIU   +5 more
doaj  

Macro-Mesoscale Modeling of the Evolution of the Surface Roughness of the Al Metallization Layer of an IGBT Module during Power Cycling. [PDF]

Materials (Basel), 2023
An T, Zheng X, Qin F, Dai Y, Gong Y, Chen P.   +5 more
europepmc   +1 more source

Partial discharge measurement and analysis in high voltage IGBT modules under DC voltage

CSEE Journal of Power and Energy Systems, 2018
Insulation performance of high voltage IGBT modules is one of the key attributes in power system applications. However, the existing standards of IGBT devices and research on the evaluation of insulation performance of high voltage IGBT modules are ...
Pengyu Fu, Zhibin Zhao, Xiang Cui, Teng Wen, Haoyu Wang, Xuebao Li, Peng Zhang   +6 more
doaj   +1 more source

Development of 6 500 V/200 A High-voltage and High-power Localization IGBT

机车电传动, 2017
It designed and packed localization IGBT and FRD chip of CRRC. Structural optimization of IGBT was designed through ANSYS simulations of electromagnetic field, heat, stress and so on.
CHEN Hong, YANG Chunyu, LIU Geli, WU Caisheng, CAO Lin, SUN Jun   +5 more
doaj  

Real‐time reliability evaluation method for IGBT module in MMC based on junction temperature and bond wire failure online monitoring

IET Power Electronics
The lack of an MMC reliability evaluation approach that incorporates data on essential components' health monitoring in the already related research prevents reliability from being further improved.
Zhonghao Dongye, Wuyu Zhang, Lei Qi, Bowen Gu, Hong Shen, Xiangyu Zhang, Xiang Cui   +6 more
doaj   +1 more source

Power-cycling degradation monitoring of an IGBT module with VCE(sat) measurement in continuous operation of a chopper circuit

Power Electronic Devices and Components
This paper presents a power-cycling degradation monitoring method of an IGBT module with a VCE(sat) sensing circuit and junction temperature prediction by a three-dimensional structure model.
Kazunori Hasegawa, Kanta Hara, Nobuyuki Shishido, Satoshi Nakano, Wataru Saito, Tamotsu Ninomiya   +5 more
doaj   +1 more source

Thermal Management on IGBT Power Electronic Devices and Modules

IEEE Access, 2018
As an increasing attention towards sustainable development of energy and environment, the power electronics (PEs) are gaining more and more attraction on various energy systems. The insulated gate bipolar transistor (IGBT), as one of the PEs with numerous advantages and potentials for development of higher voltage and current ratings, has been used in ...
Cheng Qian 0003, Amir Mirza Gheitaghy, Jiajie Fan, Hongyu Tang, Bo Sun 0002, Huaiyu Ye, Guoqi Zhang   +6 more
openaire   +4 more sources

Measurement Method of IGBT Thermal Resistance Based on Structure Function

Kongzhi Yu Xinxi Jishu, 2015
Based on the structure function theory, it studied the thermal characteristics between the same IGBT case and the different baseplate interfaces, and found separation point of structure functions, by which thermal resistance between the internal PN ...
FENG Qin, LI Shiping, CHEN Yan, WAN Chaoqun, LI Yi   +4 more
doaj