Results 61 to 70 of about 745 (181)
Switching Characteristic of HiPak 6.5 kV IGBT and the Influence of Gate Unit
It presented the investigation on the reverse recovery of ABB HiPak 6 500 V/750 A IGBT module. For the first time, the forward recovery and the reverse recovery of diode and its anti-parallel connected IGBT were researched as a function of di/dt, and the
Makan Chen, Raffael Schnell
doaj
A study on dynamic avalanche test of IGBT module
During the turn-off of IGBT modules, dynamic avalanche will occur when a large electric field is generated inside the chip. In this paper, an experimental scheme was designed and verified to analyze the effect of different factors on dynamic avalanche ...
YU Wei, ZHENG Yu, YUAN Tao, REN Yadong
doaj
Thermal Design and Simulation of High Power Press-pack IGBT Module
With the improvement of packaging power level of IGBT module, power density and operating temperature on chip will rise, which may lead to an increasing affect of thermal stress on long-term reliability of the device.
XIAO Hongxiu, DOU Zechun, PENG Yongdian
doaj
Application Research of 1 700 V/1 600 A SiC Hybrid IGBT
SiC module has advantages of high frequency, high efficiency, high temperature resistance and antiradiation. The application situation of SiC module was introduced, and the characteristics of SiC-JBS and SiC hybrid IGBT was expatiated.
YANG Tao, TANG Wei
doaj
Thermal/Mechanical Characteristics Simulation Analysis of Solder Layer Damage in IGBT Modules
The insulated gate bipolar transistor (IGBT) is widely applied in industrial fields such as rail transit, wind power generation, smart grids, and renewable energy. The temperature distribution, stress variation patterns, thermal performance, and modeling
Jianbo Zhou +4 more
doaj +1 more source
Application review of IGBT power module cooling system
As a kind of power semiconductor field-controlled self-shutdown electronic device, IBGT has become an irreplaceable component in new energy vehicle energy conversion, motor driving and high-voltage power switching units.
WANG Weilong +2 more
doaj
Study on influence of solder voids on power cycling lifetime of IGBT module
Studying the influencing factors of solder lifetime is of great significance to improve the reliability of IGBT modules, but the influence of solder voids as a solder layer defect on the power cycling lifetime of IGBT modules is still unknown ...
LIU Peng +4 more
doaj
Research on Partial Discharge Behavior of AlN Substrate in High Voltage IGBT Module
Finite element method was utilized to simulate static electric field distribution in AlN substrate of IGBT module, on which partial discharge experiment was performed. Furthermore, the effect of periodic thermal stress on partial discharge characteristic
FANG Jie +5 more
doaj
Monitoring the peak junction hotspot temperature in IGBT modules is critical for ensuring the reliability of high-power industrial multilevel inverters, particularly when operating under extreme thermal conditions, such as in traction applications.
Ahmed H. Okilly +4 more
doaj +1 more source
Thermal Performance Analysis of High-power IGBT Module Based on ANSYS
A three-dimensional FEA model of IGBT module is constructed by utilizing finite element analysis of ANSYS. Temperature distribution of the model under steady condition is analyzed and effects of baseplate material and thickness, solder material and layer
FANG Jie +4 more
doaj

