Results 81 to 90 of about 657,295 (208)

Thermal Management on IGBT Power Electronic Devices and Modules

open access: yesIEEE Access, 2018
As an increasing attention towards sustainable development of energy and environment, the power electronics (PEs) are gaining more and more attraction on various energy systems. The insulated gate bipolar transistor (IGBT), as one of the PEs with numerous advantages and potentials for development of higher voltage and current ratings, has been used in ...
Cheng Qian 0003   +6 more
openaire   +4 more sources

Research on Baseplate Soldering Process of High-voltage IGBT Module

open access: yes, 2011
The solder layer between AlN substrate and AlSiC baseplate is a main way of heat dissipation for high-voltage IGBT module. Therefore, the void rate of the solder layer has a direct impact on the performance and reliability of high-voltage IGBT module. In

core   +1 more source

Remaining Useful Life Prediction of an IGBT Module in Electric Vehicles Statistical Analysis

open access: yes, 2020
The whole life cycle of an insulated gate bipolar transistor (IGBT) is a kind of asymmetry process, while the whole life cycles of a set of IGBTs can be regarded as a symmetry process.
Zhixiong Li   +5 more
core   +1 more source

Switching Characteristic of HiPak 6.5 kV IGBT and the Influence of Gate Unit

open access: yesKongzhi Yu Xinxi Jishu, 2015
It presented the investigation on the reverse recovery of ABB HiPak 6 500 V/750 A IGBT module. For the first time, the forward recovery and the reverse recovery of diode and its anti-parallel connected IGBT were researched as a function of di/dt, and the
Makan Chen, Raffael Schnell
doaj  

Application Research of 1 700 V/1 600 A SiC Hybrid IGBT

open access: yes机车电传动, 2018
SiC module has advantages of high frequency, high efficiency, high temperature resistance and antiradiation. The application situation of SiC module was introduced, and the characteristics of SiC-JBS and SiC hybrid IGBT was expatiated.
YANG Tao, TANG Wei
doaj  

Characterizations of a Proposed 3300-V Press-Pack IGBT Module Using Nanosilver Paste for High-Voltage Applications

open access: yes, 2018
Nanosilver paste was used in this study as a die-attachment material for 3300-V power chips to eliminate the pressure contact of a press-pack power module.
Li, Xianbin   +7 more
core   +1 more source

Application review of IGBT power module cooling system

open access: yes机车电传动, 2022
As a kind of power semiconductor field-controlled self-shutdown electronic device, IBGT has become an irreplaceable component in new energy vehicle energy conversion, motor driving and high-voltage power switching units.
WANG Weilong   +2 more
doaj  

Electric Field Analysis of Press-Pack IGBTs

open access: yesE3S Web of Conferences, 2018
High voltage IGBT module is the ideal option for the VSC-HVDC power transmission application. At present, wire-bonded technology and press-pack technology are available packaging technologies for high voltage IGBT.
Xinling Tang   +4 more
doaj   +1 more source

Ultrasonic Wire Bonding Technology in High-power IGBT Module Assembly

open access: yes, 2011
It introduces the mechanism of ultrasonic wire bonding, analyzes the material properties and the interface characteristics of the bonding for high-power IGBT module, and discusses the effects of bonding parameters on bonding strength.
张泉, 覃荣震
core   +1 more source

Estimation of Peak Junction Hotspot Temperature in Three-Level TNPC-IGBT Modules for Traction Inverters Through Chip-Level Modeling and Experimental Validation

open access: yesEnergies
Monitoring the peak junction hotspot temperature in IGBT modules is critical for ensuring the reliability of high-power industrial multilevel inverters, particularly when operating under extreme thermal conditions, such as in traction applications.
Ahmed H. Okilly   +4 more
doaj   +1 more source

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