Results 71 to 80 of about 657,295 (208)

Application of Silver Sintering Technology in Press-pack IGBTs

机车电传动, 2021
Silver sintering technology which has the characteristics of low temperature connection, low thermal resistance, low stress and high melting point, has gradually become the application trend of interface reliability-connection in insulated gate bipolar ...
Tingchang SHI, Han LI, Guiqin CHANG, Haihui LUO, Guozhong DONG, Guoyou LIU   +5 more
doaj  

600V-30A 4H-SiC JBS and Si IGBT Hybrid Module

, 2011
600V-30A 4H-SiC Junction Barrier Schottky（JBS）diodes were designed and fabricated using SiC epitaxy and device technology. SiC JBS diodes were packaged in Si IGBT module，and switching measurements were done at 125°C.
Chen Chen, Zhe Yang Li, Yu Zhu Li, Yun Li, Wei Jiang Ni, Xiao Jian Chen   +5 more
core   +1 more source

Partial discharge measurement and analysis in high voltage IGBT modules under DC voltage

CSEE Journal of Power and Energy Systems, 2018
Insulation performance of high voltage IGBT modules is one of the key attributes in power system applications. However, the existing standards of IGBT devices and research on the evaluation of insulation performance of high voltage IGBT modules are ...
Pengyu Fu, Zhibin Zhao, Xiang Cui, Teng Wen, Haoyu Wang, Xuebao Li, Peng Zhang   +6 more
doaj   +1 more source

Macro-Mesoscale Modeling of the Evolution of the Surface Roughness of the Al Metallization Layer of an IGBT Module during Power Cycling. [PDF]

Materials (Basel), 2023
An T, Zheng X, Qin F, Dai Y, Gong Y, Chen P.   +5 more
europepmc   +1 more source

Development of 6 500 V/200 A High-voltage and High-power Localization IGBT

机车电传动, 2017
It designed and packed localization IGBT and FRD chip of CRRC. Structural optimization of IGBT was designed through ANSYS simulations of electromagnetic field, heat, stress and so on.
CHEN Hong, YANG Chunyu, LIU Geli, WU Caisheng, CAO Lin, SUN Jun   +5 more
doaj  

Electro-thermal modeling of high power IGBT module short-circuits with experimental validation [PDF]

, 2015
A novel Insulated Gate Bipolar Transistor (IGBT) electro-thermal modeling approach involving PSpice and ANSYS/Icepak with both high accuracy and simulation speed has been presented to study short-circuit of a 1.7 kV/1 kA commercial IGBT module.
Francesco Iannuzzo, Huai Wang, Wu, Rui, Rui Wu, Blaabjerg, Frede; id_orcid, Iannuzzo, Francesco; id_orcid, Frede Blaabjerg, Wang, Huai, Iannuzzo, Francesco   +8 more
core   +1 more source

Measurement Method of IGBT Thermal Resistance Based on Structure Function

Kongzhi Yu Xinxi Jishu, 2015
Based on the structure function theory, it studied the thermal characteristics between the same IGBT case and the different baseplate interfaces, and found separation point of structure functions, by which thermal resistance between the internal PN ...
FENG Qin, LI Shiping, CHEN Yan, WAN Chaoqun, LI Yi   +4 more
doaj  

Power-cycling degradation monitoring of an IGBT module with VCE(sat) measurement in continuous operation of a chopper circuit

Power Electronic Devices and Components
This paper presents a power-cycling degradation monitoring method of an IGBT module with a VCE(sat) sensing circuit and junction temperature prediction by a three-dimensional structure model.
Kazunori Hasegawa, Kanta Hara, Nobuyuki Shishido, Satoshi Nakano, Wataru Saito, Tamotsu Ninomiya   +5 more
doaj   +1 more source

Real‐time reliability evaluation method for IGBT module in MMC based on junction temperature and bond wire failure online monitoring

IET Power Electronics
The lack of an MMC reliability evaluation approach that incorporates data on essential components' health monitoring in the already related research prevents reliability from being further improved.
Zhonghao Dongye, Wuyu Zhang, Lei Qi, Bowen Gu, Hong Shen, Xiangyu Zhang, Xiang Cui   +6 more
doaj   +1 more source

A High-performance Double Side Cooled IGBT Module for EV/HEV Applications

, 2021
High performance, low cost and high reliability integrated power modules for electric vehicle applications are leading the innovation in power electronic technology.
Jun YU, Jianfeng LI, Yaqing MA, Yuekang DU   +3 more
core   +1 more source