Results 91 to 100 of about 2,619 (224)
Reliability Evaluation of High Power Semiconductors
Kongzhi Yu Xinxi Jishu, 2015 It described the modern reliability engineering based on math and physics. The reliability problems of power semiconductor devices were introduced. Three major acceleration tests were described by means of 4045 IGCT device and related failure rate curves
ZHANG Ming
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Разработка и исследование характеристик объединенного регулятора потоков мощности [PDF]
, 2016 Объектом исследования является объединенный регулятор потоков мощности, а именно разработка системы управления и исследование его характеристик. Цель работы – понять принцип работы ОРПМ и его составляющих, разработать систему управления и исследовать его
Литвинов, Сергей Андреевич
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Architecture, Voltage and Components for a Turboelectric Distributed Propulsion Electric Grid [PDF]
, 2015 The development of a wholly superconducting turboelectric distributed propulsion system presents hide unique opportunities for the aerospace industry.
Armstrong, Michael J. +6 more
core +1 more source
Development of 20 MVA Three-level IGCT Converter
Kongzhi Yu Xinxi Jishu, 2015 It introduced a high-performance three-level IGCT converter and described the structure layout, circuit topology, control system framework, cooling system etc in detail.
HU Jiaxi +3 more
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BMC PsychologyThe neural mechanisms through which depressive mood modulates we – prioritization in complex social contexts remain unclear. This study employed event – related potentials (ERPs) to investigate how depressive mood influences we – prioritization, the ...
Wanxia Chen +7 more
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A time-varying markov-switching model for economic growth [PDF]
This paper investigates economic growth’s pattern of variation across and within countries usinga Time-Varying Transition Matrix Markov-Switching Approach.
Morier, Bruno, Teles, Vladimir Kuhl
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Research on the Isolation Technology for Reverse Conducting IGCT
Kongzhi Yu Xinxi Jishu, 2015 Isolation between GCT and FRD is the key technology in reverse conducting IGCT (RC_IGCT) developing. Compared with the existing isolation technology, a new method with compensated PNP isolation structure was proposed. Based on Silvaco simulation, process
CHEN Fanglin +5 more
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Gaoya dianqi箝位电路损耗计算是IGCT-MMC换流阀电气设计、运行损耗评估，以及阀冷却系统设计的基础。在分析IGCT-MMC子模块箝位电路工作原理的基础上，基于IGCT关断电流及二极管反向恢复电流的指数函数模型，建立了子模块换流暂态过程箝位电路的等效模型，提出了子模块箝位电路损耗的解析计算方法。对比试验测量和理论计算结果，验证了所提出损耗计算方法的有效性。
娄彦涛, 刘琦, 徐海博, 季一鸣
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Advances in genetic abnormalities, epigenetic reprogramming, and immune landscape of intracranial germ cell tumors. [PDF]
Acta Neuropathol Commun, 2023 Zhang Y +8 more
europepmc +1 more source
Physikalische Modellbildung von IGCTs für die Schaltungssimulation [PDF]
, 2007 Die vorliegende Arbeit befaßt sich mit einem Modell für den Integrated Gate Commutated Transistor (IGCT), das zur rechnergestützten Schaltungssimulation verwendet werden kann. Dabei steht das dynamischer Verhalten dieses Leistungsschalters im Vordergrund. Aufgrund bestimmter physikalischer Eigenschaften bipolarer Leistungshalbleiterbauelemente kann auf
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