Results 171 to 180 of about 2,619 (224)

10 kV IGCTs

IEEE Industry Applications Magazine, 2005
This article describes the requirements, semiconductor design, and the characteristics of the first 10-kV integrated gate commutated thyristors (IGCT) for 6- to 7.2 kV, three-level NPC voltage source converters. It is shown that the use of 10-kV IGCTs enables the reduction of the total number of the main power components and also the reliability of the
S. Bernet, E. Carroll, P. Streit, O. Apeldoorn, P. Steimer, S. Tschirley   +5 more
openaire   +1 more source

Study on the current oscillation between IGCT and anti-paralleled FRD in IGCT-MMC half-bridge

2020 4th International Conference on HVDC (HVDC), 2020
In recent years, with the rapid development of renewable energies and their connection demand with AC grids, modular multilevel converter technology (MMC) has been studied a lot. And the integrated gate-commutated thyristor (IGCT) has great potential in MMC application because of low loss, low cost and high reliability.
Yantao Lou, Wenpeng Zhou, Xiaoping Sun, Qi Liu, Biao Zhao, Zhanqing Yu, Rong Zeng   +6 more
openaire   +1 more source

Innovation IGCT main drives

Conference Record of the 1999 IEEE Industry Applications Conference. Thirty-Forth IAS Annual Meeting (Cat. No.99CH36370), 2003
The paper introduces the new IGCT drives which feature three-level NPC full regenerative power converters-the initial 3300 V product is rated up to 10 MVA. The drives utilize IGCT devices-new hard driven GTOs achieving unprecedented switching performance and effective PWM carrier frequencies up to 1 kHz.
J.P. Lyons, V. Vlatkovic, P.M. Espelage, F.H. Boettner, E. Larsen   +4 more
openaire   +1 more source

Temperature effects on IGCT performance

38th IAS Annual Meeting on Conference Record of the Industry Applications Conference, 2003., 2004
The integrated gate-commutated thyristor (IGCT) is an advanced semiconductor device for high frequency, high power applications. This work presents a detailed discussion of experimental dynamic characteristics of IGCTs at ambient temperatures ranging from -40/spl deg/C to 50/spl deg/C.
X. Wang, A. Caiafa, J. Hudgins, E. Santi
openaire   +1 more source

Application of IGCT in High Power Rectifiers

2008 IEEE Industry Applications Society Annual Meeting, 2008
This paper investigates the possibility of applying IGCT (Integrated Gate Commutated Thyristor) into high current high power rectifier systems. The optimal power converter topology that fully utilizes the functionality of IGCT is proposed. The proposed power converter consists of a front-end diode rectifier and 3-level step-down DC/DC converter.
null Yongsug Suh, P.K. Steimer
openaire   +1 more source

Very High Power IGCT PEBB technology

2005 IEEE 36th Power Electronics Specialists Conference, 2005
In the field of power electronics the power electronics building block (PEBB) is a key functional component. With regard to the applications, it is of outmost importance that the PEBB technology used is compact, cost-effective and reliable. The IGCT is at the forefront of technology in high power, medium-voltage applications. For further improvement in
P.K. Steimer, B. Odegard, O. Apeldoorn, S. Bernet, T. Bruckner   +4 more
openaire   +1 more source

Recent developments in IGCT gate units

2007 European Conference on Power Electronics and Applications, 2007
Recent improvements in GCT silicon design have allowed increased turn-off capabilities for IGCTs thus placing greater demands on the gate-unit. This paper shows how the design challenges arising from this new turn-off capability have been addressed to re-establish "a balance" between the semiconductor and the gate unit for optimal IGCT performance.
Bjorn Backlund, Matthias Luescher
openaire   +1 more source

IGCT devices-applications and future opportunities

2000 Power Engineering Society Summer Meeting (Cat. No.00CH37134), 2002
Within 5 years of its introduction, the integrated gate-commutated thyristor (IGCT) has established itself as the power device of choice at MV levels by offering the lowest costs, the highest reliability and efficiency and the highest power densities. With only 4 or 5 standard housing sizes, it covers a power range of 0.3 to 300 MW.
P. Steimer, O. Apeldoorn, E. Carroll
openaire   +1 more source

IGCT technology baseline and future opportunities

2001 IEEE/PES Transmission and Distribution Conference and Exposition. Developing New Perspectives (Cat. No.01CH37294), 2002
Commercially introduced in 1997, the IGCT has rapidly progressed into the main areas of high power electronics, namely: industrial drives, traction and energy management. Its simultaneous expansion towards higher and lower powers in such a short period of time was made possible by drawing on technologies derived from years of work on both GTOs and ...
P. Steimer, O. Apeldoorn, E. Carroll, A. Nagel   +3 more
openaire   +1 more source

Study of RC-snubber for series IGCTs

Proceedings. International Conference on Power System Technology, 2003
A new power semiconductor device, integrated gate commutated thyristor (IGCT), is used in three-level high power and medium voltage inverters. It is claimed that the turn-off snubbers for IGCTs are not necessary. However, for series connected IGCTs, a simple snubber is usually needed.
null Lu Jiming, null Wang Dan, null Mao Chengxiong, null Fan Shu   +3 more
openaire   +1 more source