Results 181 to 190 of about 2,619 (224)

On the Potential of IGCTs in HVDC

IEEE Journal of Emerging and Selected Topics in Power Electronics, 2015
In today’s voltage source converter HVDC solutions, insulated-gate bipolar transistors (IGBTs) are used exclusively, generally in module form where the modular multilevel converter is concerned; this entails a number of protective measures that increase complexity and cost.
Ladoux, Philippe, Serbia, Nicola, Carroll, E. L.   +2 more
openaire   +2 more sources

Characterization of IGCTs for series connected operation

Conference Record of the 2000 IEEE Industry Applications Conference. Thirty-Fifth IAS Annual Meeting and World Conference on Industrial Applications of Electrical Energy (Cat. No.00CH37129), 2002
This paper describes the series connection of integrated gate commutated thyristors (IGCTs) using RC-snubbers. An experimental setup with a power rating of 6 kV, 4 kA is used to analyze the dynamic and static behavior of the series connected IGCTs in detail. The mechanism of thermal stabilization of series connected IGCTs is discussed. It is shown that
A. Nagel, S. Bernet, T. Bruckner, P.K. Steimer, O. Apeldoorn   +4 more
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Design, test and characteristics of 10 kV IGCTs

38th IAS Annual Meeting on Conference Record of the Industry Applications Conference, 2003., 2004
This paper describes the design, experimental investigations and the characteristics of 10 kV IGCTs for 6 kV-7.2 kV applications. Compared to a series connection of two or three IGCTs and inverse diodes in a three level neutral point clamped voltage source converter 10 kV IGCTs and diodes offer several attractive characteristics such as drastically ...
S. Bernet, E. Carroll, P. Streit, O. Apeldoorn, P. Steimer, S. Tschirley   +5 more
openaire   +1 more source

Counter-current injection-assisted IGCT turn-off testing

2017 IEEE 12th International Conference on Power Electronics and Drive Systems (PEDS), 2017
The scope of this article is a detailed description of dimensioning a prototype for counter-current injection assisted IGCT turn-off. Limited current interruption capabilities of state-of-the-art IGCTs motivate outer pulse circuits for reduction of currents to values within the given turn-off specifications and thereby overall breaking power ...
Sander, Rene, Gmeiner, Daniel, Suriyah, Michael, Leibfried, Thomas   +3 more
openaire   +2 more sources

Investigation on 30MVA IGCT-based high power converter

Proceedings of The 7th International Power Electronics and Motion Control Conference, 2012
Nowadays the medium and high voltage high power voltage source AC-DC-AC converters are widely used in various industrial fields. The integrated gate commutated thyristor (IGCT) is applied in these converters on a large scale due to its high rated voltage and current and other excellent characteristics.
null Lan Zhiming, null Li Yaohua, null Li CHongjian, null Wang Chengsheng, null Duan Wei   +4 more
openaire   +1 more source

The IGCT test platform for voltage source inverters

The Fifth International Conference on Power Electronics and Drive Systems, 2003. PEDS 2003., 2004
This paper presents the design, simulation and implementation of circuit for IGCT (integrated gate commutated thyristor) test platform, which is an equivalent circuit for the common commutation types occurring in the 2-or 3-level VSI (voltage source inverter) circuits.
null Yuan Liqiang, null Zhao Zhengming, null Bai Hua, null Li Chongjian, null Li Yaohua   +4 more
openaire   +1 more source

Solid state on-off switches using IGCT technology

2007 16th IEEE International Pulsed Power Conference, 2007
This presentation is about semiconductor devices used for On-Off pulse switching applications and used in a 12 kVdc / 3.2kA / 10 Hz solid state switch assembly. The switch assembly is built-up with IGCT (Integrated Gate Controlled Thyristors) and used for long pulse (1.7 ms) Klystron modulators.
A. Welleman, W. Fleischmann, W. Kaesler
openaire   +1 more source

IGCTs: High-Power Technology for power electronics applications

2009 International Semiconductor Conference, 2009
This paper focuses on the most recent technical developments in Integrated Gate Commutated Thyristors. Improved Safe Operating Area (SOA) of a new IGCT chip set based on ABB's High Power Technology (HPT) platform with a rated voltage of 10kV is presented. A matching 10kV freewheeling diode is also reported. Combined, these developments open the door to
I. Nistor, T. Wikstrom, M. Scheinert
openaire   +1 more source

Converters based on IGCTs in light traction drives

IEEE 2002 28th Annual Conference of the Industrial Electronics Society. IECON 02, 2003
So far, the integrated gate-commutated thyristor (IGCT) has always been considered as a device suitable for converters controlling the power of the order of megawatts or higher. This paper shows how the advantages of the device can be used in a DC chopper and in an inverter designed to feed the traction motors of a trolleybus.
S. Bartos, V. Jehlika, J. Skramlik, V. Valouch, T. Vecerka, J. Bures, K. Kalcik, E. Venhoda   +7 more
openaire   +1 more source

Investigation of topologies for IGCT three-level inverter

2008 IEEE International Conference on Industrial Technology, 2008
The integrated gate-commutated thyristor (IGCT) is a new device with low inductance and integrated gate-driver which is widely used in high power inverter. This paper presents the principle of IGCT clamping snubber, investigates several topologies with different turn-on clamping snubber for NPC three-level IGCT inverter and compares inverter topology ...
Qiongxuan Ge, Yaohua Li, Li Kong
openaire   +1 more source