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Characterization of Gate Controlled Diodes for IGCT Applications
2009The scope of the research work is to characterize and evaluate prototypes of a newly devloped device called 'Gate Controlled Diode' (GCD), manufactured and preliminary tested by ABB, Semiconductor for steady state operating conditions-forward conducting and reverse blocking mode and transient operation-turn-off mode.
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Deciphering the Effect of Corrugated p-Base on Reverse Blocking IGCT
IEEE Transactions on Electron Devices, 2022Chunpin Ren, Jiapeng Liu, Jinpeng Wu
exaly
IEEE Journal of Emerging and Selected Topics in Power Electronics, 2019
Biao Zhao, Rong Zeng, Tianyu Wei
exaly
Biao Zhao, Rong Zeng, Tianyu Wei
exaly
Reverse blocking IGCT optimised for 1 kV DC bi‐directional solid state circuit breaker
IET Power Electronics, 2015Munaf Rahimo
exaly
Electromagnetic Emissions from IGCT - Based Chopper for Trolleybus
International Symposium on Electromagnetic Compatibility, 1992Stanislav Bartoš +4 more
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