Results 161 to 170 of about 77,310 (302)

Machine‐Learning‐Enhanced Printed Vertical Magnetoresistive Sensors for Transparent, Flexible, Multimodal Interactive Magnetoelectronics

open access: yesAdvanced Science, EarlyView.
This study presents printed magnetoresistive sensors with a vertically aligned architecture that enables high optical transparency and mechanical flexibility. By integrating deep learning for the analysis of complex spatiotemporal signal patterns, the system further achieves intelligent multimodal interaction capabilities.
Rui Xu   +11 more
wiley   +1 more source

Sub-10-nm imprint lithography on elastomers by chain translocated crystallization in nanochannels. [PDF]

open access: yesSci Adv
Yang Y   +9 more
europepmc   +1 more source

Influence of Bottom Electrodes on the Ferroelectric Stability of AlScN Film at High Temperatures

open access: yesAdvanced Electronic Materials, EarlyView.
The thermal stability of AlScN depends on the bottom electrode. When the bottom electrode possesses compressive stress, tensile strain develops in the AlScN upon thermal annealing, reducing the switching barrier. When the bottom electrode forms a coherent interface with AlScN, significant tensile strain and defects are generated in the AlScN layer ...
Kyung Do Kim   +4 more
wiley   +1 more source

Male Tuberous Breast: A Rare Variant of Gynecomastia. [PDF]

open access: yesCureus
Ankiz A   +3 more
europepmc   +1 more source

Temperature‐Graded Deposition of HfZrOx for Ferroelectric Capacitors With Enhanced Polarization, Reliability, and Switching

open access: yesAdvanced Electronic Materials, EarlyView.
Temperature‐graded ALD of HfZrOx (HZO) enables strain‐enhanced stabilization of the ferroelectric o‐phase, achieving simultaneously high polarization, fast switching, and robust endurance in BEOL‐compatible FeCAPs. ABSTRACT Ferroelectric Hf0.5Zr0.5O2 (HZO) capacitors hold great promise for next‐generation nonvolatile memory and logic applications ...
Sheng‐Yen Zheng   +5 more
wiley   +1 more source

Silicon Nitride Resistive Memories

open access: yesAdvanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis   +7 more
wiley   +1 more source

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