Results 211 to 220 of about 1,025,950 (315)

IMPACT: In-Memory ComPuting Architecture based on Y-FlAsh Technology for Coalesced Tsetlin machine inference. [PDF]

Philos Trans A Math Phys Eng Sci
Ghazal O, Wang W, Kvatinsky S, Merchant F, Yakovlev A, Shafik R.   +5 more
europepmc   +1 more source

Deep learning incorporating biologically inspired neural dynamics and in-memory computing

Nature Machine Intelligence, 2020
Stanisław Woźniak, A. Pantazi, T. Bohnstingl, E. Eleftheriou   +3 more
semanticscholar   +1 more source

Bimetallic Nanoreactor Activates cGAS‐STING Pathway via mtDNA Release for Cancer Metalloimmunotherapy

Advanced Functional Materials, EarlyView.
A bimetallic Mn–Ca nanoreactor (MCC) is developed as a non‐nucleotide STING nanoagonist for cancer metalloimmunotherapy. MCC induces Ca2+ overload and hydroxyl radical generation, resulting in mitochondrial damage and mtDNA release. The released mtDNA cooperates with Mn2+ to robustly activate cGAS–STING signaling.
Xin Wang Mo, Nguyen Thi Nguyen, LiLi Guo, Ngoc Man Phan, Hyunsu Shin, Tae‐il Kim, Yu Seok Youn, Jaeyun Kim   +7 more
wiley   +1 more source

Cryo-SIMPLY: A Reliable STT-MRAM-Based Smart Material Implication Architecture for In-Memory Computing. [PDF]

Nanomaterials (Basel)
Moposita T, Garzón E, Teman A, Lanuzza M.   +3 more
europepmc   +1 more source

Electroactive Liquid Crystal Elastomers as Soft Actuators

Advanced Functional Materials, EarlyView.
Electroactive liquid crystal elastomers (eLCEs) can be actuated via electromechanical, electrochemical, or electrothermal effects. a) Electromechanical effects include Maxwell stress, electrostriction, and the electroclinic effect. b) Electrochemical effects arise from electrode redox reactions.
Yakui Deng, Min‐Hui Li
wiley   +1 more source

Charge-trap synaptic device with polycrystalline silicon channel for low power in-memory computing. [PDF]

Sci Rep
Park MK, Hwang J, Kim S, Shin W, Shim W, Bae JH, Lee JH, Cho S.   +7 more
europepmc   +1 more source

Domain‐Wall‐Free Sliding Ferroelectricity in Fully Commensurate 3R Transition Metal Dichalcogenide Bilayers

Advanced Functional Materials, EarlyView.
It is reported that the ferroelectric switching behavior of rhombohedral (3R) phase transition metal dichalcogenide (TMD) bilayers strongly depends on their domain structures. Single‐domain TMDs (SD‐TMDs) with domain‐wall‐free structures exhibit robust and stable polarization switching, whereas poly‐domain TMDs (PD‐TMDs) with randomly distributed ...
Ji‐Hwan Baek, Seong Chul Hong, Jinwoo Kim, Hyeongseok Lee, Hyun Woo Jeong, Kenji Watanabe, Takashi Taniguchi, Min Hyuk Park, Gwan‐Hyoung Lee   +8 more
wiley   +1 more source

Adapting magnetoresistive memory devices for accurate and on-chip-training-free in-memory computing. [PDF]

Sci Adv
Xiao Z, Naik VB, Lim JH, Hou Y, Wang Z, Shao Q.   +5 more
europepmc   +1 more source

Universal Neuromorphic Element: NbOx Memristor with Co‐Existing Volatile, Non‐Volatile, and Threshold Switching

Advanced Functional Materials, EarlyView.
A W/NbOx/Pt memristor demonstrates the coexistence of volatile, non‐volatile, and threshold switching characteristics. Volatile switching serves as a reservoir computing layer, providing dynamic short‐term processing. Non‐volatile switching, stabilized through ISPVA, improves reliable long‐term readout. Threshold switching operates as a leaky integrate
Ungbin Byun, Hyesung Na, Sungjun Kim
wiley   +1 more source

Ferroelectric capacitors and field-effect transistors as in-memory computing elements for machine learning workloads. [PDF]

Sci Rep
Yu E, K GK, Saxena U, Roy K.
europepmc   +1 more source