Results 1 to 10 of about 1,646,245 (299)

Steady states of holographic interfaces [PDF]

open access: yesJournal of High Energy Physics, 2021
Abstract We find stationary thin-brane geometries that are dual to far-from-equilibrium steady states of two-dimensional holographic interfaces. The flow of heat at the boundary agrees with the result of CFT and the known energy-transport coefficients of the thin-brane model.
Bachas, Constantin   +2 more
openaire   +5 more sources

Engineering collagenous analogs of connective tissue extracellular matrix

open access: yesFrontiers in Bioengineering and Biotechnology, 2022
Connective tissue extracellular matrix (ECM) consists of an interwoven network of contiguous collagen fibers that regulate cell activity, direct biological function, and guide tissue homeostasis throughout life.
Philip A. P. Brudnicki   +4 more
doaj   +1 more source

Preliminary psychometric properties of a standard vocabulary test administered using a non-invasive brain-computer interface

open access: yesFrontiers in Human Neuroscience, 2022
ObjectiveTo examine measurement agreement between a vocabulary test that is administered in the standardized manner and a version that is administered with a brain-computer interface (BCI).MethodThe sample was comprised of 21 participants, ages 9–27 ...
Seth Warschausky   +9 more
doaj   +1 more source

Characterization of the Stages of Creative Writing With Mobile EEG Using Generalized Partial Directed Coherence

open access: yesFrontiers in Human Neuroscience, 2020
Two stages of the creative writing process were characterized through mobile scalp electroencephalography (EEG) in a 16-week creative writing workshop. Portable dry EEG systems (four channels: TP09, AF07, AF08, TP10) with synchronized head acceleration ...
Jesus G. Cruz-Garza   +5 more
doaj   +1 more source

Phenomenological Model of Gate-Dependent Kink in I-V Characteristics of MoS2 Double-Gate FETs

open access: yesIEEE Journal of the Electron Devices Society, 2021
A phenomenological model, accounting for interface states at metal-semiconductor contacts, is proposed to explain particular gate-bias-dependent kinking in I-V characteristics sometimes observed in MoS2 FETs.
Michael A. Rodder, Ananth Dodabalapur
doaj   +1 more source

Revisiting the effects of Co(2)O(3) on multiscale defect structures and relevant electrical properties in ZnO varistors

open access: yesHigh Voltage, 2020
Element doping is an effective method to improve the performance of ZnO varistors. Previous studies mainly focused on the variation of microstructures and Schottky barriers.
Men Guo   +7 more
doaj   +1 more source

Power loss transition of stable ZnO varistor ceramics: Role of oxygen adsorption on the stability of interface states at the grain boundary

open access: yesJournal of Advanced Ceramics, 2023
Highly stable ZnO varistor ceramics with steadily decreasing power loss have been put into applications in electrical and electronic systems for overvoltage protections, even with the absence of general understandings on their aging behaviors.
Zhuolin Cheng   +5 more
doaj   +1 more source

Psychophysical Studies of Interleaving Narrowband Tactile Stimuli to Achieve Broadband Perceptual Effects

open access: yesFrontiers in Virtual Reality, 2022
Despite the ubiquitous presence of tactile actuators (tactors) in mobile devices, there is a continuing need for more advanced tactors that can cover the entire frequency range of human tactile perception.
Juan S. Martinez   +2 more
doaj   +1 more source

Edge State Dynamics Along Curved Interfaces

open access: yesSIAM Journal on Mathematical Analysis, 2023
31 pages, 8 ...
Guillaume Bal   +5 more
openaire   +4 more sources

Effective suppression of interface states in recessed-gate MIS-HEMTs by TMAH wet etching

open access: yesApplied Physics Express, 2023
The effect of tetramethylammonium hydroxide (TMAH) treatment prior to gate dielectric deposition on the performance of recessed-gate AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) was investigated.
Yu Li   +11 more
doaj   +1 more source

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